公开(公告)号：US20190393350A1

公开(公告)日：2019-12-26

申请号：US16013329

申请日：2018-06-20

申请人： INTEL CORPORATION

发明人： Erica J. Thompson ,  Aditya Kasukurti ,  Jun Sung Kang ,  Kai Loon Cheong ,  Biswajeet Guha ,  William Hsu ,  Bruce Beattie

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

摘要： A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.

公开(公告)号：US11640984B2

公开(公告)日：2023-05-02

申请号：US16363952

申请日：2019-03-25

申请人： Intel Corporation

发明人： Jack Kavalieros ,  Ian Young ,  Matthew Metz ,  Uygar Avci ,  Chia-Ching Lin ,  Owen Loh ,  Seung Hoon Sung ,  Aditya Kasukurti ,  Sou-Chi Chang ,  Tanay Gosavi ,  Ashish Verma Penumatcha

IPC分类号： H01L29/51 ,  H01L29/78

摘要： Techniques and mechanisms for providing electrical insulation or other protection of an integrated circuit (IC) device with a spacer structure which comprises an (anti)ferromagnetic material. In an embodiment, a transistor comprises doped source or drain regions and a channel region which are each disposed in a fin structure, wherein a gate electrode and an underlying dielectric layer of the transistor each extend over the channel region. Insulation spacers are disposed on opposite sides of the gate electrode, where at least a portion of one such insulation spacer comprises an (anti)ferroelectric material. Another portion of the insulation spacer comprises a non-(anti)ferroelectric material. In another embodiment, the two portions of the spacer are offset vertically from one another, wherein the (anti)ferroelectric portion forms a bottom of the spacer.

公开(公告)号：US11869973B2

公开(公告)日：2024-01-09

申请号：US16013329

申请日：2018-06-20

申请人： INTEL CORPORATION

发明人： Erica J. Thompson ,  Aditya Kasukurti ,  Jun Sung Kang ,  Kai Loon Cheong ,  Biswajeet Guha ,  William Hsu ,  Bruce Beattie

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L29/165 ,  H01L29/205 ,  H01L29/423

CPC分类号： H01L29/7853 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/6653 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/7855 ,  H01L21/02238 ,  H01L21/02241 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/165 ,  H01L29/205 ,  H01L29/42392

摘要： A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.

公开(公告)号：US20240088296A1

公开(公告)日：2024-03-14

申请号：US18514974

申请日：2023-11-20

申请人： Intel Corporation

发明人： Erica J. THOMPSON ,  Aditya Kasukurti ,  Jun Sung Kang ,  Kai Loon Cheong ,  Biswajeet Guha ,  William Hsu ,  Bruce Beattie

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/6653 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/7855 ,  H01L21/02238

摘要： A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.