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公开(公告)号：US20180052115A1
公开(公告)日：2018-02-22
申请号：US15382748
申请日：2016-12-19
发明人： Tzung-Te Chen , Hsueh-Hsing Liu , Chun-Wen Chu , Yi-Keng Fu
CPC分类号： G01N21/8422 , G01B11/24 , G01N2021/8427 , H01L22/12
摘要： An apparatus for measuring a curvature of a thin film includes a light emitting module, a first optical module, a second optical module, a third optical module, and an image analysis module. The light emitting module emits a single laser to be used as an incident light. The incident light is transmitted through a first optical path provided by the first optical module, then the incident light is guided by the second optical module to be incident to the thin film through a second optical path. A reflected light reflected by the thin film is transmitted through the second optical path, then guided by the third optical module to be transmitted along a third optical path. The image analysis module determines the curvature of the thin film according to the characteristic of the reflected light.
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公开(公告)号：US20230132155A1
公开(公告)日：2023-04-27
申请号：US17994403
申请日：2022-11-28
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu
IPC分类号： H01L29/267
摘要： Provided is a semiconductor substrate with a balance stress. The semiconductor substrate includes a ceramics base, a nucleation layer and a first buffer layer doped with a first dopant. The ceramics base has an off-cut angle other than 0 degree. The nucleation layer is disposed on the ceramics base. The first buffer layer is disposed on the nucleation layer. The first dopant includes C, Fe or a combination thereof. The first buffer layer provides compressive stress to the ceramic base. The concentration of the first dopant in the first buffer layer is increased away from the ceramics base. The curvature of the semiconductor substrate is between 16 km−1 and −16 km−1.
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公开(公告)号：US10957814B2
公开(公告)日：2021-03-23
申请号：US16431748
申请日：2019-06-05
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu
摘要： An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.
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公开(公告)号：US09970880B2
公开(公告)日：2018-05-15
申请号：US15382748
申请日：2016-12-19
发明人： Tzung-Te Chen , Hsueh-Hsing Liu , Chun-Wen Chu , Yi-Keng Fu
CPC分类号： G01N21/8422 , G01B11/24 , G01N2021/8427 , H01L22/12
摘要： An apparatus for measuring a curvature of a thin film includes a light emitting module, a first optical module, a second optical module, a third optical module, and an image analysis module. The light emitting module emits a single laser to be used as an incident light. The incident light is transmitted through a first optical path provided by the first optical module, then the incident light is guided by the second optical module to be incident to the thin film through a second optical path. A reflected light reflected by the thin film is transmitted through the second optical path, then guided by the third optical module to be transmitted along a third optical path. The image analysis module determines the curvature of the thin film according to the characteristic of the reflected light.
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公开(公告)号：US11742394B2
公开(公告)日：2023-08-29
申请号：US17544960
申请日：2021-12-08
发明人： Hsueh-Hsing Liu
IPC分类号： H01L29/267 , H01L33/12 , H01L29/06 , H01L33/32 , H01L29/205 , H01L29/778
CPC分类号： H01L29/267 , H01L29/0649 , H01L33/12 , H01L29/205 , H01L29/7786 , H01L33/32
摘要： Provided are a semiconductor substrate and a transistor. The semiconductor substrate includes a base, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer and a nucleation layer. The insulating layer is disposed on the base. The semiconductor layer is disposed on the insulating layer. The wide bandgap diffusion buffer layer is disposed on the semiconductor layer, wherein the bandgap of the wide bandgap buffer diffusion layer is higher than 2.5 eV. The nucleation layer is disposed on the wide bandgap diffusion buffer layer, wherein the nucleation layer includes an aluminum-containing layer.
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公开(公告)号：US20240258370A1
公开(公告)日：2024-08-01
申请号：US18542737
申请日：2023-12-17
发明人： Hsueh-Hsing Liu , Chia-Lung Tsai
IPC分类号： H01L29/06 , H01L29/778
CPC分类号： H01L29/0638 , H01L29/7786
摘要： A semiconductor component including a semiconductor layer, a barrier layer, a leakage current suppression layer, an ohmic contact layer and an electrode layer is provided. The semiconductor layer has a protrusion and a top surface, adjacent to the protrusion. The protrusion includes a top surface and a side surface. The barrier layer is disposed on the top surface of the protrusion. The leakage current suppression layer is disposed on the top surface of the semiconductor layer. The ohmic contact layer is disposed on the leakage current suppression layer, and contacts the side surface of the protrusion and a side surface of the barrier layer. The ohmic contact layer does not contact the top surface of the semiconductor layer. The electrode layer is disposed on the ohmic contact layer.
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公开(公告)号：US20230129528A1
公开(公告)日：2023-04-27
申请号：US17544960
申请日：2021-12-08
发明人： Hsueh-Hsing Liu
IPC分类号： H01L29/267 , H01L33/12 , H01L29/06
摘要： Provided are a semiconductor substrate and a transistor. The semiconductor substrate includes a base, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer and a nucleation layer. The insulating layer is disposed on the base. The semiconductor layer is disposed on the insulating layer. The wide bandgap diffusion buffer layer is disposed on the semiconductor layer, wherein the bandgap of the wide bandgap buffer diffusion layer is higher than 2.5 eV. The nucleation layer is disposed on the wide bandgap diffusion buffer layer, wherein the nucleation layer includes an aluminum-containing layer.
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公开(公告)号：US11233173B2
公开(公告)日：2022-01-25
申请号：US17006899
申请日：2020-08-31
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu , Chang Da Tsai
摘要： An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.
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公开(公告)号：US20210005780A1
公开(公告)日：2021-01-07
申请号：US17006899
申请日：2020-08-31
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu , Chang Da Tsai
摘要： An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.
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公开(公告)号：US10074533B1
公开(公告)日：2018-09-11
申请号：US15723390
申请日：2017-10-03
发明人： Po-Chun Yeh , Kan-Hsueh Tsai , Chuan-Wei Tsou , Heng-Yuan Lee , Hsueh-Hsing Liu , Han-Chieh Ho , Yi-Keng Fu
IPC分类号： H01L21/02 , H01L29/06 , H01L29/267 , H01L29/16 , H01L29/20
CPC分类号： H01L21/02035 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L29/0657 , H01L29/16 , H01L29/2003 , H01L29/267
摘要： This disclosure provides an epitaxial wafer, which includes: a silicon wafer having a central area and an extremity area enclosing the central area, the extremity area having a stepped profile; and an nitride epitaxial layer formed on the silicon wafer; wherein, the stepped profile has a width between 10 and 1500 μm and a height between 1 and 500 μm.
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