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公开(公告)号：US20120051384A1
公开(公告)日：2012-03-01
申请号：US12868591
申请日：2010-08-25
CPC分类号： H01S5/18305 , H01L2224/24137 , H01L2224/25 , H01L2224/33 , H01L2224/73267 , H01L2224/82005 , H01L2224/92244 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/18311 , H01S5/18369 , H01S5/4018 , H01S5/423
摘要： Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.
摘要翻译： 公开了具有用于电连接的通孔的垂直腔表面发射激光（VCSEL）阵列。 根据本发明的一个或多个实施例的垂直腔表面发射激光器（VCSEL）阵列包括多个第一反射镜，多个第二反射镜，多个有源区域，耦合在多个第一反射镜和多个第一反射镜之间 的第二反射镜，以及散热器，其热和机械地耦合到与所述多个有源区域相对的所述第二反射镜，其中通过所述多个第二反射镜的深度形成的通过所述多个第二反射镜中的至少一个的电通路 第二反射镜和VCSEL阵列中的多个VCSEL串联连接。
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公开(公告)号：US08654811B2
公开(公告)日：2014-02-18
申请号：US12868591
申请日：2010-08-25
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , H01L2224/24137 , H01L2224/25 , H01L2224/33 , H01L2224/73267 , H01L2224/82005 , H01L2224/92244 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/18311 , H01S5/18369 , H01S5/4018 , H01S5/423
摘要： Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.
摘要翻译： 公开了具有用于电连接的通孔的垂直腔表面发射激光（VCSEL）阵列。 根据本发明的一个或多个实施例的垂直腔表面发射激光器（VCSEL）阵列包括多个第一反射镜，多个第二反射镜，多个有源区域，耦合在多个第一反射镜和多个第一反射镜之间 的第二反射镜，以及散热器，其热和机械地耦合到与所述多个有源区域相对的所述第二反射镜，其中通过所述多个第二反射镜的深度形成的通过所述多个第二反射镜中的至少一个的电通路 第二反射镜和VCSEL阵列中的多个VCSEL串联连接。
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公开(公告)号：US20100096665A1
公开(公告)日：2010-04-22
申请号：US12254634
申请日：2008-10-20
IPC分类号： H01L31/0304
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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公开(公告)号：US07915639B2
公开(公告)日：2011-03-29
申请号：US12254634
申请日：2008-10-20
IPC分类号： H01L31/102
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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公开(公告)号：US08581168B2
公开(公告)日：2013-11-12
申请号：US13074290
申请日：2011-03-29
CPC分类号： H04N5/33 , F41G7/008 , F41G7/2253 , F41G7/226 , F41G7/2293 , H04N5/2256
摘要： A single camera capable of capturing high speed laser return pulses for a target, as well as provide imaging information on the background of the target. This capability is enabled by having a read-out integrated circuit (ROIC) capable of extracting both types of information from a pixel of a focal plane array (FPA). Further, an ROIC topology that allows for the ability to distinguish between high frequency and low frequency signal paths, and provide supporting circuitry to process the two paths separately. One path may integrate the low frequency background scene to provide a high fidelity image of the scene. The second path may process high frequency noise and multiple laser pulse returns within a frame. These two paths may be combined to provide a background image with a superimposed laser return.
摘要翻译： 一个能够捕获目标的高速激光返回脉冲的单个相机，以及在目标的背景上提供成像信息。 通过具有能够从焦平面阵列（FPA）的像素中提取两种类型的信息的读出集成电路（ROIC）来实现该能力。 此外，ROIC拓扑允许区分高频和低频信号路径的能力，并提供支持电路来分别处理两个路径。 一个路径可以集成低频背景场景以提供场景的高保真图像。 第二路径可以处理高频噪声并且在一帧内处理多个激光脉冲返回。 这两个路径可以组合以提供具有叠加的激光返回的背景图像。
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公开(公告)号：US08324659B2
公开(公告)日：2012-12-04
申请号：US13070829
申请日：2011-03-24
IPC分类号： H01L31/102
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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公开(公告)号：US20120248288A1
公开(公告)日：2012-10-04
申请号：US13074290
申请日：2011-03-29
CPC分类号： H04N5/33 , F41G7/008 , F41G7/2253 , F41G7/226 , F41G7/2293 , H04N5/2256
摘要： Embodiments of the invention describe solutions directed towards having a single camera capable of capturing high speed laser return pulses for a target, as well as provide imaging information on the background of the target. This capability is enabled by having a read-out integrated circuit (ROIC) capable of extracting both types of information from a pixel of a focal plane array (FPA).Embodiments of the invention describe an ROIC topology that allows for the ability to distinguish between high frequency and low frequency signal paths, and provide supporting circuitry to process the two paths separately. One path may integrate the low frequency background scene to provide a high fidelity image of the scene. The second path may process high frequency noise and multiple laser pulse returns within a frame. These two paths may be combined to provide a background image with a superimposed laser return.
摘要翻译： 本发明的实施例描述了针对具有能够捕获目标的高速激光返回脉冲的单个相机的解决方案，以及提供目标背景上的成像信息。 通过具有能够从焦平面阵列（FPA）的像素中提取两种类型的信息的读出集成电路（ROIC）来实现该能力。 本发明的实施例描述了一种ROIC拓扑，其允许区分高频和低频信号路径的能力，并且提供支持电路来分别处理这两条路径。 一个路径可以集成低频背景场景以提供场景的高保真图像。 第二路径可以处理高频噪声并且在一帧内处理多个激光脉冲返回。 这两个路径可以组合以提供具有叠加的激光返回的背景图像。
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公开(公告)号：US20110169048A1
公开(公告)日：2011-07-14
申请号：US13070829
申请日：2011-03-24
IPC分类号： H01L31/0304
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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