Abstract:
A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.
Abstract:
A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.
Abstract:
A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.
Abstract:
A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.
Abstract:
A power module package is provided. The power module package includes a power circuit element, a control circuit element, a lead frame, a heat sink, and an epoxy molding compound (EMC). The control circuit element is connected to the power circuit and controls chips in the power circuit. The lead frame has external connecting means formed at the edges thereof, and a down set part, namely, formed between the external connecting means. The lead frame has a first surface to which the power circuit and the control circuit are attached, and a second surface used as a heat dissipating path, in particular, the power circuit is attached to the down set part. The heat sink which is closely attached to the down set part of the second surface of the lead frame by an adhesive. The EMC surrounds the power circuit, the control circuit, the lead frame and the heat sink, and exposes the external connecting means of the lead frame and a side of the heat sink.
Abstract:
A power module package is provided. The power module package includes a power circuit element, a control circuit element, a lead frame, a heat sink, and an epoxy molding compound (EMC). The control circuit element is connected to the power circuit and controls chips in the power circuit. The lead frame has external connecting means formed at the edges thereof, and a down set part, namely, formed between the external connecting means. The lead frame has a first surface to which the power circuit and the control circuit are attached, and a second surface used as a heat dissipating path, in particular, the power circuit is attached to the down set part. The heat sink which is closely attached to the down set part of the second surface of the lead frame by an adhesive. The EMC surrounds the power circuit, the control circuit, the lead frame and the heat sink, and exposes the external connecting means of the lead frame and a side of the heat sink.
Abstract:
A power module package is provided. The power module package includes a power circuit element, a control circuit element, a lead frame, a heat sink, and an epoxy molding compound (EMC). The control circuit element is connected to the power circuit and controls chips in the power circuit. The lead frame has external connecting means formed at the edges thereof, and a down set part, namely, formed between the external connecting means. The lead frame has a first surface to which the power circuit and the control circuit are attached, and a second surface used as a heat dissipating path, in particular, the power circuit is attached to the down set part. The heat sink which is closely attached to the down set part of the second surface of the lead frame by an adhesive. The EMC surrounds the power circuit, the control circuit, the lead frame and the heat sink, and exposes the external connecting means of the lead frame and a side of the heat sink.
Abstract:
Provided are power device packages, which include thermal electric modules using the Peltier effect and thus can improve operational reliability by rapidly dissipating heat generated during operation to the outside, and methods of fabricating the same. An exemplary power device package includes: a thermal electric module having a first surface and a second surface opposite each other, and a plurality of n-type impurity elements and a plurality of p-type impurity elements alternately and electrically connected to each other in series; a lead frame attached to the first surface of the thermal electric module by an adhesive member; at least one power semiconductor chip and at least one control semiconductor chip, each chip being mounted on and electrically connected to the lead frame; and a sealing member sealing the thermal electric module, the chips, and at least a portion of the lead frame, but exposing the second surface of the module.
Abstract:
Provided are power device packages, which include thermal electric modules using the Peltier effect and thus can improve operational reliability by rapidly dissipating heat generated during operation to the outside, and methods of fabricating the same. An exemplary power device package includes: a thermal electric module having a first surface and a second surface opposite each other, and a plurality of n-type impurity elements and a plurality of p-type impurity elements alternately and electrically connected to each other in series; a lead frame attached to the first surface of the thermal electric module by an adhesive member; at least one power semiconductor chip and at least one control semiconductor chip, each chip being mounted on and electrically connected to the lead frame; and a sealing member sealing the thermal electric module, the chips, and at least a portion of the lead frame, but exposing the second surface of the module.
Abstract:
Provided are power device packages, which include thermal electric modules using the Peltier effect and thus can improve operational reliability by rapidly dissipating heat generated during operation to the outside, and methods of fabricating the same. An exemplary power device package includes: a thermal electric module having a first surface and a second surface opposite each other, and a plurality of n-type impurity elements and a plurality of p-type impurity elements alternately and electrically connected to each other in series; a lead frame attached to the first surface of the thermal electric module by an adhesive member; at least one power semiconductor chip and at least one control semiconductor chip, each chip being mounted on and electrically connected to the lead frame; and a sealing member sealing the thermal electric module, the chips, and at least a portion of the lead frame, but exposing the second surface of the module.