公开(公告)号：US20150044851A1

公开(公告)日：2015-02-12

申请号：US14521422

申请日：2014-10-22

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： HENG-YUAN LEE ,  PANG-SHIU CHEN ,  TAI-YUAN WU ,  CHING-CHIUN WANG

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1658

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract translation: 提供了一种电阻随机存取存储器及其制造方法。 该方法包括在基板上形成底部电极; 在底部电极上形成金属氧化物层; 在金属氧化物层上形成氧原子吸气层; 在氧原子吸气层上形成第一顶电极子层; 在所述第一顶部电极子层上形成第二顶部电极子层，其中所述第一顶部电极子层和所述第二顶部电极子层包括顶部电极; 并且对金属氧化物层和氧原子吸气层进行热处理，驱动金属氧化物层的氧原子迁移到氧原子吸气层中并与氧原子吸气层反应，导致金属氧化物层内的多个氧空位 。

公开(公告)号：US20130119343A1

公开(公告)日：2013-05-16

申请号：US13723009

申请日：2012-12-20

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： HENG-YUAN LEE ,  PANG-SHIU CHEN ,  TAI-YUAN WU ,  CHING-CHIUN WANG

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1658

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.