公开(公告)号：US08748252B1

公开(公告)日：2014-06-10

申请号：US13684869

申请日：2012-11-26

Applicant: International Business Machines Corporation

Inventor： Effendi Leobandung ,  William Cote ,  Laertis Economikos ,  Young-Hee Kim ,  Dae-Gyu Park ,  Theodorus Eduardus Standaert ,  Kenneth Jay Stein ,  YS Suh ,  Min Yang

IPC: H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/28008 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Methods of fabricating replacement metal gate transistors using bi-layer a hardmask are disclosed. By utilizing a bi-layer hardmask comprised of a first layer of nitride, followed by a second layer of oxide, the topography issues caused by transition regions of gates are mitigated, which simplifies downstream processing steps and improves yield.

Abstract translation: 公开了使用双层硬掩模制造替代金属栅极晶体管的方法。 通过利用由第一层氮化物构成的双层硬掩模，随后是第二层氧化物，减轻了由栅极的过渡区域引起的形貌问题，这简化了下游处理步骤并提高了产量。

公开(公告)号：US20140148003A1

公开(公告)日：2014-05-29

申请号：US13684869

申请日：2012-11-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Effendi Leobandung ,  William Cote ,  Laertis Economikos ,  Young-Hee Kim ,  Dae-Gyu Park ,  Theodorus Eduardus Standaert ,  Kenneth Jay Stein ,  YS Suh ,  Min Yang

IPC: H01L21/28

CPC classification number: H01L29/66545 ,  H01L21/28008 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Methods of fabricating replacement metal gate transistors using bi-layer a hardmask are disclosed. By utilizing a bi-layer hardmask comprised of a first layer of nitride, followed by a second layer of oxide, the topography issues caused by transition regions of gates are mitigated, which simplifies downstream processing steps and improves yield.

Abstract translation: 公开了使用双层硬掩模制造替代金属栅极晶体管的方法。 通过利用由第一层氮化物构成的双层硬掩模，随后是第二层氧化物，减轻了由栅极的过渡区域引起的形貌问题，这简化了下游处理步骤并提高了产量。