公开(公告)号：US10014283B1

公开(公告)日：2018-07-03

申请号：US15782239

申请日：2017-10-12

申请人： Jing Qiao Corporation Limited

发明人： Chin-Liang Chiang ,  Neng-Huang Chu ,  Yi-Lun Wu

IPC分类号： H01L25/065 ,  H01L23/367 ,  H01L21/48 ,  H01L21/52 ,  H01L21/56 ,  H01L23/495 ,  H01L23/522 ,  H01L23/15 ,  H01L21/60 ,  H01L21/603 ,  H01L25/04 ,  H01L25/11 ,  H01L25/075

CPC分类号： H01L25/0657 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/4882 ,  H01L21/52 ,  H01L21/563 ,  H01L23/13 ,  H01L23/15 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/4952 ,  H01L23/5226 ,  H01L23/5385 ,  H01L25/043 ,  H01L25/0756 ,  H01L25/117 ,  H01L2021/60022 ,  H01L2021/60277 ,  H01L2021/603 ,  H01L2224/16225

摘要： The present invention provides a semiconductor device including a first glass substrate, a first integrated chip, a first anisotropic conductive film, a second glass substrate, a second integrated chip, a second anisotropic conductive film, and a packaging body.