Surface acoustic wave filter and wireless device that employs the same
    1.
    发明申请
    Surface acoustic wave filter and wireless device that employs the same 有权
    表面声波滤波器和采用相同的无线设备

    公开(公告)号:US20050110599A1

    公开(公告)日:2005-05-26

    申请号:US10992116

    申请日:2004-11-19

    摘要: A surface acoustic wave (SAW) filter includes a piezoelectric substrate, a first interdigital transducer (IDT) for input and a second IDT for output that are provided on the piezoelectric substrate, the first IDT and the second IDT being arranged in a propagation direction, and a shield electrode arranged between the first IDT and the second IDT and/or between interconnection lines that connect the first IDT and the second IDT, at least one of the first IDT and the second IDT being of a longitudinal coupling multi-mode type having a balanced operation. Thus, it is possible to suppress a stray capacitance between the first IDT and the second IDT, and thereby to improve the symmetry of balanced operation signals.

    摘要翻译: 表面声波(SAW)滤波器包括压电基片,用于输入的第一指叉式换能器(IDT)和设置在压电基片上的第二输出IDT,第一IDT和第二IDT沿传播方向布置, 以及设置在所述第一IDT和所述第二IDT之间和/或连接所述第一IDT和所述第二IDT的互连线之间的屏蔽电极,所述第一IDT和所述第二IDT中的至少一个是纵向耦合多模式, 平衡的操作。 因此,可以抑制第一IDT和第二IDT之间的杂散电容,从而提高平衡操作信号的对称性。

    Surface acoustic wave filter and wireless device that employs the same
    2.
    发明授权
    Surface acoustic wave filter and wireless device that employs the same 有权
    表面声波滤波器和采用相同的无线设备

    公开(公告)号:US07292122B2

    公开(公告)日:2007-11-06

    申请号:US10992116

    申请日:2004-11-19

    IPC分类号: H03H9/64

    摘要: A surface acoustic wave (SAW) filter includes a piezoelectric substrate, a first interdigital transducer (IDT) for input and a second IDT for output that are provided on the piezoelectric substrate, the first IDT and the second IDT being arranged in a propagation direction, and a shield electrode arranged between the first IDT and the second IDT and/or between interconnection lines that connect the first IDT and the second IDT, at least one of the first IDT and the second IDT being of a longitudinal coupling multi-mode type having a balanced operation. Thus, it is possible to suppress a stray capacitance between the first IDT and the second IDT, and thereby to improve the symmetry of balanced operation signals.

    摘要翻译: 表面声波(SAW)滤波器包括压电基片,用于输入的第一指叉式换能器(IDT)和设置在压电基片上的第二输出IDT,第一IDT和第二IDT沿传播方向布置, 以及设置在所述第一IDT和所述第二IDT之间和/或连接所述第一IDT和所述第二IDT的互连线之间的屏蔽电极,所述第一IDT和所述第二IDT中的至少一个是纵向耦合多模式, 平衡的操作。 因此,可以抑制第一IDT和第二IDT之间的杂散电容,从而提高平衡操作信号的对称性。

    High-nickel austenitic stainless steel resistant to degradation by
neutron irradiation
    4.
    发明授权
    High-nickel austenitic stainless steel resistant to degradation by neutron irradiation 失效
    高镍奥氏体不锈钢耐中子辐射降解

    公开(公告)号:US5976275A

    公开(公告)日:1999-11-02

    申请号:US836519

    申请日:1997-06-05

    摘要: The present invention aims at providing structural materials having a resistance to degradation by neutron irradiation, causing no SCC in an environment of light-water reactors even after subjecting the materials to neutron irradiation of approximately at least 1.times.10.sup.22 n/cm.sup.2 (E>1 MeV), and having thermal expansion coefficients approximately similar to that of structural materials. The high nickel austenitic stainless steels of the present invention having a resistance to degradation by neutron irradiation can be produced by subjecting stainless steels having compositions (by weight %) of 0.005 to 0.08% of carbon, at most 0.3% of Mn, at most 0.2% of (Si+P+S), 25 to 40% of Ni, 25 to 40% of Cr, at most 3% of Mo or at most 5% of (Mo+W), at most 0.3% of Nb+Ta, at most 0.3% of Ti, at most 0.001% of B and the balance of Fe to a solution-annealing treatment at a temperature of 1000 to 1150.degree. C.

    摘要翻译: PCT No.PCT / JP96 / 02442 Sec。 371日期:1997年6月5日 102(e)日期1996年6月5日PCT提交1996年8月30日PCT公布。 公开号WO97 / 09456 日期1997年3月13日本发明旨在提供具有耐中子辐射降解性的结构材料,即使在使材料经受大约至少1×1022n / cm 2的中子照射之后也不会在轻水反应堆的环境中产生SCC( E> 1 MeV),并且具有与结构材料大致相似的热膨胀系数。 具有耐中子辐射降解性的本发明的高镍奥氏体不锈钢可以通过将具有0.005-0.08%的碳,至多为0.3%Mn的组成(重量%)的不锈钢制成至多0.2 (Si + P + S),25〜40%的Ni,25〜40%的Cr,至多3%的Mo或至多5%的(Mo + W),至多0.3%的Nb + Ta ,至多0.3%的Ti,至多0.001%的B,余量为在1000至1150℃的温度下进行的溶液退火处理。