公开(公告)号：US20240004474A1

公开(公告)日：2024-01-04

申请号：US18343760

申请日：2023-06-29

申请人： Industrial Technology Research Institute

发明人： Chen-Tsai Yang ,  Heng-Yin Chen ,  Wan-Chen Yang ,  Jui-Chang Chuang ,  Hung-Hsien Ko ,  Min-Hsiung Liang ,  Chih-Cheng Cheng

IPC分类号： G06F3/01 ,  H10N30/20 ,  H10N30/88 ,  H10N30/80

CPC分类号： G06F3/016 ,  H10N30/20 ,  H10N30/88 ,  H10N30/802

摘要： A film deformation element includes a first stack and a second stack. The first stack includes a first passivation layer, a first substrate, a first metal layer and a first dielectric layer. The first substrate is disposed on the first passivation layer. The first metal layer is disposed on the first substrate. The first dielectric layer is disposed on the first metal layer. The second stack is bonded to the first stack, to form a sealing space. The second stack includes a second passivation layer, a second substrate, a second metal layer and a second dielectric layer. The second dielectric layer is disposed on and faces the first dielectric layer. The second metal layer is disposed on the second dielectric layer. The second substrate is disposed on the second metal layer. The second passivation layer is disposed on the second substrate.