公开(公告)号：US20180068863A1

公开(公告)日：2018-03-08

申请号：US15812005

申请日：2017-11-14

Applicant: JSR CORPORATION

Inventor： Kenji FUJITA ,  Yoshio TAKIMOTO ,  Kang-go CHUNG

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02101

Abstract: A treatment agent for inhibiting substrate pattern collapse contains a polymer and a polar solvent. A treatment method of a substrate includes: applying the treatment agent onto a substrate having a pattern formed thereon; and drying the treatment agent applied onto the substrate. The polymer is preferably a hydrophilic polymer. In addition, the polymer preferably has at least one functional group selected from a hydroxy group, a carboxy group, an amide group, an amino group, a sulfo group and an aldehyde group. Furthermore, the polymer is preferably one selected from a vinyl polymer, a polysaccharide, a polyester, a polyether and a polyamide.

公开(公告)号：US20190094695A1

公开(公告)日：2019-03-28

申请号：US16205502

申请日：2018-11-30

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Gouji WAKAMATSU ,  Tsubasa ABE ,  Yuushi MATSUMURA ,  Masayuki MIYAKE ,  Yoshio TAKIMOTO

IPC: G03F7/11 ,  C09D165/00 ,  G03F7/26 ,  C07D405/14 ,  C07D311/74 ,  C07D311/92 ,  C08G61/10 ,  H01L21/027

Abstract: The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US20140030660A1

公开(公告)日：2014-01-30

申请号：US14038861

申请日：2013-09-27

Applicant: JSR CORPORATION

Inventor： Kazunori TAKANASHI ,  Yoshio TAKIMOTO ,  Takashi MORI ,  Kazuo NAKAHARA ,  Masayuki MOTONARI

IPC: G03F7/11 ,  G03F7/26

CPC classification number: G03F7/11 ,  G03F7/0002 ,  G03F7/094 ,  G03F7/26

Abstract: A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

Abstract translation: 多层抗蚀剂工艺图案形成方法包括在衬底上提供无机膜。 在无机膜上设置保护膜。 在保护膜上设置抗蚀剂图案。 通过利用抗蚀剂图案作为掩模的蚀刻在衬底上提供图案。 多层抗蚀剂工艺无机成膜组合物包括化合物，有机溶剂和交联促进剂。 该化合物包括包含可水解基团的金属化合物，包含可水解基团的金属化合物的水解产物，包含可水解基团的金属化合物的水解缩合产物或其组合。 该化合物包括属于元素周期表第6族，第12族或第13族的至少一种金属元素。

公开(公告)号：US20160011512A1

公开(公告)日：2016-01-14

申请号：US14862352

申请日：2015-09-23

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Fumihiro TOYOKAWA ,  Gouji WAKAMATSU ,  Yoshio TAKIMOTO ,  Katsuhisa MIZOGUCHI ,  Takashi OKADA ,  Takaaki UNO ,  Takeshi ENDO ,  Masaki MORITSUGU

IPC: G03F7/11 ,  G03F7/36 ,  H01L21/02 ,  C08G65/38 ,  C09D171/00 ,  G03F7/16 ,  C07C255/54

CPC classification number: G03F7/11 ,  C07C255/54 ,  C07D493/10 ,  C08G65/38 ,  C08G65/40 ,  C09D171/00 ,  C09D171/10 ,  G03F7/094 ,  G03F7/16 ,  G03F7/36 ,  H01L21/02118

Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.

Abstract translation: 组合物包括包含由式（1）表示的部分结构的化合物和溶剂。 在式（1）中，X 1和X 2各自独立地表示与X 1或X 2相邻的与环碳原子一起构成的具有4〜10个环原子的取代或未取代的环结构。 n1和n2各自独立地为0〜2的整数， k1和k2的和各自独立地为1〜8的整数，其中k1和k2之和不小于2且不大于16.该化合物优选由式（2）表示。 式（1）中的k1和k2之和优选为3以上。

公开(公告)号：US20140220783A1

公开(公告)日：2014-08-07

申请号：US14249432

申请日：2014-04-10

Applicant: JSR Corporation

Inventor： Kazuhiko KOUMURA ,  Shinya MINEGISHI ,  Takashi MORI ,  Kyoyu YASUDA ,  Yoshio TAKIMOTO ,  Shinya NAKAFUJI ,  Toru KIMURA

IPC: H01L21/308

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上提供抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括玻璃化转变温度为0至180℃的第一聚合物。在抗蚀剂下层膜的表面上提供硅基氧化物膜。 使用抗蚀剂组合物在硅基氧化膜的表面上设置抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次干蚀刻硅基氧化物膜和抗蚀剂下层膜。 使用干蚀刻抗蚀剂下层膜作为掩模对基板进行干蚀刻。

公开(公告)号：US20130273476A1

公开(公告)日：2013-10-17

申请号：US13852120

申请日：2013-03-28

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Satoru MURAKAMI ,  Yushi MATSUMURA ,  Kazuhiko KOMURA ,  Yoshio TAKIMOTO ,  Shin-ya NAKAFUJI ,  Kyoyu YASUDA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。

公开(公告)号：US20160257842A1

公开(公告)日：2016-09-08

申请号：US15059372

申请日：2016-03-03

Applicant: JSR CORPORATION

Inventor： Goji WAKAMATSU ,  Naoya NOSAKA ,  Yuushi MATSUMURA ,  Yoshio TAKIMOTO ,  Tsubasa ABE ,  Toru KIMURA

IPC: C09D161/14 ,  G03F7/36 ,  G03F7/11

CPC classification number: C09D161/14 ,  C08G8/20 ,  C08G8/36 ,  C08G14/04 ,  C08G14/12 ,  C09D161/34 ,  G03F7/11

Abstract: A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.

Abstract translation: 组合物包含化合物和溶剂。 该化合物包含含碳 - 碳三键的基团和至少一个具有芳环的部分结构。 在至少一个部分结构中构成芳环的苯核总数不小于4.至少一个部分结构优选包含由式（1）表示的部分结构。 p1，p2，p3和p4的总和优选为1以上.R 1〜R 4中的至少一个优选表示含有一价碳 - 碳三键的基团。 所述至少一种部分结构还优选包含由式（2）表示的部分结构。 q1，q2，q3和q4的总和优选为1以上.R5至R8中的至少一个优选表示含有一价碳 - 碳三键的基团。

公开(公告)号：US20140272722A1

公开(公告)日：2014-09-18

申请号：US14290744

申请日：2014-05-29

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Yoshio TAKIMOTO ,  Kazuhiko KOMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/038 ,  B05D3/02

CPC classification number: G03F7/0384 ,  B05D3/0254 ,  C08G65/4006 ,  G03F7/094 ,  G03F7/11

Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由式（1）表示的结构单元的聚合物。 Ar 1，Ar 2，Ar 3和Ar 4各自独立地表示二价芳香族烃基或二价杂芳基。 包含在二价芳族烃基中的一部分或全部氢原子和由Ar 1，Ar 2，Ar 3或Ar 4表示的二价杂芳基可以被取代。 R1表示单键或碳原子数1〜20的二价烃基。 包含在由R1表示的二价烃基中的一部分或全部氢原子可以被取代。 由R 1表示的二价烃基的结构可以具有酯基，醚基或羰基。 Y表示羰基或磺酰基。 m为0或1. n为0或1。

公开(公告)号：US20130084705A1

公开(公告)日：2013-04-04

申请号：US13630340

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Shinya NAKAFUJI ,  Satoru MURAKAMI ,  Yoshio TAKIMOTO ,  Masayuki MOTONARl

IPC: C08G61/02 ,  C08G65/00 ,  C08F238/02 ,  H01L21/306

CPC classification number: G03F7/095 ,  C08G61/02 ,  C08G2261/3422 ,  G03F7/0384 ,  H01L21/0271

Abstract: A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract translation: 形成图案的方法包括使用第一组合物形成抗蚀剂下层膜，在基片上提供抗蚀剂下层膜。 第一组合物包括具有由下式（1）表示的结构单元的聚合物。 在式（1）中，Ar 1和Ar 2各自独立地表示由下式（2）表示的二价基团。 使用抗蚀剂组合物在抗蚀剂下层膜上设置抗蚀剂涂膜。 使用抗蚀剂涂膜形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模，依次干蚀刻抗蚀剂下层膜和基板，在基板上形成预定图案。

公开(公告)号：US20190264035A1

公开(公告)日：2019-08-29

申请号：US16388267

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Kang-go CHUNG ,  Yuushi MATSUMURA ,  Tomohiro MATSUKI ,  Yoshio TAKIMOTO

IPC: C09D5/00 ,  C09D161/06 ,  C09D161/18 ,  C09D161/34 ,  C09D125/06 ,  C09D161/12 ,  C09D125/18 ,  H01L21/02 ,  H01L21/311

Abstract: A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.