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    METHOD FOR PRODUCING METAL OXIDE FILM AND METAL OXIDE FILM
    3.
    发明申请
    METHOD FOR PRODUCING METAL OXIDE FILM AND METAL OXIDE FILM 审中-公开
    生产金属氧化物膜和金属氧化物膜的方法

    公开(公告)号：US20150010464A1

    公开(公告)日：2015-01-08

    申请号：US14368954

    申请日：2012-10-24

    申请人： Takahiro Shirahata ,  Hiroyuki Orita ,  Takahiro Hiramatsu

    发明人： Takahiro Shirahata ,  Hiroyuki Orita ,  Takahiro Hiramatsu

    IPC分类号： H01B13/00 ,  H01B1/08 ,  C01G9/02

    CPC分类号： H01B13/003 ,  C01G9/02 ,  C23C18/1216 ,  C23C18/14 ,  H01B1/08 ,  H01B13/0016

    摘要： The present invention includes the steps of (A) forming a solution containing zinc into mist and spraying the solution formed into mist onto a substrate under no vacuum to form a metal oxide film on the substrate, and (B) irradiating the metal oxide film with ultraviolet rays to decrease a resistance of the metal oxide film. Further, the step (B) includes the steps of (B-1) determining, in accordance with a film thickness of the metal oxide film, wavelengths of the ultraviolet rays to be radiated, and (B-2) irradiating the metal oxide film with the ultraviolet rays having the wavelengths determined in said step (B-1).

    摘要翻译： 本发明包括以下步骤：（A）将锌形成为雾状的溶液，将无雾形成的溶液喷雾到基板上，在基板上形成金属氧化物膜，（B）在金属氧化物膜上照射金属氧化物膜， 紫外线以降低金属氧化物膜的电阻。 此外，步骤（B）包括以下步骤：（B-1）根据金属氧化物膜的膜厚度确定要照射的紫外线的波长，和（B-2）照射金属氧化物膜 其中所述紫外线具有在所述步骤（B-1）中确定的波长。

    OXIDE FILM DEPOSITION METHOD AND OXIDE FILM DEPOSITION DEVICE
    4.
    发明申请
    OXIDE FILM DEPOSITION METHOD AND OXIDE FILM DEPOSITION DEVICE 有权
    氧化膜沉积方法和氧化膜沉积装置

    公开(公告)号：US20140141170A1

    公开(公告)日：2014-05-22

    申请号：US14131128

    申请日：2011-09-13

    申请人： Hiroyuki Orita ,  Takahiro Shirahata ,  Takahiro Hiramatsu

    发明人： Hiroyuki Orita ,  Takahiro Shirahata ,  Takahiro Hiramatsu

    IPC分类号： B05D3/04 ,  B05C5/00

    CPC分类号： B05D3/0453 ,  B05C5/00 ,  B05D3/0466 ,  C23C16/18 ,  C23C16/40 ,  C23C16/4486 ,  C23C16/452

    摘要： The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate (100) in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention.

    摘要翻译： 本发明提供一种形成氧化膜的方法，其中始终实现氧化膜的正常形成而不受到大气变化的影响，可以形成具有低电阻的金属氧化物膜，并且高效率 获得成膜。 在本发明中，将含有烷基化合物的原料溶液形成为雾状并喷射到大气中的基板（100）上。 另外，向原料溶液的雾中供给对烷基化合物发挥氧化作用的氧化剂。 通过上述工序，在本发明的基板上形成氧化膜。

    Film formation device
    8.
    发明授权
    Film formation device 有权

    公开(公告)号：US10121931B2

    公开(公告)日：2018-11-06

    申请号：US13990641

    申请日：2011-03-15

    申请人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida

    发明人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida

    IPC分类号： B05B7/04 ,  C23C16/448 ,  C23C16/455 ,  H01L31/18 ,  B05B1/04 ,  B05B7/00

    摘要： The present invention includes a mist generator that generates a mist of a raw material of a film to be formed, and a mist jet nozzle that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body having a hollow portion; a mist supply port that supplies the mist; a spout that jets the mist to the outside; a carrier gas supply port that supplies a carrier gas; and a shower plate having a plurality of holes formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space connected to the carrier gas supply port and a second space connected to the spout. The mist supply port is connected to the second space.

    APPARATUS FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING METAL OXIDE FILM, AND METAL OXIDE FILM
    10.
    发明申请
    APPARATUS FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING METAL OXIDE FILM, AND METAL OXIDE FILM 有权
    用于形成金属氧化物膜的方法，形成金属氧化物膜的方法和金属氧化物膜

    公开(公告)号：US20130039843A1

    公开(公告)日：2013-02-14

    申请号：US13643380

    申请日：2010-06-01

    申请人： Takahiro Shirahata ,  Hiroyuki Orita ,  Akio Yoshida ,  Shizuo Fujita ,  Toshiyuki Kawaharamura

    发明人： Takahiro Shirahata ,  Hiroyuki Orita ,  Akio Yoshida ,  Shizuo Fujita ,  Toshiyuki Kawaharamura

    IPC分类号： C23C16/06 ,  C01B13/00 ,  C23C16/02

    CPC分类号： C23C16/407 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1287 ,  C23C18/1291

    摘要： A film forming apparatus (100) according to one embodiment of the present invention includes a first solution container (5A), a second solution container (5B), a reaction chamber (1), a first path (L1), and a second path (L2). The first solution container (5A) stores a source solution (10) containing metal. The second solution container (5B) stores hydrogen peroxide. A substrate (2) is disposed in the reaction chamber (1), and the reaction chamber (1) includes a heating unit (3) that heats the substrate. The first path (L1) supplies a source solution (11) from the first solution container (5A) to the reaction chamber (1). The second path (L2) supplies hydrogen peroxide from the second solution container (5B) to the reaction chamber (1).

    摘要翻译： 根据本发明的一个实施方案的成膜设备（100）包括第一溶液容器（5A），第二溶液容器（5B），反应室（1），第一路径（L1）和第二路径 （L2）。 第一溶液容器（5A）存储含有金属的源溶液（10）。 第二溶液容器（5B）存储过氧化氢。 基板（2）设置在反应室（1）中，反应室（1）包括加热基板的加热单元（3）。 第一路径（L1）将源解决方案（11）从第一溶液容器（5A）供应到反应室（1）。 第二路径（L2）从第二溶液容器（5B）向反应室（1）供应过氧化氢。