公开(公告)号：US20120166450A1

公开(公告)日：2012-06-28

申请号：US13333667

申请日：2011-12-21

申请人： Ji Hoon CHOI ,  Ji Seoung KIM ,  Youn Sik LEE

发明人： Ji Hoon CHOI ,  Ji Seoung KIM ,  Youn Sik LEE

IPC分类号： G06F17/30

CPC分类号： G06F17/30439 ,  G06F17/30448

摘要： A search system includes a non-transitory computer-readable storage device, and a computing device. A term extracting unit causes the computing device to extract multiple terms from an input query, a weight computing unit causes the computing device to compute a weight for each of the multiple terms, and a reduction query recommending unit causes the computing device to remove at least one term from the multiple terms, based on the weight, and to provide at least one reduced query using remaining terms. A search method that uses a computing device to provide a reduced query, the method includes extracting multiple terms from an input query; computing, by the computing device, a weight of each of the multiple terms; and removing at least one term from the multiple terms, based on the weight, and providing at least one reduced query generated using remaining terms out of the multiple terms.

摘要翻译： 搜索系统包括非暂时性计算机可读存储设备和计算设备。 术语提取单元使得计算设备从输入查询中提取多个项，权重计算单元使计算设备计算每个多项的权重，并且减少查询推荐单元使计算设备至少移除 一个术语来自多个术语，基于权重，并且使用剩余术语提供至少一个缩减查询。 一种使用计算设备提供缩减查询的搜索方法，所述方法包括从输入查询中提取多个项; 由所述计算设备计算所述多个项中的每一个的权重; 以及基于所述权重从所述多个术语中移除至少一个术语，并且提供使用所述多个术语中的剩余术语生成的至少一个缩减查询。

公开(公告)号：US20180026046A1

公开(公告)日：2018-01-25

申请号：US15375944

申请日：2016-12-12

申请人： Phil Ouk NAM ,  Sung Gil KIM ,  Seulye KIM ,  Hong Suk KIM ,  Jae Young AHN ,  Ji Hoon CHOI

发明人： Phil Ouk NAM ,  Sung Gil KIM ,  Seulye KIM ,  Hong Suk KIM ,  Jae Young AHN ,  Ji Hoon CHOI

IPC分类号： H01L27/11582 ,  H01L29/423 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11556

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42324 ,  H01L29/4234

摘要： In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At least one of the gate electrode layers has a first portion and a second portion. The second portion forms an end portion of the at least one gate electrode layer, and a bottom surface of the second portion is at a lower level than a bottom surface of the first portion. A contact plug extends from the second portion.

公开(公告)号：US20130036774A1

公开(公告)日：2013-02-14

申请号：US13570636

申请日：2012-08-09

申请人： Hyun Mook KIM ,  Sang Hyeok LEE ,  Je Hong MIN ,  Jung Hee LEE ,  Ji Hoon CHOI ,  Kab Jin JUN

发明人： Hyun Mook KIM ,  Sang Hyeok LEE ,  Je Hong MIN ,  Jung Hee LEE ,  Ji Hoon CHOI ,  Kab Jin JUN

IPC分类号： D06F21/00

CPC分类号： D06F39/083 ,  D06F37/26

摘要： A washing machine includes a rotary tub having a diameter progressively increasing from a first end side thereof to a second end side thereof located opposite the first end side, dehydration holes arranged at the second end side of the rotary tub, and a dehydration hole switching unit to open and close the dehydration holes. The dehydration holes are opened depending on increase of a rate of rotation of the rotary tub.

摘要翻译： 一种洗衣机包括：从其第一端侧的第一端侧到第二端侧的直径逐渐增加的旋转桶，设置在旋转桶的第二端侧的脱水孔，以及脱水孔切换单元 打开和关闭脱水孔。 脱水孔根据旋转桶的旋转速度的增加而打开。

公开(公告)号：US20190013328A1

公开(公告)日：2019-01-10

申请号：US15871059

申请日：2018-01-14

申请人： Sung Gil KIM ,  Seul Ye KIM ,  Hong Suk KIM ,  Jin Tae NOH ,  Ji Hoon CHOI ,  Jae Young AHN

发明人： Sung Gil KIM ,  Seul Ye KIM ,  Hong Suk KIM ,  Jin Tae NOH ,  Ji Hoon CHOI ,  Jae Young AHN

IPC分类号： H01L27/11582 ,  H01L23/532 ,  H01L27/108 ,  H01L29/06 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L27/11582 ,  H01L23/53295 ,  H01L24/29 ,  H01L25/065 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/11565 ,  H01L29/0649

摘要： A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

公开(公告)号：US20180108672A1

公开(公告)日：2018-04-19

申请号：US15484339

申请日：2017-04-11

申请人： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

发明人： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L27/11565

CPC分类号： H01L27/11582 ,  H01L23/5283 ,  H01L27/11565

摘要： A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.