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1.发明申请MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION AND METHOD OF FABRICATING THE SAME 有权具有全面磁化的磁性隧道连接装置及其制造方法公开(公告)号：US20140361391A1
公开(公告)日：2014-12-11
申请号：US14181736
申请日：2014-02-17
Applicant: Industrial Technology Research Institute
Inventor： Kuei-Hung Shen , Shan-Yi Yang , Yung-Hung Wang
Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.
Abstract translation: 提供了具有包括参考层，隧道介电层，自由层和覆盖层的垂直磁化的磁性隧道结装置。 隧道介电层覆盖在参考层上。 自由层覆盖在隧道介电层上。 封盖层由镁，铝和氧组成，并设置在自由层上。
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Patent Agency Ranking
公开(公告)号：US20140048896A1
公开(公告)日：2014-02-20
申请号：US13901412
申请日：2013-05-23
Applicant: Industrial Technology Research Institute
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
CPC classification number: H01L43/02 , G01R33/091 , G01R33/098 , G11B5/3909 , G11C11/15 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.
Abstract translation: 磁隧道结（MTJ）装置包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，形成在隧道绝缘层上的自由层和形成在自由层上的磁场提供层 。 每个参考层和自由层中的磁化方向基本上垂直于表面。 磁场提供层被配置为在自由层中提供横向磁场，横向磁场基本上平行于表面。
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公开(公告)号：US09231191B2
公开(公告)日：2016-01-05
申请号：US13901412
申请日：2013-05-23
Applicant: Industrial Technology Research Institute
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
CPC classification number: H01L43/02 , G01R33/091 , G01R33/098 , G11B5/3909 , G11C11/15 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.
Abstract translation: 磁隧道结（MTJ）装置包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，形成在隧道绝缘层上的自由层和形成在自由层上的磁场提供层 。 每个参考层和自由层中的磁化方向基本上垂直于表面。 磁场提供层被配置为在自由层中提供横向磁场，横向磁场基本上平行于表面。
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公开(公告)号：US20140001586A1
公开(公告)日：2014-01-02
申请号：US13751158
申请日：2013-01-28
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Kuei-Hung Shen , Shan-Yi Yang
IPC: H01L43/10
Abstract: Provided is a perpendicularly magnetized magnetic tunnel junction device including at least one multi-layer. The multi-layer includes a first metal oxide layer, a first ferromagnetic layer, a first modified layer and a second ferromagnetic layer. The first ferromagnetic layer is located on the first metal oxide layer, and the second ferromagnetic layer is located on the first ferromagnetic layer. The first modified layer is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.
Abstract translation: 提供了包括至少一个多层的垂直磁化的磁隧道结装置。 多层包括第一金属氧化物层，第一铁磁层，第一修饰层和第二铁磁层。 第一铁磁层位于第一金属氧化物层上，第二铁磁层位于第一铁磁层上。 第一改性层夹在第一铁磁层和第二铁磁层之间。
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5.发明授权公开(公告)号：US09172032B2
公开(公告)日：2015-10-27
申请号：US14181736
申请日：2014-02-17
Applicant: Industrial Technology Research Institute
Inventor： Kuei-Hung Shen , Shan-Yi Yang , Yung-Hung Wang
Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.
Abstract translation: 提供了具有包括参考层，隧道介电层，自由层和覆盖层的垂直磁化的磁性隧道结装置。 隧道介电层覆盖在参考层上。 自由层覆盖在隧道介电层上。 封盖层由镁，铝和氧组成，并设置在自由层上。
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公开(公告)号：US20140048895A1
公开(公告)日：2014-02-20
申请号：US13839394
申请日：2013-03-15
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, and a free layer formed over the tunnel insulating layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. A dimension of the reference layer in a horizontal direction substantially parallel to the surface is larger than a dimension of the free layer in the horizontal direction.
Abstract translation: 磁性隧道结（MTJ）器件包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，以及形成在隧道绝缘层上的自由层。 每个参考层和自由层中的磁化方向基本上垂直于表面。 大致平行于表面的水平方向上的参考层的尺寸大于自由层在水平方向上的尺寸。
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