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公开(公告)号：US20240258370A1
公开(公告)日：2024-08-01
申请号：US18542737
申请日：2023-12-17
发明人： Hsueh-Hsing Liu , Chia-Lung Tsai
IPC分类号： H01L29/06 , H01L29/778
CPC分类号： H01L29/0638 , H01L29/7786
摘要： A semiconductor component including a semiconductor layer, a barrier layer, a leakage current suppression layer, an ohmic contact layer and an electrode layer is provided. The semiconductor layer has a protrusion and a top surface, adjacent to the protrusion. The protrusion includes a top surface and a side surface. The barrier layer is disposed on the top surface of the protrusion. The leakage current suppression layer is disposed on the top surface of the semiconductor layer. The ohmic contact layer is disposed on the leakage current suppression layer, and contacts the side surface of the protrusion and a side surface of the barrier layer. The ohmic contact layer does not contact the top surface of the semiconductor layer. The electrode layer is disposed on the ohmic contact layer.
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公开(公告)号：US11233173B2
公开(公告)日：2022-01-25
申请号：US17006899
申请日：2020-08-31
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu , Chang Da Tsai
摘要： An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.
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公开(公告)号：US20210005780A1
公开(公告)日：2021-01-07
申请号：US17006899
申请日：2020-08-31
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu , Chang Da Tsai
摘要： An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.
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公开(公告)号：US20160172536A1
公开(公告)日：2016-06-16
申请号：US14583775
申请日：2014-12-29
发明人： Chia-Lung Tsai , Yen-Hsiang Fang , Pao-Chu Tzeng
CPC分类号： H01L33/40
摘要： A semiconductor light-emitting structure including a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a magnetic layer is provided. The light-emitting layer is disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The first electrode is electrically connected to the first-type doped semiconductor layer, and the second electrode is electrically connected to the second-type doped semiconductor layer. The magnetic layer connects the first electrode and the first-type doped semiconductor layer. At least a portion of the magnetic layer is magnetic, and the bandgap of at least another portion of the magnetic layer is greater than 0 eV and is less than or equal to 5 eV. The material of the magnetic layer includes metal, metal oxide, or a combination thereof.
摘要翻译： 提供了包括第一掺杂半导体层，第二掺杂半导体层，发光层，第一电极，第二电极和磁性层的半导体发光结构。 发光层设置在第一掺杂半导体层和第二掺杂半导体层之间。 第一电极电连接到第一掺杂半导体层，第二电极与第二掺杂半导体层电连接。 磁性层连接第一电极和第一掺杂半导体层。 磁性层的至少一部分是磁性的，并且磁性层的至少另一部分的带隙大于0eV且小于或等于5eV。 磁性层的材料包括金属，金属氧化物或其组合。
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公开(公告)号：US20150179880A1
公开(公告)日：2015-06-25
申请号：US14139880
申请日：2013-12-24
发明人： Yen-Hsiang Fang , Rong Xuan , Chia-Lung Tsai , Yu-Hsiang Chang
摘要： A nitride light emitting diode structure including a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, a first metal pad, a second metal pad and a magnetic film is disclosed. The magnetic film disposed between the first metal pad and the first type doped semiconductor layer includes a zinc oxide (ZnO) layer doped with cobalt (Co). The content of Co in the ZnO layer ranges from 5% to 25% by molar ratio.
摘要翻译： 公开了一种包括第一掺杂半导体层，第二掺杂半导体层，发光层，第一金属焊盘，第二金属焊盘和磁性膜的氮化物发光二极管结构。 设置在第一金属焊盘和第一类型掺杂半导体层之间的磁性膜包括掺杂有钴（Co）的氧化锌（ZnO）层。 ZnO层中Co的含量为5〜25摩尔％。
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公开(公告)号：US10957814B2
公开(公告)日：2021-03-23
申请号：US16431748
申请日：2019-06-05
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu
摘要： An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.
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公开(公告)号：US20170104074A1
公开(公告)日：2017-04-13
申请号：US14951512
申请日：2015-11-25
发明人： Wei-Hung Kuo , Suh-Fang Lin , Kun-Fong Lin , Chia-Lung Tsai
CPC分类号： H01L29/2003 , H01L29/34 , H01L29/41766 , H01L29/452 , H01L29/778 , H01L31/0224 , H01L31/02363 , H01L31/1035 , H01L31/1856 , H01L33/16 , H01L33/30 , H01L33/382 , Y02E10/544
摘要： In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.
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公开(公告)号：US20150069321A1
公开(公告)日：2015-03-12
申请号：US14181738
申请日：2014-02-17
发明人： Yi-Keng Fu , Chia-Lung Tsai , Hung-Tse Chen , Chih-Hsuen Chou
IPC分类号： H01L33/06
CPC分类号： H01L33/325 , H01L33/025 , H01L33/22
摘要： A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.
摘要翻译： 提供了包括第一类掺杂GaN衬底，第一类型掺杂半导体层，有源层，第二类型半导体层，第一电极和第二电极的发光二极管（LED）。 第一掺杂GaN衬底具有第一掺杂元素。 第一类型半导体层设置在第一种掺杂的GaN衬底上。 第一类型半导体层具有与第一掺杂元素不同的第二掺杂元素，并且第二掺杂元素的掺杂浓度可以在第一掺杂GaN的界面处具有3E18 / cm3至1E20 / cm3的峰值 衬底和第一类半导体层。 有源层设置在第一型半导体层上，第二类型半导体层设置在有源层上。 第一电极和第二电极分别设置在第一型掺杂GaN衬底和第二类型半导体层上。 还提供其他LED。
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公开(公告)号：US20230132155A1
公开(公告)日：2023-04-27
申请号：US17994403
申请日：2022-11-28
发明人： Chia-Lung Tsai , Hsueh-Hsing Liu
IPC分类号： H01L29/267
摘要： Provided is a semiconductor substrate with a balance stress. The semiconductor substrate includes a ceramics base, a nucleation layer and a first buffer layer doped with a first dopant. The ceramics base has an off-cut angle other than 0 degree. The nucleation layer is disposed on the ceramics base. The first buffer layer is disposed on the nucleation layer. The first dopant includes C, Fe or a combination thereof. The first buffer layer provides compressive stress to the ceramic base. The concentration of the first dopant in the first buffer layer is increased away from the ceramics base. The curvature of the semiconductor substrate is between 16 km−1 and −16 km−1.
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公开(公告)号：US09130122B2
公开(公告)日：2015-09-08
申请号：US14181738
申请日：2014-02-17
发明人： Yi-Keng Fu , Chia-Lung Tsai , Hung-Tse Chen , Chih-Hsuen Chou
CPC分类号： H01L33/325 , H01L33/025 , H01L33/22
摘要： A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.
摘要翻译： 提供了包括第一类掺杂GaN衬底，第一类型掺杂半导体层，有源层，第二类型半导体层，第一电极和第二电极的发光二极管（LED）。 第一掺杂GaN衬底具有第一掺杂元素。 第一类型半导体层设置在第一种掺杂的GaN衬底上。 第一类型半导体层具有与第一掺杂元素不同的第二掺杂元素，并且第二掺杂元素的掺杂浓度可以在第一掺杂GaN的界面处具有3E18 / cm3至1E20 / cm3的峰值 衬底和第一类半导体层。 有源层设置在第一型半导体层上，第二类型半导体层设置在有源层上。 第一电极和第二电极分别设置在第一型掺杂GaN衬底和第二类型半导体层上。 还提供其他LED。
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