公开(公告)号：US10053539B2

公开(公告)日：2018-08-21

申请号：US14955473

申请日：2015-12-01

Applicant: JSR Corporation

Inventor： Shin-ya Nakafuji ,  Goji Wakamatsu ,  Tsubasa Abe ,  Kazunori Sakai

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/306 ,  C08G65/40

CPC classification number: C08G65/4043 ,  C08G65/40 ,  C08G65/4031 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081

Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

公开(公告)号：US09620378B1

公开(公告)日：2017-04-11

申请号：US14757551

申请日：2015-12-24

Applicant: JSR Corporation

Inventor： Shin-ya Nakafuji ,  Goji Wakamatsu ,  Tsubasa Abe ,  Kazunori Sakai

IPC: G03F7/11 ,  H01L21/308 ,  H01L21/027 ,  C09D7/12 ,  C09D201/00 ,  C09D171/08 ,  C07C255/54 ,  C09D171/12

CPC classification number: C09D201/00 ,  C07C255/54 ,  C09D171/12 ,  G03F7/094

Abstract: A composition comprises: a compound having one partial structure represented by formula (1), and a solvent. n1 and n2 are each independently an integer of 0 to 2; and k1 and k2 are each independently an integer of 0 to 9. The compound preferably has an intermolecular bond-forming group. The compound is preferably represented by formula (2). Z represents the partial structure represented by the formula (1); Ar1 and Ar2 represent a substituted or unsubstituted arenediyl group having 6 to 20 carbon atoms; Ar3 and Ar4 represent a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and p1 and p2 are each independently an integer of 0 to 3.

公开(公告)号：US10036954B2

公开(公告)日：2018-07-31

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun Aoki ,  Hiromitsu Tanaka ,  Goji Wakamatsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/38 ,  G03F7/075 ,  G03F7/32 ,  C07C279/08 ,  H01L21/308 ,  H01L21/027 ,  H01L21/02 ,  C07C217/18 ,  H01L21/306 ,  C08L61/06 ,  C08G8/04 ,  G03F7/26 ,  C08G8/20 ,  C08G8/36 ,  C09D161/14 ,  C09D183/04 ,  G03F7/40

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

公开(公告)号：US09581905B2

公开(公告)日：2017-02-28

申请号：US14959223

申请日：2015-12-04

Applicant: JSR CORPORATION

Inventor： Shin-ya Nakafuji ,  Fumihiro Toyokawa ,  Goji Wakamatsu ,  Shingo Takasugi ,  Tooru Kimura

IPC: G03F7/16 ,  G03F7/36 ,  G03F7/11 ,  C07C33/38 ,  C07C15/50 ,  C08F38/00 ,  C07C33/28 ,  C07C39/21 ,  C07C43/215 ,  C07C25/24 ,  H01L21/027 ,  C07C211/50 ,  C07C211/58 ,  C07C15/54 ,  C07C15/58 ,  C07C15/14 ,  C07C15/18

CPC classification number: G03F7/11 ,  C07C15/14 ,  C07C15/18 ,  C07C15/50 ,  C07C15/54 ,  C07C15/58 ,  C07C25/24 ,  C07C33/28 ,  C07C33/38 ,  C07C39/21 ,  C07C43/215 ,  C07C211/50 ,  C07C211/58 ,  C08F38/00 ,  G03F7/094 ,  G03F7/168 ,  G03F7/36 ,  H01L21/0271

Abstract: A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.

Abstract translation: 用于成膜的组合物包括由式（1）表示的化合物和溶剂。 在式（1）中，R 1，R 2和R 3各自独立地表示由式（a）表示的基团。 在式（a）中，RA表示氢原子，芳基或未被取代或被羟基和芳基中的至少一个取代的烷基。 RB表示单键或亚芳基。 芳基和亚芳基的芳环上的一部分或全部氢原子可以被卤素原子，羟基，氨基，硫烷基或碳原子数为1〜20的一价有机基团取代 而不包括芳环。

公开(公告)号：US11243468B2

公开(公告)日：2022-02-08

申请号：US16564499

申请日：2019-09-09

Applicant: JSR CORPORATION

Inventor： Naoya Nosaka ,  Goji Wakamatsu ,  Tsubasa Abe ,  Ichihiro Miura ,  Kengo Ehara ,  Hiroki Nakatsu ,  Hiroki Nakagawa

IPC: G03F7/20 ,  G03F7/038 ,  G03F7/09 ,  C08G61/12 ,  G03F7/039 ,  C08G61/04

Abstract: A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R1 and R2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R1 and R2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R1 and R2 bond.

公开(公告)号：US20180348633A1

公开(公告)日：2018-12-06

申请号：US16100501

申请日：2018-08-10

Applicant: JSR CORPORATION

Inventor： Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Kazunori Sakai ,  Yuushi Matsumura ,  Hayato Namai

IPC: G03F7/039 ,  G03F7/11 ,  G03F7/26

CPC classification number: G03F7/11 ,  G03F7/26 ,  H01L21/027

Abstract: A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), R1 represents a single bond or an oxygen atom, R2 represents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound. *—R1-R2—CN  (1)

公开(公告)号：US20160314984A1

公开(公告)日：2016-10-27

申请号：US15134508

申请日：2016-04-21

Applicant: JSR CORPORATION

Inventor： Yuushi MATSUMURA ,  Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Yoshio Takimoto

IPC: H01L21/308 ,  G03F7/11 ,  H01L21/3065

CPC classification number: G03F7/11 ,  C08G8/22 ,  C08G8/30 ,  C09D161/14 ,  G03F7/0041 ,  G03F7/094 ,  H01L21/0271

Abstract: A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.

Abstract translation: 一种方法包括在基底上施加组合物以在基底上形成涂膜。 在氧气浓度小于1体积％且温度高于450℃和800℃以下的气氛中加热涂膜，以在基材上形成膜。 该组合物包含包含芳环的化合物。 涂膜加热时的气氛中的氧浓度优选为0.1体积％以下。 涂膜加热时的气氛温度优选为500℃以上，600℃以下。

公开(公告)号：US09412593B2

公开(公告)日：2016-08-09

申请号：US14662642

申请日：2015-03-19

Applicant: JSR CORPORATION

Inventor： Hayato Namai ,  Goji Wakamatsu

IPC: H01L21/027 ,  H01L21/033 ,  C08L47/00 ,  G03F7/09 ,  G03F7/20 ,  H01L21/02 ,  H01L21/311 ,  B05D3/02 ,  C08F12/32 ,  C08F12/34 ,  C09D125/16

CPC classification number: H01L21/0332 ,  B05D3/0254 ,  C08F12/32 ,  C08F12/34 ,  C08L47/00 ,  C09D125/16 ,  G03F7/09 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/31144

Abstract: A composition for film formation includes a compound represented by formula (1), and a solvent. R1 represents a monovalent group including an aromatic ring. n is an integer of 3 to 6. At least one monovalent group represented by R1 further includes a group including an ethylenic double bond. a plurality of R1s are identical or different. A part or all of hydrogen atoms on the benzene ring in the formula (1) and on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms.

Abstract translation: 用于成膜的组合物包括由式（1）表示的化合物和溶剂。 R 1表示包含芳环的一价基团。 n为3〜6的整数。由R 1表示的至少一个一价基团还包括含有烯属双键的基团。 多个R1相同或不同。 式（1）中苯环上和芳香环上的一部分或全部氢原子是未取代的或被卤原子或具有1-10个碳原子的烷基取代。

公开(公告)号：US11126084B2

公开(公告)日：2021-09-21

申请号：US16388238

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Naoya Nosaka ,  Goji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kazunori Sakai

IPC: G03F7/11 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C07C35/37 ,  C07C33/28 ,  C07C35/44 ,  C07C43/166 ,  H01L21/027 ,  H01L21/308 ,  C08F299/02 ,  H01L21/3065

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

公开(公告)号：US10520814B2

公开(公告)日：2019-12-31

申请号：US15672660

申请日：2017-08-09

Applicant: JSR CORPORATION

Inventor： Masayuki Miyake ,  Goji Wakamatsu ,  Tsubasa Abe ,  Kazunori Takanashi ,  Kazunori Sakai

IPC: G03F7/09 ,  G03F7/40 ,  G03F7/38 ,  C08G8/20 ,  G03F7/004 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  C09D161/06 ,  C09D161/12 ,  C09D161/14

Abstract: A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.