公开(公告)号：US09859395B2

公开(公告)日：2018-01-02

申请号：US14502882

申请日：2014-09-30

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef-Georg Bauer ,  Carsten Schaeffer ,  Oliver Humbel ,  Angelika Koprowski ,  Sirinpa Monayakul

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/40 ,  H01L29/861 ,  H01L29/739 ,  H01L29/78 ,  H01L23/31 ,  H01L21/283 ,  H01L29/47 ,  H01L29/06

CPC classification number: H01L29/66143 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/283 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/408 ,  H01L29/47 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.

公开(公告)号：US20150056788A1

公开(公告)日：2015-02-26

申请号：US14502882

申请日：2014-09-30

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef-Georg Bauer ,  Carsten Schaeffer ,  Oliver Humbel ,  Angelika Koprowski ,  Sirinpa Monayakul

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/283 ,  H01L29/47

CPC classification number: H01L29/66143 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/283 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/408 ,  H01L29/47 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.

Abstract translation: 半导体器件包括具有第一表面的半导体本体，布置在第一表面上的接触电极以及与接触电极相邻的第一表面上的钝化层。 钝化层包括在第一表面上具有非晶半绝缘层的层叠层，非晶半绝缘层上的第一氮化物层和第一氮化物层上的第二氮化物层。