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公开(公告)号：US20100096665A1
公开(公告)日：2010-04-22
申请号：US12254634
申请日：2008-10-20
IPC分类号： H01L31/0304
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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公开(公告)号：US07915639B2
公开(公告)日：2011-03-29
申请号：US12254634
申请日：2008-10-20
IPC分类号： H01L31/102
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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公开(公告)号：US08324659B2
公开(公告)日：2012-12-04
申请号：US13070829
申请日：2011-03-24
IPC分类号： H01L31/102
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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公开(公告)号：US20110169048A1
公开(公告)日：2011-07-14
申请号：US13070829
申请日：2011-03-24
IPC分类号： H01L31/0304
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/107 , Y02E10/544
摘要： Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
摘要翻译： 公开了使用晶格匹配的光吸收层制成的检测器的实施例。 根据本发明的一个或多个实施例的光电二极管装置包括磷化铟衬底和至少包含砷化铟镓锑氮化物（InGaAsSbN）层的光吸收区，其中所述InGaAsSbN层具有至少100纳米的厚度 并且名义上与磷化铟基板晶格匹配。
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公开(公告)号：US08559478B2
公开(公告)日：2013-10-15
申请号：US12355628
申请日：2009-01-16
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
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公开(公告)号：US07142744B2
公开(公告)日：2006-11-28
申请号：US11067030
申请日：2005-02-24
申请人： Tony Walter , Dan Blumenthal , John E. Bowers , Peter Hunt , Roger J. Helkey , Xuezhe Zheng
发明人： Tony Walter , Dan Blumenthal , John E. Bowers , Peter Hunt , Roger J. Helkey , Xuezhe Zheng
CPC分类号： G02B6/3588 , G02B6/266 , G02B6/3512 , G02B6/3518 , G02B6/3556 , G02B6/356 , G02B6/3594 , H04Q11/0005 , H04Q2011/0024 , H04Q2011/0026 , H04Q2011/003 , H04Q2011/0039 , H04Q2011/0049
摘要： A method for equalizing optical signal power in a group of optical signals transmitted through an optical switch in an optical transmission system. In one embodiment a group of optical signals is input into an optical switch having at least one movable mirror array with a plurality of reflectors formed thereon, the optical beam being directed onto a selected at least one reflector and wherein attenuating the optical beam is accomplished by controllably detuning at least one of the selected at least one reflector to attenuate the optical beam.
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公开(公告)号：US06323414B1
公开(公告)日：2001-11-27
申请号：US09548011
申请日：2000-04-12
申请人： Ali Shakouri , John E. Bowers
发明人： Ali Shakouri , John E. Bowers
IPC分类号： H01L3530
CPC分类号： H01L29/861 , H01L29/205 , H01L29/267
摘要： A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow “hot” electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
摘要翻译： 异质结构热离子冷却器和用于制造热离子冷却器的方法，使用放置在两层材料之间的用于n型材料的变化的导带的阻挡层或用于p型材料的变化的带状带。 阻挡层具有足够高的阻挡层，用于冷侧仅允许穿过屏障的“热”电子或足够高能量的电子。 阻挡层被构造成具有内部电场，使得使其超过初始屏障的电子被辅助到行进到阳极。 一旦电子下降到阳极的能级，它们就会失去晶格的能量，从而在阳极处加热晶格。 阻挡层的势垒高度足够高以防止电子沿相反方向传播。
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公开(公告)号：US06277696B1
公开(公告)日：2001-08-21
申请号：US08751038
申请日：1996-11-15
申请人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
发明人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
IPC分类号： H01L2120
CPC分类号： H01S5/1838 , H01S5/18305 , H01S5/18308 , H01S5/18341 , H01S5/2063
摘要： The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.
摘要翻译： 本发明提供一种在所需波长范围内具有高增益和高反射率的垂直腔表面发射激光器以及良好的导热和导热性。 激光器结构由第一反射镜区域，第二反射镜区域和位于第一和第二镜像区域之间的有源区域组成。 与先前的VCSEL不同，有源区域融合到第一镜像区域和第二镜像区域两者。 这允许激光设计者通过允许为第一镜面区域，第二镜面区域和有源区域选择不同的材料来优化所需波长范围的激光器性能。
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公开(公告)号：US06208007B1
公开(公告)日：2001-03-27
申请号：US09362538
申请日：1999-07-28
IPC分类号： H01L3100
CPC分类号： H01L31/18 , H01L29/66234 , H01L29/66242 , H01L29/66318 , H01S5/0207 , H01S5/0215 , H01S5/0217 , H01S5/18308 , H01S5/18316 , H01S5/18341 , H01S5/18369 , H01S5/1838 , H01S5/2072
摘要： Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.
摘要翻译： 掩埋层形成在半导体内。 金属或绝缘掩埋层在半导体衬底内产生几微米。 掩埋层可以通过使用导电材料来形成掩埋层而将电流限制在埋层本身。 掩埋层还可以通过在掩埋层内部使用绝缘材料或通过在材料内留下产生的空隙将电流限制在半导体的指定区域。 掩埋层在半导体垂直腔激光器（VCL）的构造中是有用的。 掩埋隔离层将电流限制在窄的有源区域，从而提高VCL的效率。 掩埋层也可用于制造分立器件，例如二极管，晶体管和光电探测器，以及制造集成电路。
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公开(公告)号：US6015980A
公开(公告)日：2000-01-18
申请号：US828372
申请日：1997-03-28
IPC分类号： H01L21/331 , H01L31/18 , H01L33/00
CPC分类号： H01L31/18 , H01L29/66234 , H01L29/66242 , H01L29/66318 , H01S5/18341 , H01S5/0207 , H01S5/0215 , H01S5/0217 , H01S5/18308 , H01S5/18316 , H01S5/18369 , H01S5/1838 , H01S5/2072
摘要： By using fusion of a heat spreader layer, a large bandwidth, high power semiconductor laser can be fabricated. The use of multiple metals with low thermal resistance allows for higher power because heat flow is conducted away from the active region easily. The extraction of heat from the active region makes the resultant laser more stable with the capability for higher power outputs.
摘要翻译： 通过使用散热器层的融合，可以制造大带宽的大功率半导体激光器。 使用具有低热阻的多种金属允许更高的功率，因为热流易于远离有源区域传导。 从有源区域提取热量使得所得到的激光器具有更高功率输出的能力。
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