Abstract:
An erbium-doped optical fiber includes a fiber core, where the fiber core includes erbium ions, aluminum ions, phosphorus ions, lanthanum ions, antimony ions, and silicon ions. A mass percentage of the erbium ions ranges from 0.25 percentage by weight (wt %) to 0.6 wt %, a mass percentage of the aluminum ions ranges from 3 wt % to 6 wt %, a mass percentage of the phosphorus ions ranges from 7 wt % to 16 wt %, a mass percentage of lanthanum ions ranges from 0.5 wt % to 1.2 wt %, a mass percentage of antimony ions ranges from 1 wt % to 5 wt %, and a mass percentage of silicon ions is greater than 60 wt %.
Abstract:
A transverse magnetic mode dielectric resonator includes a housing with a top opening, a cover disposed on an opening side of the housing, a cavity body enclosed by the cover and the housing, an inner wall of the cavity body electrically conductive, a resonant dielectric rod disposed in the cavity body, a cavity disposed inside the resonant dielectric rod, a tuning part disposed on the cover, one end of the tuning part stretched into the cavity and capable of moving up and down relative to the cavity, two ends of the resonant dielectric rod respectively soldered with the cover and a baseplate of the housing, where a part that is of the cover and that is soldered with the resonant dielectric rod is made of elastic material, and a part that is of the baseplate and that is soldered with the resonant dielectric rod is made of elastic material.
Abstract:
The present disclosure relates to transverse magnetic wave (TM) mode filters and methods for manufacturing a TM mode filter. One example TM mode filter includes a filter body, a dielectric, and a transition layer, the filter body including a filter cavity and a cover, and having hollow confined space, the dielectric located in the hollow confined space, and the transition layer configured to connect the dielectric and the filter body. A coefficient of thermal expansion (CTE) of the transition layer is between a CTE of the filter body and a CTE of the dielectric.
Abstract:
An embodiment of the present invention provides a scheelite microwave dielectric ceramic material. For example, a structure expression of the scheelite microwave dielectric ceramic material can be Bi(V1-xInx/3Mo2x/3)MoO4. In this embodiment, 0.06≦x≦0.12 An embodiment of the present invention further provides a method for preparing a scheelite microwave dielectric ceramic material.
Abstract:
An embodiment of the present invention provides a scheelite microwave dielectric ceramic material. For example, a structure expression of the scheelite microwave dielectric ceramic material can be Bi(V1-xInx/3Mo2x/3)MoO4. In this embodiment, 0.06≦x≦0.12 An embodiment of the present invention further provides a method for preparing a scheelite microwave dielectric ceramic material.