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公开(公告)号：US20140048896A1
公开(公告)日：2014-02-20
申请号：US13901412
申请日：2013-05-23
Applicant: Industrial Technology Research Institute
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
CPC classification number: H01L43/02 , G01R33/091 , G01R33/098 , G11B5/3909 , G11C11/15 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.
Abstract translation: 磁隧道结（MTJ）装置包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，形成在隧道绝缘层上的自由层和形成在自由层上的磁场提供层 。 每个参考层和自由层中的磁化方向基本上垂直于表面。 磁场提供层被配置为在自由层中提供横向磁场，横向磁场基本上平行于表面。
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公开(公告)号：US20140048895A1
公开(公告)日：2014-02-20
申请号：US13839394
申请日：2013-03-15
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, and a free layer formed over the tunnel insulating layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. A dimension of the reference layer in a horizontal direction substantially parallel to the surface is larger than a dimension of the free layer in the horizontal direction.
Abstract translation: 磁性隧道结（MTJ）器件包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，以及形成在隧道绝缘层上的自由层。 每个参考层和自由层中的磁化方向基本上垂直于表面。 大致平行于表面的水平方向上的参考层的尺寸大于自由层在水平方向上的尺寸。
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公开(公告)号：US09231191B2
公开(公告)日：2016-01-05
申请号：US13901412
申请日：2013-05-23
Applicant: Industrial Technology Research Institute
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
CPC classification number: H01L43/02 , G01R33/091 , G01R33/098 , G11B5/3909 , G11C11/15 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.
Abstract translation: 磁隧道结（MTJ）装置包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，形成在隧道绝缘层上的自由层和形成在自由层上的磁场提供层 。 每个参考层和自由层中的磁化方向基本上垂直于表面。 磁场提供层被配置为在自由层中提供横向磁场，横向磁场基本上平行于表面。
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