公开(公告)号：US12199017B2

公开(公告)日：2025-01-14

申请号：US17618881

申请日：2021-11-12

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Xiaoyan Zhang ,  Jiawei Wen ,  Yulong Zhang ,  Jinhan Zhang ,  Ronghui Hao ,  Xingjun Li ,  King Yuen Wong

IPC: H01L23/482 ,  H01L23/528 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer and includes a first pattern and a second pattern which are spaced apart from each other. The source pad is immediately above the first metal layer, the second metal layer, and the first pattern of the third metal layer and is electrically coupled with the nitride-based transistor. The drain pad is immediately above the first metal layer, the second metal layer, and the second pattern of the third metal layer and is electrically coupled with the nitride-based transistor.

公开(公告)号：US20220199817A1

公开(公告)日：2022-06-23

申请号：US17144177

申请日：2021-01-08

Applicant: Innoscience (Suzhou) Technology Co., Ltd.

Inventor： Ronghui Hao ,  Fu Chen ,  Chuan He ,  King Yuen Wong

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/66 ,  H01L29/40

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a first S/D electrode, and a second S/D electrode. The buffer includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first nitride-based semiconductor layer is disposed over the buffer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The gate electrode and the first and second S/D electrodes are disposed over the second nitride-based semiconductor layer. Profiles of the first and second S/D electrodes are asymmetric with respect to the gate electrode, such that a bottom surface of the first S/D electrode is deeper than that of the second S/D electrode with respect to the gate electrode.

公开(公告)号：US12159931B2

公开(公告)日：2024-12-03

申请号：US17617913

申请日：2021-10-22

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Qingyuan He ,  Ronghui Hao ,  Fu Chen ,  Jinhan Zhang ,  King Yuen Wong

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/872

Abstract: A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.

公开(公告)号：US11888054B2

公开(公告)日：2024-01-30

申请号：US17144176

申请日：2021-01-08

Applicant: Innoscience (Suzhou) Technology Co., Ltd.

Inventor： Ronghui Hao ,  Fu Chen ,  Chuan He ,  King Yuen Wong

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L29/207 ,  H01L29/20 ,  H01L29/417 ,  H01L29/40 ,  H01L29/205 ,  H01L29/45

CPC classification number: H01L29/7787 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/205 ,  H01L29/452

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. A first nitride-based semiconductor layer is disposed over the buffer. A shield layer is disposed between the buffer and the first nitride-based semiconductor layer and includes a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, in which the first isolation compound is made of at least one two-dimensional material which includes at least one metal element. A second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The pair of S/D electrodes and the gate electrode are disposed over the second nitride-based semiconductor layer.

公开(公告)号：US12148801B2

公开(公告)日：2024-11-19

申请号：US17617935

申请日：2021-11-09

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Chuan He ,  Xiaoqing Pu ,  Ronghui Hao ,  King Yuen Wong

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode, and a third nitride-based semiconductor layer. The first nitride-based semiconductor layer has at least one trench. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and spaced apart from the trench. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed above the second nitride-based semiconductor layer and between the source and drain electrodes, so as to at least define a drift region between the gate electrode and the drain electrode and overlaps with the trench. The third nitride-based semiconductor layer is at least disposed in the trench and extends upward from the trench to make contact with the second nitride-based semiconductor layer.

公开(公告)号：US12074202B2

公开(公告)日：2024-08-27

申请号：US17616202

申请日：2021-11-09

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Qingyuan He ,  Ronghui Hao ,  Fu Chen ,  Jinhan Zhang ,  King Yuen Wong

IPC: H01L29/20 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872

CPC classification number: H01L29/2003 ,  H01L29/1066 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a gate electrode, and a drain structure. The drain structure includes a first doped nitride-based semiconductor layer, an ohmic contact electrode, and a conductive layer. The first doped nitride-based semiconductor layer is in contact with the second nitride-based semiconductor layer to form a first contact interface. The ohmic contact electrode is in contact with the second nitride-based semiconductor layer to form a second contact interface. The conductive layer includes metal and in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The conductive layer is connected to the first doped nitride-based semiconductor layer and the ohmic contact electrode, and the ohmic contact interface is farther away from the gate electrode than the first contact interface and the second contact interface.

公开(公告)号：US12027615B2

公开(公告)日：2024-07-02

申请号：US17144175

申请日：2021-01-08

Applicant: Innoscience (Suzhou) Technology Co., Ltd.

Inventor： Ronghui Hao ,  Fu Chen ,  Chuan He ,  King Yuen Wong

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/207 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/205 ,  H01L29/45

CPC classification number: H01L29/7787 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/205 ,  H01L29/452

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, a pair of S/D electrodes, and a gate electrode. The first nitride-based semiconductor layer is disposed over the buffer and forms a first interface with the buffer. The shield layer includes a first isolation compound and is interposed between the buffer and the first nitride-based semiconductor layer. The first isolation compound has a bandgap greater than a bandgap of the buffer and greater than a bandgap of the first nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.

公开(公告)号：US11929429B2

公开(公告)日：2024-03-12

申请号：US17433623

申请日：2021-06-02

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Ronghui Hao ,  Fu Chen ,  King Yuen Wong

IPC: H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66431

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode and a single field plate. The source electrode, the drain electrode, and the gate electrode are disposed on the second nitride-based semiconductor layer. The gate electrode is between the source and drain electrodes. The single field plate is disposed over the gate electrode and extends toward the drain electrode. The field plate has a first end part, a second end part and the central part. The first and the second end parts are located at substantially the same height. Portions of the central part are in a position lower than that of the first and second end parts, and the first end part extends laterally in a length greater than a width of the gate electrode.

公开(公告)号：US12166102B2

公开(公告)日：2024-12-10

申请号：US17258462

申请日：2020-12-18

Applicant: Innoscience (Suzhou) Technology Co., Ltd.

Inventor： Ronghui Hao ,  Fu Chen ,  Chuan He ,  King Yuen Wong

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/417 ,  H01L29/778

Abstract: A nitride-based semiconductor device includes a substrate, a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a S/D electrode, a second S/D electrode, and a gate electrode. The buffer is disposed over the substrate and includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first and second nitride-based semiconductor layers are disposed over the buffer. The first S/D electrode is disposed over the second nitride-based semiconductor layer, in which the first S/D electrode extends downward to a position lower than the first nitride-based semiconductor layer, so as to form at least one first interface with the top-most portion of the buffer, making contact with the at least one layer of the nitride-based semiconductor compound. The second S/D electrode and the gate electrode are disposed over the second nitride-based semiconductor layer.

公开(公告)号：US12154968B2

公开(公告)日：2024-11-26

申请号：US17417122

申请日：2021-02-25

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Ronghui Hao ,  Chuan He ,  King Yuen Wong

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/778

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode a first strain-compensating layer, and a first protection layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed between the source and drain electrodes. The first strain-compensating layer is disposed above the second nitride-based semiconductor layer and between the drain and gate electrodes. The first protection layer covers the first strain-compensating layer to form a first interface, in which a vertical distance between the first interface and the second nitride-based semiconductor layer increases along a direction pointing toward the drain electrode from the gate electrode.