A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first layer is formed over a silicon carbide (SiC) layer. The first layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. The first layer includes a metal. First thermal energy may be directed to the first surface of the first layer to form a metal silicide layer from the metal of the first layer and silicon of the SiC layer. The metal silicide layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. Second thermal energy may be directed to the first surface of the metal silicide layer to reduce a surface roughness of the first surface of the metal silicide layer