公开(公告)号：US20240006218A1

公开(公告)日：2024-01-04

申请号：US18211656

申请日：2023-06-20

Applicant: Infineon Technologies AG

Inventor： Gregor Langer ,  Bernhard Goller ,  Nilesha Mishra ,  Matteo Piccin ,  Franz-Josef Pichler

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/304

CPC classification number: H01L21/6835 ,  H01L22/14 ,  H01L21/3043 ,  H01L2221/68318 ,  H01L2221/68381

Abstract: A method of manufacturing a semiconductor device in a semiconductor body is proposed. The method includes processing a semiconductor body at a first surface of the semiconductor body. The method further includes attaching the semiconductor body to a carrier via the first surface. The carrier includes an inner part and an outer part at least partly surrounding the inner part. The method further includes processing the semiconductor body at a second surface opposite to the first surface. The method further includes detaching the inner part of the carrier from the semiconductor body.

公开(公告)号：US11798807B2

公开(公告)日：2023-10-24

申请号：US17315943

申请日：2021-05-10

Applicant: Infineon Technologies AG

Inventor： Stefan Krivec ,  Ronny Kern ,  Stefan Kramp ,  Gregor Langer ,  Hannes Winkler ,  Stefan Woehlert

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L21/02

CPC classification number: H01L21/0485 ,  H01L21/02068 ,  H01L29/1608 ,  H01L29/45

Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

公开(公告)号：US20230317666A1

公开(公告)日：2023-10-05

申请号：US17712738

申请日：2022-04-04

Applicant: Infineon Technologies AG

Inventor： Gregor Langer ,  Michael Roesner ,  Ewald Wiltsche ,  Ronny Kern ,  Victorina Poenariu ,  Axel Koenig

IPC: H01L23/00 ,  H01L29/16

CPC classification number: H01L24/27 ,  H01L29/1608 ,  H01L2224/27848 ,  H01L2224/29155 ,  H01L2924/048 ,  H01L24/29

Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first layer is formed over a silicon carbide (SiC) layer. The first layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. The first layer includes a metal. First thermal energy may be directed to the first surface of the first layer to form a metal silicide layer from the metal of the first layer and silicon of the SiC layer. The metal silicide layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. Second thermal energy may be directed to the first surface of the metal silicide layer to reduce a surface roughness of the first surface of the metal silicide layer

公开(公告)号：US20210265168A1

公开(公告)日：2021-08-26

申请号：US17315943

申请日：2021-05-10

Applicant: Infineon Technologies AG

Inventor： Stefan Krivec ,  Ronny Kern ,  Stefan Kramp ,  Gregor Langer ,  Hannes Winkler ,  Stefan Woehlert

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L21/02

Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

公开(公告)号：US20230420257A1

公开(公告)日：2023-12-28

申请号：US18240520

申请日：2023-08-31

Applicant: Infineon Technologies AG

Inventor： Stefan Krivec ,  Ronny Kern ,  Stefan Kramp ,  Gregor Langer ,  Hannes Winkler ,  Stefan Woehlert

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L21/02

CPC classification number: H01L21/0485 ,  H01L29/1608 ,  H01L29/45 ,  H01L21/02068

Abstract: A chip is provided. In an embodiment, the chip includes a silicon carbide substrate, a first sputtered metal layer on the silicon carbide substrate, and at least one second sputtered metal layer on the first sputtered metal layer. The first sputtered metal layer and the at least one second sputtered metal layer form an electrical contact. In another embodiment, the chip includes a silicon carbide substrate, a nickel-silicon layer on the silicon carbide substrate, and a layer sequence including a titanium layer, a nickel-containing layer, and a gold-tin or silver layer on the nickel-silicon layer.

公开(公告)号：US11043383B2

公开(公告)日：2021-06-22

申请号：US16422373

申请日：2019-05-24

Applicant: Infineon Technologies AG

Inventor： Stefan Krivec ,  Ronny Kern ,  Stefan Kramp ,  Gregor Langer ,  Hannes Winkler ,  Stefan Woehlert

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L21/02

Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.