Invention Application
- Patent Title: REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK
- Patent Title (中): 使用双层HARDMASK更换金属栅极晶体管
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Application No.: US13684869Application Date: 2012-11-26
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Publication No.: US20140148003A1Publication Date: 2014-05-29
- Inventor: Effendi Leobandung , William Cote , Laertis Economikos , Young-Hee Kim , Dae-Gyu Park , Theodorus Eduardus Standaert , Kenneth Jay Stein , YS Suh , Min Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
Methods of fabricating replacement metal gate transistors using bi-layer a hardmask are disclosed. By utilizing a bi-layer hardmask comprised of a first layer of nitride, followed by a second layer of oxide, the topography issues caused by transition regions of gates are mitigated, which simplifies downstream processing steps and improves yield.
Public/Granted literature
- US08748252B1 Replacement metal gate transistors using bi-layer hardmask Public/Granted day:2014-06-10
Information query
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