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公开(公告)号：US20210090951A1
公开(公告)日：2021-03-25
申请号：US16580567
申请日：2019-09-24
IPC分类号： H01L21/768 , H01L21/033 , H01L23/522
摘要： A method for fabricating a semiconductor device includes recessing a first odd hardmask and a first even hardmask to form recessed odd and even hardmasks, forming a first conductive hardmask including first conductive hardmask material on the recessed odd hardmask and a second conductive hardmask on the recessed even hardmask, and forming self-aligned vias at line ends corresponding to the first odd and even conductive lines based at least in part on the first and second conductive hardmasks.
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公开(公告)号：US10831102B2
公开(公告)日：2020-11-10
申请号：US15911320
申请日：2018-03-05
IPC分类号： C09D133/04 , G03F7/004 , G03F7/039 , G03F7/095 , G03F7/11 , G03F7/40 , G03F7/20 , G03F7/26 , G03F7/16
摘要： Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.
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公开(公告)号：US20200343338A1
公开(公告)日：2020-10-29
申请号：US16397452
申请日：2019-04-29
发明人： Praveen Joseph , Tao Li , Indira Seshadri , Ekmini A. De Silva
IPC分类号： H01L29/06 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L27/092 , H01L21/311
摘要： Semiconductor devices and methods of forming the same include forming a first dielectric layer around a semiconductor fin, formed from a first dielectric material, to a target height lower than a height of the semiconductor fin. A second dielectric layer is deposited on the first dielectric layer and is formed from a second dielectric material. A third dielectric layer, formed from the first dielectric material, is formed on the second dielectric layer. The second dielectric layer is etched away to expose a gap on the semiconductor fin. A portion of the semiconductor fin that is exposed in the gap is oxidized to form an isolation layer.
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公开(公告)号：US10734523B2
公开(公告)日：2020-08-04
申请号：US16102198
申请日：2018-08-13
发明人： Fee Li Lie , Mona Ebrish , Ekmini A. De Silva , Indira Seshadri , Gauri Karve , Lawrence A. Clevenger , Leigh Anne H. Clevenger , Nicolas Loubet
IPC分类号： H01L29/78 , H01L29/66 , H01L29/08 , H01L29/06 , H01L21/8234 , H01L21/762 , B82Y40/00
摘要： A method of forming a nanosheet device is provided. The method includes forming a nanosheet channel layer stack and dummy gate structure on a substrate. The method further includes forming a curved recess in the substrate surface adjacent to the nanosheet channel layer stack. The method further includes depositing a protective layer on the curved recess, dummy gate structure, and exposed sidewall surfaces of the nanosheet layer stack, and removing a portion of the protective layer on the curved recess to form a downward-spiked ridge around the rim of the curved recess. The method further includes extending the curved recess deeper into the substrate to form an extended recess, and forming a sacrificial layer at the surface of the extended recess in the substrate.
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公开(公告)号：US20200152460A1
公开(公告)日：2020-05-14
申请号：US16188843
申请日：2018-11-13
IPC分类号： H01L21/033 , H01L21/027 , G03F7/20
摘要： A patterning stack and methods are provided for semiconductor processing. The method includes forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths, the second material configured to provide adhesion to photoresist materials. The method also includes depositing a photoresist layer over the graded hardmask. The method additionally includes patterning the photoresist layer. The method further includes etching the graded hardmask. The method also includes removing the photoresist layer
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公开(公告)号：US10586697B2
公开(公告)日：2020-03-10
申请号：US16424950
申请日：2019-05-29
发明人： Ekmini A. De Silva , Nelson Felix , Jing Guo , Indira Seshadri
IPC分类号： H01L21/02 , H01L21/321 , H01L29/49 , G03F7/09 , H01L21/28 , G03F7/095 , H01L21/3105 , H01L21/027 , H01L21/3213 , H01L21/311 , H01L29/06 , H01L29/78
摘要： Embodiments of the present invention are directed to the wet stripping of an organic planarization layer (OPL) using reversible UV crosslinking and de-crosslinking. In a non-limiting embodiment of the invention, an interlayer dielectric is formed over a substrate. A trench is formed in the interlayer dielectric. A work function metal is formed over the interlayer dielectric such that a portion of the work function metal partially fills the trench. A UV sensitive OPL is formed over the work function metal such that a portion of the UV sensitive OPL fills the trench. The UV sensitive OPL can be crosslinked by applying light at a first UV frequency and de-crosslinked by applying light at a second UV frequency.
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公开(公告)号：US20200073246A1
公开(公告)日：2020-03-05
申请号：US16675276
申请日：2019-11-06
发明人： Yongan Xu , Jing Guo , Ekmini A. De Silva , Oleg Gluschenkov
IPC分类号： G03F7/20 , H01L21/027 , G03F7/075 , G03F7/085 , G03F7/09
摘要： An EUV lithographic structure and methods according to embodiments of the invention includes an EUV photosensitive resist layer disposed directly on an oxide hardmask layer, wherein the oxide hardmask layer is doped with dopant ions to form a doped oxide hardmask layer so as to improve adhesion between the EUV lithographic structure and the oxide hardmask. The EUV lithographic structure is free of a separate adhesion layer.
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公开(公告)号：US20200052107A1
公开(公告)日：2020-02-13
申请号：US16102198
申请日：2018-08-13
发明人： Fee Li Lie , Mona Ebrish , Ekmini A. De Silva , Indira Seshadri , Gauri Karve , Lawrence A. Clevenger , Leigh Anne H. Clevenger , Nicolas Loubet
IPC分类号： H01L29/78 , H01L29/66 , H01L29/08 , H01L29/06 , H01L21/8234 , H01L21/762
摘要： A method of forming a nanosheet device is provided. The method includes forming a nanosheet channel layer stack and dummy gate structure on a substrate. The method further includes forming a curved recess in the substrate surface adjacent to the nanosheet channel layer stack. The method further includes depositing a protective layer on the curved recess, dummy gate structure, and exposed sidewall surfaces of the nanosheet layer stack, and removing a portion of the protective layer on the curved recess to form a downward-spiked ridge around the rim of the curved recess. The method further includes extending the curved recess deeper into the substrate to form an extended recess, and forming a sacrificial layer at the surface of the extended recess in the substrate.
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公开(公告)号：US20190371613A1
公开(公告)日：2019-12-05
申请号：US16000485
申请日：2018-06-05
IPC分类号： H01L21/308 , H01L29/66 , H01L29/78 , H01L21/8234
摘要： Techniques for fin length variability control are provided. In one aspect, a method of patterning fins in a wafer includes: depositing a hardmask and a tone invert layer on the wafer; patterning trenches in the tone invert layer; forming inverse tone etch masks on the hardmask within the trenches, wherein the inverse tone etch masks include inner and outer inverse tone etch masks; forming a save mask with opposite ends thereof aligned with the outer inverse tone etch masks; using the save mask to selectively remove unmasked portions of the tone invert layer; removing the outer inverse tone etch masks, wherein the inner inverse tone etch masks that remain have a uniform length L; patterning the hardmask into individual fin hardmasks using the inner inverse tone etch masks; and patterning fins in the wafer using the fin hardmasks. A device having fins of a uniform length L is also provided.
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公开(公告)号：US20190322812A1
公开(公告)日：2019-10-24
申请号：US15956870
申请日：2018-04-19
IPC分类号： C08G79/04 , G03F7/16 , G03F7/20 , G03F7/38 , C09D185/02 , C23C16/04 , C23C16/40 , C23C16/455 , H01L21/02
摘要： Self-assembled monolayers (SAMs) were selectively prepared on portions of a substrate surface utilizing compounds comprising a hydrogen-bonding group and polymerizable diacetylene group. The SAMs were photopolymerized using ultraviolet light. The pre-polymerized and polymerized SAMs were more effective barriers against metal deposition in an atomic layer deposition process compared to similar compounds lacking these functional groups.
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