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公开(公告)号：US20220005768A1
公开(公告)日：2022-01-06
申请号：US17216686
申请日：2021-03-30
Applicant: Industrial Technology Research Institute
Inventor： Jui-Wen Yang , Hsin-Cheng Lai , Chieh-Wei Feng , Tai-Jui Wang , Yu-Hua Chung , Tzu-Yang Ting
IPC: H01L23/00 , H01L23/498 , H01L23/64
Abstract: Provided is a semiconductor package structure including a redistribution layer (RDL) structure, a chip, an electronic device and a stress compensation layer. The RDL structure has a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the RDL structure. The electronic device is disposed in the RDL structure, electrically connected to the chip, and includes a dielectric layer disposed therein. The stress compensation layer is disposed in or outside the RDL structure. The dielectric layer provides a first stress between 50 Mpa and 200 Mpa in a first direction perpendicular to the second surface, the stress compensation layer provides a second stress between 50 Mpa and 200 Mpa in a second direction opposite to the first direction, and the difference between the first stress and the second stress does not exceed 60 Mpa.
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公开(公告)号：US11764166B2
公开(公告)日：2023-09-19
申请号：US17216686
申请日：2021-03-30
Applicant: Industrial Technology Research Institute , Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor： Jui-Wen Yang , Hsin-Cheng Lai , Chieh-Wei Feng , Tai-Jui Wang , Yu-Hua Chung , Tzu-Yang Ting
IPC: H01L23/00 , H01L23/64 , H01L23/498
CPC classification number: H01L23/562 , H01L23/49822 , H01L23/642 , H01L24/08 , H01L2224/08235
Abstract: Provided is a semiconductor package structure including a redistribution layer (RDL) structure, a chip, an electronic device and a stress compensation layer. The RDL structure has a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the RDL structure. The electronic device is disposed in the RDL structure, electrically connected to the chip, and includes a dielectric layer disposed therein. The stress compensation layer is disposed in or outside the RDL structure. The dielectric layer provides a first stress between 50 Mpa and 200 Mpa in a first direction perpendicular to the second surface, the stress compensation layer provides a second stress between 50 Mpa and 200 Mpa in a second direction opposite to the first direction, and the difference between the first stress and the second stress does not exceed 60 Mpa.
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公开(公告)号：US20240130657A1
公开(公告)日：2024-04-25
申请号：US18454074
申请日：2023-08-23
Applicant: Industrial Technology Research Institute
Inventor： Hsien-Wei Chiu , Tai-Jui Wang , Chieh-Wei Feng , Jui-Wen Yang
CPC classification number: A61B5/27 , A61B5/6804
Abstract: A physiological sensing device for sensing physiological signal of an organism is provided. The physiological sensing device includes a sensing chip, a coupling sensing electrode and a coupling dielectric stacked layer. The coupling sensing electrode is electrically connected to the sensing chip. The coupling dielectric stacked layer covers the coupling sensing electrode. The coupling dielectric stacked layer is located between the coupling sensing electrode and the organism. The coupling dielectric stacked layer includes a first dielectric layer and a second dielectric layer. The dielectric constant of the second dielectric layer is greater than that of the first dielectric layer. The second dielectric layer is located between the first dielectric layer and the organism.
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公开(公告)号：US11251115B1
公开(公告)日：2022-02-15
申请号：US17144144
申请日：2021-01-08
Applicant: Industrial Technology Research Institute
Inventor： Shao-An Yan , Chieh-Wei Feng , Tzu-Yang Ting , Tzu-Hao Yu , Chien-Hsun Chu , Jui-Wen Yang , Hsin-Cheng Lai
IPC: H01L23/498 , H01L21/48 , G06F30/3308 , G06F119/18
Abstract: A redistribution structure including a first redistribution layer is provided. The first redistribution layer includes a dielectric layer; at least one conductive structure located in the dielectric layer, wherein the at least one conductive structure has a width L; and at least one dummy structure located adjacent to the at least one conductive structure and located in the dielectric layer, and the at least one dummy structure has a width D, wherein there is a gap width S between the at least one dummy structure and the at least one conductive structure, and a degree of planarization DOP of the first redistribution layer is greater than or equal to 95%, wherein DOP=[1−(h/T)]*100%, and h refers to a difference between a highest height and a lowest height of a top surface of the dielectric layer; and T refers to a thickness of the at least one conductive structure.
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Patent Agency Ranking
公开(公告)号：US20210197643A1
公开(公告)日：2021-07-01
申请号：US16835294
申请日：2020-03-30
Applicant: Industrial Technology Research Institute
Inventor： Jui-Wen Yang , Yi-Cheng Lu , Min-Hsiung Liang , Tzu-Hao Yu , Tzu-Yang Ting
Abstract: A temperature control method, including periodically sensing an air temperature of a space, and periodically sensing a surface temperature of each of a plurality of interior surfaces; in response to the air temperature and the surface temperatures being less than a target temperature, calculating an air heating duration of an air conditioner and a surface heating duration of each of a plurality of heater devices arranged in an array according to the target temperature, the air temperature and the surface temperatures; performing an air heating operation according to the air heating duration and performing surface heating operations according to the surface heating durations; and in response to the air temperature currently sensed and the surface temperatures currently sensed reaching the target temperature, instructing the air conditioner to stop performing the air heating operation.
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公开(公告)号：US20190140106A1
公开(公告)日：2019-05-09
申请号：US15913897
申请日：2018-03-06
Inventor： Tai-Jui Wang , Yung-Hui Yeh , Jui-Wen Yang , Hsiao-Chiang Yao , Chun-Hung Chu
IPC: H01L29/786 , H01L29/66 , H01L29/49 , H01L27/12 , H01L21/02 , C23C16/24 , C23C16/34 , C23C16/40 , H01L51/05
Abstract: A thin film transistor including a flexible substrate, a semiconductor layer, a first gate, and a first gate dielectric layer is provided. The semiconductor layer is located on the flexible substrate. The first gate is located on the flexible substrate and corresponds to a portion of the semiconductor layer. The first gate dielectric layer is located between the first gate and the semiconductor layer. The first gate dielectric layer is in contact with the semiconductor layer, and the hydrogen atom concentration of the first gate dielectric layer is less than 6.5×1020 atoms/cm3. A method of manufacturing the thin film transistor is also provided.
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公开(公告)号：US20240088004A1
公开(公告)日：2024-03-14
申请号：US18452566
申请日：2023-08-21
Applicant: Industrial Technology Research Institute
Inventor： Tai-Jui Wang , Jui-Wen Yang , Chieh-Wei Feng , Chih Wei Lu , Hsien-Wei Chiu
IPC: H01L23/498 , H01L21/48 , H01L23/15
CPC classification number: H01L23/49822 , H01L21/486 , H01L23/15 , H01L23/49816 , H01L23/49827 , H01L23/49838
Abstract: A stacked wiring structure includes a first wiring substrate and a second wiring substrate. The first wiring substrate includes a first glass substrate, multiple first conductive through vias penetrating through the first glass substrate, and a first multi-layered redistribution wiring structure disposed on the first glass substrate. The second wiring substrate includes a second glass substrate, multiple second conductive through vias penetrating through the second glass substrate, and a second multi-layered redistribution wiring structure disposed on the second glass substrate. The first conductive through vias are electrically connected to the second conductive through vias. The first glass substrate is spaced apart from the second glass substrate. The first multi-layered redistribution wiring structure is spaced apart from the second multi-layered redistribution wiring structure by the first glass substrate and the second glass substrate.
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公开(公告)号：US20230165529A1
公开(公告)日：2023-06-01
申请号：US17584394
申请日：2022-01-26
Applicant: Industrial Technology Research Institute
Inventor： Yu-Hua Chung , Tai-Jui Wang , Chieh-Wei Feng , Tzu-Yang Ting , Jui-Wen Yang
CPC classification number: A61B5/683 , A61B5/7203 , A61B5/263 , A61B5/277 , A61B5/271 , A61B2562/046
Abstract: A physiological sensing device is provided, including an electronic component, a coupled sensing electrode, a coupling dielectric layer, and a wire layer. The coupled sensing electrode is configured to sense a physiological signal of an object, wherein there is a capacitance value between the object and the coupled sensing electrode. The coupling dielectric layer is disposed under the coupled sensing electrode, so that the capacitance value is between 1 nF and 10 nF. The wire layer is electrically connected to the electronic component and the coupled sensing electrode.
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公开(公告)号：US20230071946A1
公开(公告)日：2023-03-09
申请号：US17707964
申请日：2022-03-30
Applicant: Industrial Technology Research Institute
Inventor： Chieh-Wei Feng , Tai-Jui Wang , Jui-Wen Yang , Tzu-Yang Ting
IPC: H01L23/498 , G01R1/073 , H01L23/66
Abstract: The present disclosure provides a package structure, an antenna module, and a probe card. The package structure includes a connection member and a first redistribution structure disposed on the connection member. The connection member includes a conductive connector and an insulation layer surrounding the conductive connector. The first redistribution structure includes a first dielectric layer, and a first wiring pattern, and a first device. The first dielectric layer is disposed on the connection member. The first wiring pattern is disposed in the first dielectric layer. The first device is disposed above the first dielectric layer and is electrically connected to the conductive connector.
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