公开(公告)号：US10916626B2

公开(公告)日：2021-02-09

申请号：US16235339

申请日：2018-12-28

Applicant: Hong Kong Applied Science and Technology Research Institute Co., Ltd.

Inventor： Shu Kin Yau ,  Siu Wai Wong

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A silicon carbide diode that contains a silicon carbide substrate, a silicon carbide layer on top of the silicon carbide substrate, two first lower barrier metal portions disposed on the silicon carbide layer and separated from each other along a top surface of the silicon carbide layer, and a first higher barrier metal portion connected to the two lower barrier metal portions. The silicon carbide layer is thinner and having lower doping than the silicon carbide substrate. The first higher barrier metal portion is located between the two first lower barrier metal portions on the silicon carbide layer along a direction of the top surface of the silicon carbide layer. By reducing the leakage current at the junction barrier, the reverse breakdown voltage of the silicon carbide diode is significantly improved.

公开(公告)号：US20200212177A1

公开(公告)日：2020-07-02

申请号：US16235339

申请日：2018-12-28

Applicant: Hong Kong Applied Science and Technology Research Institute Co., Ltd.

Inventor： Shu Kin Yau ,  Siu Wai Wong

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/872 ,  H01L29/66

Abstract: A silicon carbide diode that contains a silicon carbide substrate, a silicon carbide layer on top of the silicon carbide substrate, two first lower barrier metal portions disposed on the silicon carbide layer and separated from each other along a top surface of the silicon carbide layer, and a first higher barrier metal portion connected to the two lower barrier metal portions. The silicon carbide layer is thinner and having lower doping than the silicon carbide substrate. The first higher barrier metal portion is located between the two first lower barrier metal portions on the silicon carbide layer along a direction of the top surface of the silicon carbide layer. By reducing the leakage current at the junction barrier, the reverse breakdown voltage of the silicon carbide diode is significantly improved.

公开(公告)号：US20190305141A1

公开(公告)日：2019-10-03

申请号：US15936903

申请日：2018-03-27

Applicant: Hong Kong Applied Science and Technology Research Institute Co., Ltd.

Inventor： Siu Wai Wong ,  Shu Kin Yau

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/45 ,  H01L29/417 ,  H01L21/04 ,  H01L29/66 ,  H01L23/31 ,  H01L21/02 ,  H01L29/06 ,  H01L27/08

Abstract: A silicon carbide chip array containing a silicon carbide substrate; a silicon carbide layer on top of the silicon carbide substrate; a first metal contact connected to the silicon carbide substrate; and two second metal contacts connected to the first portion and the second portion respectively. The silicon carbide layer is thinner and having lower doping than the silicon carbide layer. The silicon carbide layer includes a first portion and a second portion which are separate from each other. Each one of the second metal contacts forms a semiconductor device with the first metal contact. At least one of the first and second portions contains a side face which is inclined with respect to the silicon carbide substrate. Such a configuration enhances the breakdown voltage and reduces leakage current of the resultant silicon carbide diode array.

公开(公告)号：US09273407B2

公开(公告)日：2016-03-01

申请号：US14215092

申请日：2014-03-17

Applicant: Hong Kong Applied Science and Technology Research Institute Co. Ltd.

Inventor： Jiye Luo ,  Yaofeng Sun ,  Shu Kin Yau

IPC: C07C217/28 ,  C25D3/38 ,  C07D207/06 ,  C07D211/14

CPC classification number: C25D3/38 ,  C07C217/28 ,  C07D207/06 ,  C07D211/14 ,  C25D7/00

Abstract: This invention relates to a new compound represented by formula (I). Particularly, the new compound is used as an additive in copper electroplating. A chemical structure for the leveler, an electroplating bath containing the same, a method of preparing the additive and a method of electroplating a substrate with the electroplating bath containing the additive are disclosed. The additive compound/molecule of the present invention provides a branched structure at each ends, wherein each of the branches comprises a positively charged nitrogen moiety. The additive compound/molecule is formed by linking the branches having the positive charged nitrogen moieties to the backbone of the additive compound/molecule. This leads to a high charge density novel additive compound/molecule.

Abstract translation: 本发明涉及由式（I）表示的新化合物。 特别地，该新化合物在铜电镀中用作添加剂。 公开了一种用于矫平机的化学结构，含有它的电镀浴，制备该添加剂的方法和一种使用含有该添加剂的电镀浴电镀衬底的方法。 本发明的添加剂化合物/分子在每个末端提供支链结构，其中每个分支包含带正电荷的氮部分。 通过将具有正电荷的氮部分的分支连接到添加剂化合物/分子的主链上而形成添加剂化合物/分子。 这导致高电荷密度的新型添加剂化合物/分子。