公开(公告)号：US09111851B2

公开(公告)日：2015-08-18

申请号：US13686935

申请日：2012-11-28

申请人： Industrial Technology Research Institute

发明人： Wei-Hung Kuo ,  Suh-Fang Lin ,  Rong Xuan

IPC分类号： H01L29/15 ,  H01L29/66 ,  H01L31/06 ,  H01L21/336 ,  H01L29/20 ,  H01L29/778 ,  H01L21/28 ,  H01L29/423 ,  H01L29/43 ,  H01L29/45 ,  H01L29/10

CPC分类号： H01L29/2003 ,  H01L21/28264 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/452 ,  H01L29/778 ,  H01L29/7786

摘要： Provided is an enhancement mode GaN-based transistor device including an epitaxial stacked layer disposed on a substrate; a source layer and a drain layer disposed on a surface of the epitaxial stacked layer; a p-type metal oxide layer disposed between the source layer and the drain layer; and a gate layer disposed on the p-type metal oxide layer. Besides, the p-type metal oxide layer includes a body part disposed on the surface of the epitaxial stacked layer, and a plurality of extension parts connecting the body part and extending into the epitaxial stacked layer. With such structure, the enhancement mode GaN-based transistor device can effectively suppress generation of the gate leakage current.

摘要翻译： 提供了一种增强型GaN基晶体管器件，其包括设置在衬底上的外延层叠层; 设置在所述外延层叠层的表面上的源极层和漏极层; 设置在源极层和漏极层之间的p型金属氧化物层; 以及设置在p型金属氧化物层上的栅极层。 此外，p型金属氧化物层包括设置在外延层叠层的表面上的主体部分和连接主体部分并延伸到外延层叠层中的多个延伸部分。 利用这种结构，增强型GaN基晶体管器件可以有效地抑制栅极漏电流的产生。

公开(公告)号：US20240145641A1

公开(公告)日：2024-05-02

申请号：US18082540

申请日：2022-12-15

申请人： Industrial Technology Research Institute

发明人： Kai-Ling Liang ,  Wei-Hung Kuo ,  Hui-Tang Shen ,  Chun-I Wu ,  Suh-Fang Lin

IPC分类号： H01L33/50 ,  H01L27/146 ,  H01L33/40 ,  H01L33/46

CPC分类号： H01L33/504 ,  H01L27/14627 ,  H01L33/405 ,  H01L33/46

摘要： A color conversion panel and a display device are provided. The color conversion panel includes an opaque substrate and a sapphire substrate. The opaque substrate includes a plurality of first pixel openings, a plurality of second pixel openings and a plurality of third pixel openings. The first pixel openings are filled with red quantum dot material, and the second pixel openings are filled with green quantum dot material. The sapphire substrate is on the opaque substrate. A first surface of the sapphire substrate that faces the opaque substrate has a plurality of first arc surfaces corresponding to the first pixel openings, a plurality of second arc surfaces corresponding to the second pixel openings, and a plurality of third arc surfaces corresponding to the third pixel openings.

公开(公告)号：US20170104074A1

公开(公告)日：2017-04-13

申请号：US14951512

申请日：2015-11-25

申请人： Industrial Technology Research Institute

发明人： Wei-Hung Kuo ,  Suh-Fang Lin ,  Kun-Fong Lin ,  Chia-Lung Tsai

IPC分类号： H01L29/20 ,  H01L29/34 ,  H01L29/45

CPC分类号： H01L29/2003 ,  H01L29/34 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/778 ,  H01L31/0224 ,  H01L31/02363 ,  H01L31/1035 ,  H01L31/1856 ,  H01L33/16 ,  H01L33/30 ,  H01L33/382 ,  Y02E10/544

摘要： In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.

公开(公告)号：US20130168687A1

公开(公告)日：2013-07-04

申请号：US13686935

申请日：2012-11-28

申请人： Industrial Technology Research Institute

发明人： Wei-Hung Kuo ,  Suh-Fang Lin ,  Rong Xuan

IPC分类号： H01L29/20 ,  H01L29/778

CPC分类号： H01L29/2003 ,  H01L21/28264 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/452 ,  H01L29/778 ,  H01L29/7786

摘要： Provided is an enhancement mode GaN-based transistor device including an epitaxial stacked layer disposed on a substrate; a source layer and a drain layer disposed on a surface of the epitaxial stacked layer; a p-type metal oxide layer disposed between the source layer and the drain layer; and a gate layer disposed on the p-type metal oxide layer. Besides, the p-type metal oxide layer includes a body part disposed on the surface of the epitaxial stacked layer, and a plurality of extension parts connecting the body part and extending into the epitaxial stacked layer. With such structure, the enhancement mode GaN-based transistor device can effectively suppress generation of the gate leakage current.

摘要翻译： 提供了一种增强型GaN基晶体管器件，其包括设置在衬底上的外延层叠层; 设置在所述外延层叠层的表面上的源极层和漏极层; 设置在源极层和漏极层之间的p型金属氧化物层; 以及设置在p型金属氧化物层上的栅极层。 此外，p型金属氧化物层包括设置在外延层叠层的表面上的主体部分和连接主体部分并延伸到外延层叠层中的多个延伸部分。 利用这种结构，增强型GaN基晶体管器件可以有效地抑制栅极漏电流的产生。