公开(公告)号：US11211303B2

公开(公告)日：2021-12-28

申请号：US16701790

申请日：2019-12-03

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Jochen Hilsenbeck ,  Dethard Peters ,  Paul Salmen ,  Tobias Schmidutz ,  Vice Sodan ,  Christian Stahlhut ,  Juergen Steinbrenner ,  Bernd Zippelius

IPC: H01L29/417 ,  H01L23/31 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739 ,  H01L29/861 ,  H01L23/29 ,  H01L29/16

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.

公开(公告)号：US20200185297A1

公开(公告)日：2020-06-11

申请号：US16701790

申请日：2019-12-03

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Jochen Hilsenbeck ,  Dethard Peters ,  Paul Salmen ,  Tobias Schmidutz ,  Vice Sodan ,  Christian Stahlhut ,  Juergen Steinbrenner ,  Bernd Zippelius

IPC: H01L23/31 ,  H01L29/417 ,  H01L29/06 ,  H01L29/861 ,  H01L29/78 ,  H01L29/739

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.