Broadband harmonic matching network

    公开(公告)号:US10122336B1

    公开(公告)日:2018-11-06

    申请号:US15709593

    申请日:2017-09-20

    摘要: An amplifier circuit includes an RF amplifier that is configured to amplify an RF signal between a first terminal and a second terminal across an RF frequency range. The amplifier circuit includes a multi-stage impedance matching network having a broadband impedance transformer, a phase shifter, and a high-pass impedance transformer connected in series with one another between a first port of the amplifier circuit and the first terminal. The broadband impedance transformer provides impedance transformation in the RF frequency range. The phase shifter shifts a phase output port reflection coefficient in a second order harmonic frequency range that overlaps with a second order harmonic of the fundamental RF frequency. The high-pass impedance transformer transmits an RF signal in the RF frequency range while providing impedance transformation in the RF frequency range and transmits RF signals in the second order harmonic frequency range with low impedance.

    Compact class-F chip and wire matching topology

    公开(公告)号:US10003311B1

    公开(公告)日:2018-06-19

    申请号:US15386039

    申请日:2016-12-21

    摘要: An amplifier circuit includes an RF input port, an RF output port, a reference potential port, and an RF amplifier having an input terminal and a first output terminal. An output impedance matching network electrically couples the first output terminal to the RF output port. A first inductor is electrically connected in series between the first output terminal and the RF output port, a first LC resonator is directly electrically connected between the first output terminal and the reference potential port, and a second LC resonator is directly electrically connected between the first output terminal and the reference potential port. The first LC resonator is configured to compensate for an output capacitance of the RF amplifier at a center frequency of the RF signal. The second LC resonator is configured to compensate for a second order harmonic of the RF signal.

    Reflection type phase shifter with active device tuning

    公开(公告)号:US10181833B2

    公开(公告)日:2019-01-15

    申请号:US15460297

    申请日:2017-03-16

    摘要: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.

    RF amplifier with dual frequency response capacitor

    公开(公告)号:US10236833B2

    公开(公告)日:2019-03-19

    申请号:US15667195

    申请日:2017-08-02

    摘要: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

    RF Amplifier with Dual Frequency Response Capacitor

    公开(公告)号:US20190044483A1

    公开(公告)日:2019-02-07

    申请号:US15667195

    申请日:2017-08-02

    IPC分类号: H03F1/56 H03F3/195 H01L23/66

    摘要: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.