公开(公告)号：US20130233826A1

公开(公告)日：2013-09-12

申请号：US13785466

申请日：2013-03-05

Applicant: JSR CORPORATION

Inventor： Tomoaki SEKO ,  Fumihiro TOYOKAWA ,  Yuushi MATSUMURA ,  Tooru KIMURA

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和有机溶剂组合物。 有机溶剂组合物包括标准沸点小于150.0℃的亚烷基二醇单烷基醚乙酸酯和标准沸点不低于150.0℃的有机溶剂。在有机溶剂组合物中， 亚烷基二醇单烷基醚乙酸酯的含量为50质量％以上且99质量％以下，有机溶剂的含量为1质量％以上且50质量％以下。

公开(公告)号：US20130153535A1

公开(公告)日：2013-06-20

申请号：US13714406

申请日：2012-12-14

Applicant: JSR Corporation

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Kazuhiko KOUMURA ,  Yuushi MATSUMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/091 ,  H01L21/0276

Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

Abstract translation: 用于形成抗蚀剂下层膜的树脂组合物包括具有芳环的树脂和具有由下式（i）表示的部分结构的交联剂。 X表示氧原子，硫原子，* -COO-或-NRA-。 R1表示氢原子或C1-30一价烃基。 R2表示羟基，磺胺基，氰基，硝基，C1-30一价烃基，C1-30一价羟基烃基或C1-30一价硫代烃基。 p为1〜3的整数。

公开(公告)号：US20230384676A1

公开(公告)日：2023-11-30

申请号：US18135838

申请日：2023-04-18

Applicant: JSR CORPORATION

Inventor： Takuya OMIYA ,  Katsuaki NISHIKORI ,  Kazuya KIRIYAMA ,  Yuushi MATSUMURA ,  Natsuko KINOSHITA

IPC: G03F7/039 ,  C08F136/16 ,  C07C69/653

CPC classification number: G03F7/0397 ,  C08F136/16 ,  C07C69/653

Abstract: A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond or —COO-L-; L represents a substituted or unsubstituted alkanediyl group; R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; L2 represents a single bond or a divalent linking group; and Ar represents a group obtained by removing (n+1) hydrogen atoms from an aromatic ring. R3 is independently a halogen atom, a halogenated hydrocarbon group, a hydroxy group, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent alkyl ether group having 1 to 10 carbon atoms, and at least one R3 is a halogen atom or a halogenated hydrocarbon group.

公开(公告)号：US20210389671A1

公开(公告)日：2021-12-16

申请号：US17458783

申请日：2021-08-27

Applicant: JSR CORPORATION

Inventor： Tetsurou KANEKO ,  Hiromitsu NAKASHIMA ,  Yuushi MATSUMURA ,  Junya SUZUKI ,  Shuto MORI ,  Hiroyuki ISHII

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: A radiation-sensitive resin composition includes: a first polymer having a first structural unit which includes a phenolic hydroxyl group, and a second structural unit which includes an acid-labile group and a carboxy group which is protected by the acid-labile group; a second polymer having a third structural unit represented by the following formula (S-1), and a fourth structural unit which is a structural unit other than the third structural unit and is represented by the following formula (S-2); and a radiation-sensitive acid generator, wherein the acid-labile group includes a monocyclic or polycyclic ring structure having no fewer than 3 and no more than 20 ring atoms.

公开(公告)号：US20220260908A9

公开(公告)日：2022-08-18

申请号：US17458783

申请日：2021-08-27

Applicant: JSR CORPORATION

Inventor： Tetsurou KANEKO ,  Hiromitsu NAKASHIMA ,  Yuushi MATSUMURA ,  Junya SUZUKI ,  Shuto MORI ,  Hiroyuki ISHII

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: A radiation-sensitive resin composition includes: a first polymer having a first structural unit which includes a phenolic hydroxyl group, and a second structural unit which includes an acid-labile group and a carboxy group which is protected by the acid-labile group; a second polymer having a third structural unit represented by the following formula (S-1), and a fourth structural unit which is a structural unit other than the third structural unit and is represented by the following formula (S-2); and a radiation-sensitive acid generator, wherein the acid-labile group includes a monocyclic or polycyclic ring structure having no fewer than 3 and no more than 20 ring atoms.

公开(公告)号：US20200040282A1

公开(公告)日：2020-02-06

申请号：US16595899

申请日：2019-10-08

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Kan-go CHUNG ,  Tomohiro MATSUKI ,  Tatsuya SAKAI ,  Kenji MOCHIDA ,  Yuushi MATSUMURA

IPC: C11D3/20 ,  H01L21/02 ,  C11D1/00

Abstract: A composition for cleaning a semiconductor substrate contains: a novolak resin; an organic acid not being a polymeric compound; and a solvent. A solid content concentration of the composition is no greater than 20% by mass. The organic acid is preferably a carboxylic acid. The carboxylic acid is preferably a monocarboxylic acid, polycarboxylic acid or a combination thereof. The molecular weight of the organic acid is preferably from 50 to 500. The content of the organic acid with respect to 10 parts by mass of the novolak resin is preferably from 0.001 parts by mass to 10 parts by mass. The solvent includes preferably an ether solvent, an alcohol solvent, or a combination thereof. The proportion of the ether solvent, the alcohol solvent, or the combination thereof in the solvent is preferably no less than 50% by mass.

公开(公告)号：US20190094695A1

公开(公告)日：2019-03-28

申请号：US16205502

申请日：2018-11-30

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Gouji WAKAMATSU ,  Tsubasa ABE ,  Yuushi MATSUMURA ,  Masayuki MIYAKE ,  Yoshio TAKIMOTO

IPC: G03F7/11 ,  C09D165/00 ,  G03F7/26 ,  C07D405/14 ,  C07D311/74 ,  C07D311/92 ,  C08G61/10 ,  H01L21/027

Abstract: The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US20160314984A1

公开(公告)日：2016-10-27

申请号：US15134508

申请日：2016-04-21

Applicant: JSR CORPORATION

Inventor： Yuushi MATSUMURA ,  Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Yoshio Takimoto

IPC: H01L21/308 ,  G03F7/11 ,  H01L21/3065

CPC classification number: G03F7/11 ,  C08G8/22 ,  C08G8/30 ,  C09D161/14 ,  G03F7/0041 ,  G03F7/094 ,  H01L21/0271

Abstract: A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.

Abstract translation: 一种方法包括在基底上施加组合物以在基底上形成涂膜。 在氧气浓度小于1体积％且温度高于450℃和800℃以下的气氛中加热涂膜，以在基材上形成膜。 该组合物包含包含芳环的化合物。 涂膜加热时的气氛中的氧浓度优选为0.1体积％以下。 涂膜加热时的气氛温度优选为500℃以上，600℃以下。

公开(公告)号：US20160257842A1

公开(公告)日：2016-09-08

申请号：US15059372

申请日：2016-03-03

Applicant: JSR CORPORATION

Inventor： Goji WAKAMATSU ,  Naoya NOSAKA ,  Yuushi MATSUMURA ,  Yoshio TAKIMOTO ,  Tsubasa ABE ,  Toru KIMURA

IPC: C09D161/14 ,  G03F7/36 ,  G03F7/11

CPC classification number: C09D161/14 ,  C08G8/20 ,  C08G8/36 ,  C08G14/04 ,  C08G14/12 ,  C09D161/34 ,  G03F7/11

Abstract: A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.

Abstract translation: 组合物包含化合物和溶剂。 该化合物包含含碳 - 碳三键的基团和至少一个具有芳环的部分结构。 在至少一个部分结构中构成芳环的苯核总数不小于4.至少一个部分结构优选包含由式（1）表示的部分结构。 p1，p2，p3和p4的总和优选为1以上.R 1〜R 4中的至少一个优选表示含有一价碳 - 碳三键的基团。 所述至少一种部分结构还优选包含由式（2）表示的部分结构。 q1，q2，q3和q4的总和优选为1以上.R5至R8中的至少一个优选表示含有一价碳 - 碳三键的基团。

公开(公告)号：US20140014620A9

公开(公告)日：2014-01-16

申请号：US13714406

申请日：2012-12-14

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Kazuhiko KOUMURA ,  Yuushi MATSUMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/091 ,  H01L21/0276

Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

Abstract translation: 用于形成抗蚀剂下层膜的树脂组合物包括具有芳环的树脂和具有由下式（i）表示的部分结构的交联剂。 X表示氧原子，硫原子，* -COO-或-NRA-。 R1表示氢原子或C1-30一价烃基。 R2表示羟基，磺胺基，氰基，硝基，C1-30一价烃基，C1-30一价羟基烃基或C1-30一价硫代烃基。 p为1〜3的整数。