公开(公告)号：US20240213118A1

公开(公告)日：2024-06-27

申请号：US18088545

申请日：2022-12-24

申请人： Intel Corporation

发明人： Han Wui THEN ,  Marko RADOSAVLJEVIC ,  Heli Chetanbhai VORA ,  Samuel James BADER ,  Ahmad ZUBAIR ,  Thomas HOFF ,  Pratik KOIRALA ,  Michael S. BEUMER ,  Paul NORDEEN ,  Nityan NAIR

IPC分类号： H01L23/48 ,  H01L23/528 ,  H01L23/532 ,  H01L23/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/778 ,  H01P3/00

CPC分类号： H01L23/481 ,  H01L23/5286 ,  H01L23/53228 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786 ,  H01P3/003 ,  H01L2223/6627

摘要： Gallium nitride (GaN) devices with through-silicon vias for integrated circuit technology are described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen, the layer including gallium and nitrogen above a silicon substrate. A backside structure is below the silicon substrate and opposite the layer including gallium and nitrogen, the backside structure including conductive features and dielectric structures. The integrated circuit structure also includes a plurality of through-silicon via power bars having a staggered arrangement, individual ones of the through-silicon via power bars extending through the layer including gallium and nitrogen and through the silicon substrate to a corresponding one of the conductive features of the backside structure, and individual ones of the through-silicon via power bars having a tapered portion coupled to an essentially vertical portion.

公开(公告)号：US20240204059A1

公开(公告)日：2024-06-20

申请号：US18080907

申请日：2022-12-14

申请人： Intel Corporation

发明人： Pratik KOIRALA ,  Michael S. BEUMER ,  Marko RADOSAVLJEVIC ,  Han Wui THEN

IPC分类号： H01L29/32 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778

CPC分类号： H01L29/32 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/7786

摘要： Gallium nitride (GaN) with interlayers for integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate including silicon. A layer including gallium and nitrogen is above the substrate. The layer including gallium and nitrogen has an interlayer therein. The interlayer confines a plurality of defects to a lower portion of the layer including gallium and nitrogen.

公开(公告)号：US20240213140A1

公开(公告)日：2024-06-27

申请号：US18088541

申请日：2022-12-24

申请人： Intel Corporation

发明人： Han Wui THEN ,  Marko RADOSAVLJEVIC ,  Samuel James BADER ,  Ahmad ZUBAIR ,  Pratik KOIRALA ,  Michael S. BEUMER ,  Heli Chetanbhai VORA ,  Ibrahim BAN ,  Nityan NAIR ,  Thomas HOFF

IPC分类号： H01L23/522 ,  H01L23/48

CPC分类号： H01L23/5223 ,  H01L23/481 ,  H01L23/5226

摘要： Structures having backside high voltage capacitors for front side GaN-based devices are described. In an example, an integrated circuit structure includes a front side structure including a GaN-based device layer, and one or more metallization layers above the GaN-based device layer. A backside structure is below and coupled to the GaN-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.

公开(公告)号：US20240021725A1

公开(公告)日：2024-01-18

申请号：US18088546

申请日：2022-12-24

申请人： Intel Corporation

发明人： Han Wui THEN ,  Marko RADOSAVLJEVIC ,  Samuel James BADER ,  Pratik KOIRALA ,  Michael S. BEUMER ,  Heli Chetanbhai VORA ,  Ahmad ZUBAIR

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/7838 ,  H01L29/66462 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/4236

摘要： Gallium nitride (GaN) transistors with lateral depletion for integrated circuit technology are described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen above a silicon substrate, a gate structure over the layer including gallium and nitrogen, a source region on a first side of the gate structure, a drain region on a second side of the gate structure, and a source field plate laterally between the gate structure and the drain region, the source field plate laterally separated from the gate structure.