-
公开(公告)号：US09705026B2
公开(公告)日：2017-07-11
申请号：US15009271
申请日：2016-01-28
发明人： Joost Willemen , Michael Mayerhofer , Ulrich Glaser , Yiqun Cao , Andreas Meiser , Magnus-Maria Hell , Matthias Stecher , Julien Lebon
IPC分类号： H01L21/00 , H01L31/173 , H01L27/02 , H01L27/06 , H01L27/15 , H01L29/808 , H02H3/20
CPC分类号： H01L31/173 , H01L27/0255 , H01L27/0629 , H01L27/15 , H01L29/808 , H02H3/20
摘要： A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.
-
公开(公告)号：US20160225932A1
公开(公告)日：2016-08-04
申请号：US15009271
申请日：2016-01-28
发明人： Joost Willemen , Michael Mayerhofer , Ulrich Glaser , Yiqun Cao , Andreas Meiser , Magnus-Maria Hell , Matthias Stecher , Julien Lebon
IPC分类号： H01L31/173 , H01L27/15 , H01L27/06 , H01L29/808 , H02H3/20 , H01L27/02
CPC分类号： H01L31/173 , H01L27/0255 , H01L27/0629 , H01L27/15 , H01L29/808 , H02H3/20
摘要： A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.
摘要翻译： 一种触发半导体器件中的雪崩击穿的方法包括提供电耦合和配置成发射辐射的辅助半导体器件之间的光耦合，该半导体器件包括埋在第一导电类型的第一层之下的pn结， 设置在表面和第一层之间的半导体本体和第二导电类型的掺杂半导体区域。 电耦合和光耦合包括触发由辅助半导体器件发射的辐射，并通过吸收半导体器件中的辐射来触发半导体器件中的雪崩击穿。
-
公开(公告)号：US20140029145A1
公开(公告)日：2014-01-30
申请号：US13951157
申请日：2013-07-25
发明人： Michael Mayerhofer , Andrei Cobzaru , Adrian Finney , Ulrich Glaser , Gilles Guerrero , Bogdan-Eugen Matei , Markus Mergens
IPC分类号： H01L27/02
CPC分类号： H01L27/0255 , H01L2924/0002 , H01L2924/00
摘要： A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.
摘要翻译： 用于电子部件的两级保护装置可防止瞬态干扰。 电子部件可以是半导体部件，并且可以包括一个或多个晶体管和/或集成电路。 保护装置连接到电子部件的至少第一触点和第二触点，并且在第一触点和第二触点之间基本上与被保护部件平行地设置。 保护装置包括具有至少一个二极管的第一级和通过电阻与第一级分离的第二级。 第二级包括至少一个二极管布置，其具有阴极至阴极设置的两个背对背布置的二极管。
-
公开(公告)号：US20150069424A1
公开(公告)日：2015-03-12
申请号：US14020391
申请日：2013-09-06
发明人： Joost Willemen , Michael Mayerhofer , Ulrich Glaser , Yiqun Cao , Andreas Meiser , Magnus-Maria Hell , Matthias Stecher , Julien Lebon
IPC分类号： H01L31/173 , H01L27/02
CPC分类号： H01L31/173 , H01L27/0255 , H01L27/0629 , H01L27/15 , H01L29/808 , H02H3/20
摘要： A semiconductor component includes an auxiliary semiconductor device configured to emit radiation. The semiconductor component further includes a semiconductor device. An electrical coupling and an optical coupling between the auxiliary semiconductor device and the semiconductor device are configured to trigger emission of radiation by the auxiliary semiconductor device and to trigger avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device. The semiconductor device includes a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer.
摘要翻译： 半导体部件包括被配置为发射辐射的辅助半导体器件。 半导体部件还包括半导体器件。 辅助半导体器件和半导体器件之间的电耦合和光耦合被配置为触发辅助半导体器件的辐射发射，并通过吸收半导体器件中的辐射来触发半导体器件中的雪崩击穿。 半导体器件包括埋在半导体主体的表面下方的第一导电类型的第一层和布置在表面和第一层之间的第二导电类型的掺杂半导体区域之间的pn结。
-
公开(公告)号：US10431708B2
公开(公告)日：2019-10-01
申请号：US14860918
申请日：2015-09-22
IPC分类号： H01L23/60 , H01L27/02 , H01L29/866 , H01L23/62 , H01L31/173 , H01L27/15 , H01L29/06 , H01L29/861 , H01L33/18 , H01L33/34 , H02H9/04
摘要： An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.
-
6.发明申请公开(公告)号：US20150249078A1
公开(公告)日：2015-09-03
申请号：US14628823
申请日：2015-02-23
发明人： Yiqun Cao , Ulrich Glaser , Magnus-Maria Hell , Julien Lebon , Michael Mayerhofer , Andreas Meiser , Matthias Stecher , Joost Willemen
IPC分类号： H01L27/02
CPC分类号： H01L27/0255 , H01L27/0292 , H02H9/046
摘要： An integrated circuit having an ESD protection structure is described. One embodiment includes a circuit section interconnected with a first terminal and with a second terminal and being operable at voltage differences between the first terminal and second terminal of greater than +10 V and less than −10 V. The integrated circuit additionally includes an ESD protection structure operable to protect the circuit section against electrostatic discharge between the first terminal and the second terminal. The ESD protection structure is operable with voltage differences between the first and second terminals of greater than +10 V and less than −10 V without triggering. The ESD protection structure is electrically and optically coupled to a photon source such that photons emitted by the photon source upon ESD pulse loading are absorbable in the ESD protection structure and an avalanche breakdown is initiatable by electron-hole pairs generated by the absorbed photons.
摘要翻译： 描述具有ESD保护结构的集成电路。 一个实施例包括与第一端子和第二端子互连的电路部分，并且可在第一端子和第二端子之间的电压差大于+ 10V且小于-10V的情况下工作。集成电路还包括ESD保护 结构可操作以保护电路部分免受第一端子和第二端子之间的静电放电。 ESD保护结构可以在第一和第二端子之间的电压差大于+10V且小于-10V而不触发。 ESD保护结构电光学耦合到光子源，使得在ESD脉冲负载时由光子源发射的光子在ESD保护结构中是可吸收的，并且雪崩击穿可由吸收的光子产生的电子 - 空穴对引发。
-
公开(公告)号：US20160013354A1
公开(公告)日：2016-01-14
申请号：US14860918
申请日：2015-09-22
IPC分类号： H01L31/173 , H01L27/15 , H01L27/02 , H01L33/18 , H01L29/861 , H01L23/60 , H01L29/06 , H01L33/34 , H02H9/04 , H01L29/866
CPC分类号： H01L31/173 , H01L23/60 , H01L27/0248 , H01L27/15 , H01L29/0646 , H01L29/861 , H01L29/866 , H01L33/18 , H01L33/34 , H01L2924/0002 , H01L2924/12044 , H02H9/04 , H01L2924/00
摘要： An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.
摘要翻译： 公开了一种包括ESD器件的集成电路。 一个实施例包括通过隔离区域与相邻半导体区域电隔离的半导体区域。 ESD器件和被配置为发射辐射的器件均形成在半导体区域内。
-
公开(公告)号：US09159719B2
公开(公告)日：2015-10-13
申请号：US13951157
申请日：2013-07-25
发明人： Michael Mayerhofer , Andrei Cobzaru , Adrian Finney , Ulrich Glaser , Gilles Guerrero , Bogdan-Eugen Matei , Markus Mergens
CPC分类号： H01L27/0255 , H01L2924/0002 , H01L2924/00
摘要： A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.
摘要翻译： 用于电子部件的两级保护装置可防止瞬态干扰。 电子部件可以是半导体部件，并且可以包括一个或多个晶体管和/或集成电路。 保护装置连接到电子部件的至少第一触点和第二触点，并且在第一触点和第二触点之间基本上与被保护部件平行地设置。 保护装置包括具有至少一个二极管的第一级和通过电阻与第一级分离的第二级。 第二级包括至少一个二极管布置，其具有阴极至阴极设置的两个背对背布置的二极管。
-
公开(公告)号：US09953968B2
公开(公告)日：2018-04-24
申请号：US14628823
申请日：2015-02-23
发明人： Yiqun Cao , Ulrich Glaser , Magnus-Maria Hell , Julien Lebon , Michael Mayerhofer , Andreas Meiser , Matthias Stecher , Joost Willemen
CPC分类号： H01L27/0255 , H01L27/0292 , H02H9/046
摘要： An integrated circuit having an ESD protection structure is described. One embodiment includes a circuit section interconnected with a first terminal and with a second terminal and being operable at voltage differences between the first terminal and second terminal of greater than +10 V and less than −10 V. The integrated circuit additionally includes an ESD protection structure operable to protect the circuit section against electrostatic discharge between the first terminal and the second terminal. The ESD protection structure is operable with voltage differences between the first and second terminals of greater than +10 V and less than −10 V without triggering. The ESD protection structure is electrically and optically coupled to a photon source such that photons emitted by the photon source upon ESD pulse loading are absorbable in the ESD protection structure and an avalanche breakdown is initiatable by electron-hole pairs generated by the absorbed photons.
-
公开(公告)号：US09263619B2
公开(公告)日：2016-02-16
申请号：US14020391
申请日：2013-09-06
发明人： Joost Willemen , Michael Mayerhofer , Ulrich Glaser , Yiqun Cao , Andreas Meiser , Magnus-Maria Hell , Matthias Stecher , Julien Lebon
IPC分类号： H01L27/15 , H01L31/173 , H01L27/02
CPC分类号： H01L31/173 , H01L27/0255 , H01L27/0629 , H01L27/15 , H01L29/808 , H02H3/20
摘要： A semiconductor component includes an auxiliary semiconductor device configured to emit radiation. The semiconductor component further includes a semiconductor device. An electrical coupling and an optical coupling between the auxiliary semiconductor device and the semiconductor device are configured to trigger emission of radiation by the auxiliary semiconductor device and to trigger avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device. The semiconductor device includes a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer.
摘要翻译： 半导体部件包括被配置为发射辐射的辅助半导体器件。 半导体部件还包括半导体器件。 辅助半导体器件和半导体器件之间的电耦合和光耦合被配置为触发辅助半导体器件的辐射发射，并通过吸收半导体器件中的辐射来触发半导体器件中的雪崩击穿。 半导体器件包括埋在半导体主体的表面下方的第一导电类型的第一层和布置在表面和第一层之间的第二导电类型的掺杂半导体区域之间的pn结。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.017 秒)
