公开(公告)号：US20160122866A1

公开(公告)日：2016-05-05

申请号：US14851472

申请日：2015-09-11

Applicant: Industrial Technology Research Institute

Inventor： FU-CHING TUNG ,  CHING-CHIUN WANG ,  SHIH-HSIANG LAI

IPC: C23C14/54 ,  C23C14/28

CPC classification number: C23C14/542 ,  C23C14/24 ,  C23C14/28

Abstract: An evaporation system and an evaporation method are disclosed, which are adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, the evaporation system comprises an evaporation material and an evaporation source plate, whereas the evaporation source plate is arranged to be heated by a heater so as to evaporate the evaporation material form its solid state into its gaseous state, and then enable the gaseous state evaporation material to travel passing through holes by the use of a shutter device so as to spread toward the surface of the evaporation target substrate for forming a film thereon. In addition, the evaporation system further comprises a transmission device, which is to be used for controlling the opening/closing of the holes of the shutter device.

Abstract translation: 公开了一种蒸发系统和蒸发方法，其适于在蒸发对象基板的表面上进行蒸发处理。 在一个实施例中，蒸发系统包括蒸发材料和蒸发源板，而蒸发源板被布置成被加热器加热，以使蒸发材料从其固态蒸发成其气态，然后使能 气态蒸发材料通过使用快门装置行进通过孔，以朝向蒸发对象基板的表面扩散以在其上形成膜。 此外，蒸发系统还包括用于控制快门装置的孔的打开/关闭的传动装置。

公开(公告)号：US20150044851A1

公开(公告)日：2015-02-12

申请号：US14521422

申请日：2014-10-22

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： HENG-YUAN LEE ,  PANG-SHIU CHEN ,  TAI-YUAN WU ,  CHING-CHIUN WANG

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1658

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract translation: 提供了一种电阻随机存取存储器及其制造方法。 该方法包括在基板上形成底部电极; 在底部电极上形成金属氧化物层; 在金属氧化物层上形成氧原子吸气层; 在氧原子吸气层上形成第一顶电极子层; 在所述第一顶部电极子层上形成第二顶部电极子层，其中所述第一顶部电极子层和所述第二顶部电极子层包括顶部电极; 并且对金属氧化物层和氧原子吸气层进行热处理，驱动金属氧化物层的氧原子迁移到氧原子吸气层中并与氧原子吸气层反应，导致金属氧化物层内的多个氧空位 。

公开(公告)号：US20130119343A1

公开(公告)日：2013-05-16

申请号：US13723009

申请日：2012-12-20

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： HENG-YUAN LEE ,  PANG-SHIU CHEN ,  TAI-YUAN WU ,  CHING-CHIUN WANG

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1658

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.