公开(公告)号：US10916626B2

公开(公告)日：2021-02-09

申请号：US16235339

申请日：2018-12-28

Applicant: Hong Kong Applied Science and Technology Research Institute Co., Ltd.

Inventor： Shu Kin Yau ,  Siu Wai Wong

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A silicon carbide diode that contains a silicon carbide substrate, a silicon carbide layer on top of the silicon carbide substrate, two first lower barrier metal portions disposed on the silicon carbide layer and separated from each other along a top surface of the silicon carbide layer, and a first higher barrier metal portion connected to the two lower barrier metal portions. The silicon carbide layer is thinner and having lower doping than the silicon carbide substrate. The first higher barrier metal portion is located between the two first lower barrier metal portions on the silicon carbide layer along a direction of the top surface of the silicon carbide layer. By reducing the leakage current at the junction barrier, the reverse breakdown voltage of the silicon carbide diode is significantly improved.

公开(公告)号：US20200212177A1

公开(公告)日：2020-07-02

申请号：US16235339

申请日：2018-12-28

Applicant: Hong Kong Applied Science and Technology Research Institute Co., Ltd.

Inventor： Shu Kin Yau ,  Siu Wai Wong

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/872 ,  H01L29/66

Abstract: A silicon carbide diode that contains a silicon carbide substrate, a silicon carbide layer on top of the silicon carbide substrate, two first lower barrier metal portions disposed on the silicon carbide layer and separated from each other along a top surface of the silicon carbide layer, and a first higher barrier metal portion connected to the two lower barrier metal portions. The silicon carbide layer is thinner and having lower doping than the silicon carbide substrate. The first higher barrier metal portion is located between the two first lower barrier metal portions on the silicon carbide layer along a direction of the top surface of the silicon carbide layer. By reducing the leakage current at the junction barrier, the reverse breakdown voltage of the silicon carbide diode is significantly improved.

公开(公告)号：US20190305141A1

公开(公告)日：2019-10-03

申请号：US15936903

申请日：2018-03-27

Applicant: Hong Kong Applied Science and Technology Research Institute Co., Ltd.

Inventor： Siu Wai Wong ,  Shu Kin Yau

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/45 ,  H01L29/417 ,  H01L21/04 ,  H01L29/66 ,  H01L23/31 ,  H01L21/02 ,  H01L29/06 ,  H01L27/08

Abstract: A silicon carbide chip array containing a silicon carbide substrate; a silicon carbide layer on top of the silicon carbide substrate; a first metal contact connected to the silicon carbide substrate; and two second metal contacts connected to the first portion and the second portion respectively. The silicon carbide layer is thinner and having lower doping than the silicon carbide layer. The silicon carbide layer includes a first portion and a second portion which are separate from each other. Each one of the second metal contacts forms a semiconductor device with the first metal contact. At least one of the first and second portions contains a side face which is inclined with respect to the silicon carbide substrate. Such a configuration enhances the breakdown voltage and reduces leakage current of the resultant silicon carbide diode array.