公开(公告)号：US20240030335A1

公开(公告)日：2024-01-25

申请号：US17621684

申请日：2021-11-12

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Ronghui HAO ,  Chuan HE ,  Qingyuan HE ,  King Yuen WONG

IPC: H01L29/778 ,  H01L29/207 ,  H01L29/20 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7787 ,  H01L29/207 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/41775

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a doped nitride-based semiconductor layer, a plurality of negatively-charged ions, a source electrode, and a drain electrode. The negatively-charged ions are selected from a highly electronegative group and distributed within a plurality of depletion regions which extend downward from the doped nitride-based semiconductor layer and are located beneath the gate electrode. Any pair of the adjacent depletion regions are separated from each other. The source electrode is disposed above the second nitride-based semiconductor layer and spaced apart from the depletion regions. The drain electrode is disposed above the second nitride-based semiconductor layer and spaced apart from the depletion regions.

公开(公告)号：US20230352540A1

公开(公告)日：2023-11-02

申请号：US17616202

申请日：2021-11-09

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Qingyuan HE ,  Ronghui HAO ,  Fu CHEN ,  Jinhan ZHANG ,  King Yuen WONG

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/47 ,  H01L29/66 ,  H01L29/45 ,  H01L29/872 ,  H01L29/10

CPC classification number: H01L29/2003 ,  H01L29/7786 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/452 ,  H01L29/872 ,  H01L29/1066

Abstract: A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a gate electrode, and a drain structure. The drain structure includes a first doped nitride-based semiconductor layer, an ohmic contact electrode, and a conductive layer. The first doped nitride-based semiconductor layer is in contact with the second nitride-based semiconductor layer to form a first contact interface. The ohmic contact electrode is in contact with the second nitride-based semiconductor layer to form a second contact interface. The conductive layer includes metal and in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The conductive layer is connected to the first doped nitride-based semiconductor layer and the ohmic contact electrode, and the ohmic contact interface is farther away from the gate electrode than the first contact interface and the second contact interface.

公开(公告)号：US20240063218A1

公开(公告)日：2024-02-22

申请号：US17618897

申请日：2021-11-12

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Qingyuan HE ,  Ronghui HAO ,  Fu CHEN ,  Jinhan ZHANG ,  King Yuen WONG

IPC: H01L27/085 ,  H01L21/8252 ,  H01L23/522

CPC classification number: H01L27/085 ,  H01L21/8252 ,  H01L23/5221

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, and a second nitride-based transistor. The first nitride-based transistor applies the 2DEG region as a channel thereof and comprising a first drain electrode that makes contact with the second nitride-based semiconductor layer to form a first Schottky diode with the second nitride-based semiconductor layer. The second nitride-based transistor applies the 2DEG region as a channel thereof and includes a second drain electrode that makes contact with the second nitride-based semiconductor layer to form a second Schottky diode with the second nitride-based semiconductor layer, such that the first Schottky diode and the second Schottky diode are connected to the same node.

公开(公告)号：US20240014305A1

公开(公告)日：2024-01-11

申请号：US17617913

申请日：2021-10-22

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Qingyuan HE ,  Ronghui HAO ,  Fu CHEN ,  Jinhan ZHANG ,  King Yuen WONG

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/872

CPC classification number: H01L29/7786 ,  H01L29/66462 ,  H01L29/2003 ,  H01L29/872

Abstract: A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.

公开(公告)号：US20220376074A1

公开(公告)日：2022-11-24

申请号：US17417120

申请日：2021-05-03

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Ronghui HAO ,  Qingyuan HE ,  Fu CHEN ,  King Yuen WONG

IPC: H01L29/47 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/40 ,  H01L29/66

Abstract: A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, a doped III-V semiconductor layer, a gate electrode, a first and second source/drain (S/D) electrodes. The doped III-V semiconductor layer is disposed over the second nitride-based semiconductor layer and has first and second current-leakage barrier portions which extends downward from atop surface of the doped III-V semiconductor layer. The gate electrode is disposed above the doped III-V semiconductor layer, in which the gate electrode has a pair of opposite edges between the first and second current-leakage barrier portions. One of the edges of the gate electrode coincides with the first current-leakage barrier portion. The first current-leakage barrier portion is located between the first S/D electrode and the gate electrode. The second current-leakage barrier portion is located between the second S/D electrode and the gate electrode.