Abstract:
A single-ended low-swing power-savings mechanism is provided. The mechanism comprises a precharge device that turns off in an evaluation phase and a first biasing device is always on. Within the mechanism, a strength of a keeper device is changed to a first level in response to an input of the second biasing device being at a first voltage level. Within the mechanism the strength of the keeper device is changed to a second level in response to the input of the second biasing device being at a second voltage level. Responsive to receiving a (precharged voltage level read data line signal, a precharged voltage level of the first node falls faster when the keeper device is weakened to a first level. The keeper device turns on in response to receiving a LOW signal and pulls up the voltage at the first node so that a HIGH signal is output.
Abstract:
A computer-implemented method for memory macro disablement in a cache memory includes identifying a defective portion of a memory macro of a cache memory bank. The method includes iteratively testing each line of the memory macro, the testing including attempting at least one write operation at each line of the memory macro. The method further includes determining that an error occurred during the testing. The method further includes, in response to determining the memory macro as being defective, disabling write operations for a portion of the cache memory bank that includes the memory macro by generating a logical mask that includes at least bits comprising a compartment bit, and read address bits.
Abstract:
A method of operation of a high-voltage word-line driver circuit for a memory device prevents any single transistor of the driver from having the full power supply voltage from which the word-line output signal is generated, from being applied across any single transistor of the word-line driver circuit. A pair of cascode devices are connected in series with the pull-down device of the input stage and a pull-up device of the input stage, and biased using reference voltages to control the maximum voltage drop across the pull-down device when the pull-down device is off and the pull-up device is active, and to control the maximum voltage drop across the pull-up device when the pull-down device is active. The output stage also includes cascode devices that protect the output pull-down and pull-up devices, and the reference voltages that bias the input and output cascode pairs may be the same reference voltages.
Abstract:
A computer-implemented method includes receiving a memory address of a memory location in a memory that has been identified to be failing. The method further includes determining that the memory location is from a particular portion of the memory. The method further includes, in response to a number of memory locations that are identified to be failing from the particular portion of the memory being below a predetermined threshold, logging the memory address in a set of failing address registers associated with the memory, otherwise, skipping the logging of the memory address in the failing address registers.
Abstract:
Techniques for negative voltage generation for a computer memory are described herein. An aspect includes enabling a first negative word line voltage (VWL) clock generator. Another aspect includes providing, by the first VWL clock generator, based on a clock signal, a first pump clock signal to a first VWL pump, and a second pump clock signal to a second VWL pump. Another aspect includes generating a VWL based on the first VWL pump and the second VWL pump, wherein the VWL is provided to a word line driver of a computer memory module. Another aspect includes comparing the VWL to a VWL reference voltage. Another aspect includes, based on the VWL being below the VWL reference voltage, disabling the first VWL clock generator, wherein the first VWL pump and the second VWL pump are disabled based on disabling the first VWL clock generator.
Abstract:
A driver circuit and associated techniques include managing voltage driving an electronic device. An input signal having a first voltage level is received. Processes may perform level shifting of the first voltage level to a second voltage level. The second voltage level may be clamped, for instance, but a diode circuit. The second output voltage level may be programmable, as may be current and resistance levels of the driver circuit.
Abstract:
A driver circuit and associated techniques include managing voltage driving an electronic device. An input signal having a first voltage level is received. Processes may perform level shifting of the first voltage level to a second voltage level. The second voltage level may be clamped, for instance, but a diode circuit. The second output voltage level may be programmable, as may be current and resistance levels of the driver circuit.
Abstract:
A single-ended low-swing power-savings mechanism is provided. The mechanism comprises a precharge device that turns off in an evaluation phase and a first biasing device is always on. Within the mechanism, a strength of a keeper device is changed to a first level in response to an input of the second biasing device being at a first voltage level. Within the mechanism the strength of the keeper device is changed to a second level in response to the input of the second biasing device being at a second voltage level. Responsive to receiving a (precharged voltage level read data line signal, a precharged voltage level of the first node falls faster when the keeper device is weakened to a first level. The keeper device turns on in response to receiving a LOW signal and pulls up the voltage at the first node so that a HIGH signal is output.
Abstract:
A method for testing a circuit includes performing, by a test engine, a test of a memory element of the circuit, the test accesses a memory location in the memory element, the memory location is identified by an address, and the memory location is accessed via a first port associated with a first port select bit. The method further includes, in response to detecting a failure associated with the memory location, determining an existing entry for the address in a failed address register, and determining that the existing entry in the failed address register is associated with a second port select bit, distinct from the first port select bit. The method further includes, in response to the second port select bit being distinct from the first port select bit, setting a multi-port failure flag for the memory element that is being tested.
Abstract:
A method includes receiving, at a bitline-mux driver circuit, a subarray activation (SUBA) signal and a delay signal. The bitline-mux driver circuit includes a header circuit operable to output a driver voltage to a plurality of driver circuits. The driver voltage is boosted through a voltage divider with diode header circuit based on the SUBA signal to set the driver voltage to a value above a standard supply voltage (VDD) and between a voltage bitline high (VBLH) level and a high voltage (VPP) level. The VPP level exceeds a maximum allowed voltage (VMAX) level of the driver circuits. A master wordline output of the driver circuits is driven to select a bitline mux of a computer memory module based on an address input signal, the delay signal, and the driver voltage.