公开(公告)号：US11233173B2

公开(公告)日：2022-01-25

申请号：US17006899

申请日：2020-08-31

申请人： Industrial Technology Research Institute ,  OPTO TECH CORP.

发明人： Chia-Lung Tsai ,  Hsueh-Hsing Liu ,  Chang Da Tsai

IPC分类号： H01L33/14 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32 ,  H01L33/12

摘要： An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.

公开(公告)号：US20210005780A1

公开(公告)日：2021-01-07

申请号：US17006899

申请日：2020-08-31

申请人： Industrial Technology Research Institute ,  OPTO TECH CORP.

发明人： Chia-Lung Tsai ,  Hsueh-Hsing Liu ,  Chang Da Tsai

IPC分类号： H01L33/14 ,  H01L33/06 ,  H01L33/02

摘要： An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.

公开(公告)号：US20210005778A1

公开(公告)日：2021-01-07

申请号：US17006891

申请日：2020-08-31

申请人： Industrial Technology Research Institute ,  OPTO TECH CORP.

发明人： Chia-Yen Huang ,  Chang Da Tsai

IPC分类号： H01L33/00 ,  H01L33/12 ,  H01L33/02

摘要： A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes Al1-xGaxN, where 0≤x

公开(公告)号：US11688825B2

公开(公告)日：2023-06-27

申请号：US17006891

申请日：2020-08-31

申请人： Industrial Technology Research Institute ,  OPTO TECH CORP.

发明人： Chia-Yen Huang ,  Chang Da Tsai

IPC分类号： H01L33/00 ,  H01L33/12 ,  H01L33/02 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/0095 ,  H01L33/025 ,  H01L33/12 ,  H01L33/007 ,  H01L33/04 ,  H01L33/06 ,  H01L33/325

摘要： A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes Al1-xGaxN, where 0≤x