公开(公告)号：US07456456B2

公开(公告)日：2008-11-25

申请号：US11616680

申请日：2006-12-27

申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Rainer Bruchhaus

发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Rainer Bruchhaus

IPC分类号： H01L29/94

CPC分类号： H01L28/65 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.

摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。

公开(公告)号：US07259094B2

公开(公告)日：2007-08-21

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US20070111334A1

公开(公告)日：2007-05-17

申请号：US11616680

申请日：2006-12-27

申请人： Hiroshi ITOKAWA ,  Koji Yamakawa ,  Rainer Bruchhaus

发明人： Hiroshi ITOKAWA ,  Koji Yamakawa ,  Rainer Bruchhaus

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO.sub.3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.

摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。

公开(公告)号：US20050186767A1

公开(公告)日：2005-08-25

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/28 ,  C23C14/08 ,  C23C14/58 ,  C23C16/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/26 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8246 ,  H01L23/58 ,  H01L27/105 ,  H01L27/115 ,  H01L29/417 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US07233040B2

公开(公告)日：2007-06-19

申请号：US10833096

申请日：2004-04-28

申请人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

发明人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.

摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜， 提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上

公开(公告)号：US20050274999A1

公开(公告)日：2005-12-15

申请号：US10882203

申请日：2004-07-02

申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Rainer Bruchhaus

发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Rainer Bruchhaus

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/115 ,  H01L31/062

CPC分类号： H01L28/65 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.

摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。

公开(公告)号：US20050070043A1

公开(公告)日：2005-03-31

申请号：US10673247

申请日：2003-09-30

申请人： Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Osamu Arisumi ,  Hiroshi Itokawa ,  Hiroyuki Kanaya ,  Kazuhiro Tomioka ,  Keisuke Nakazawa ,  Yasuyuki Taniguchi ,  Uli Egger

发明人： Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Osamu Arisumi ,  Hiroshi Itokawa ,  Hiroyuki Kanaya ,  Kazuhiro Tomioka ,  Keisuke Nakazawa ,  Yasuyuki Taniguchi ,  Uli Egger

IPC分类号： B23Q3/157 ,  H01L21/00 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L28/55 ,  H01L21/0332 ,  H01L21/31122 ,  H01L21/31144 ,  H01L28/65

摘要： The present invention provides a method for manufacturing a semiconductor device equipped with a capacitor in which a dielectric film is used, wherein a complex oxide is used as a mask material when the dielectric film is etched.

摘要翻译： 本发明提供了一种制造半导体器件的方法，所述半导体器件配备有使用电介质膜的电容器，其中当蚀刻所述电介质膜时，使用复合氧化物作为掩模材料。

公开(公告)号：US20050001251A1

公开(公告)日：2005-01-06

申请号：US10834928

申请日：2004-04-30

申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Katsuaki Natori

发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Katsuaki Natori

IPC分类号： H01L21/316 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a top electrode and a dielectric film between the bottom and top electrodes, the bottom electrode including a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, expressed by ABO3, and containing first metal element as B-site element, and a metal film provided between the conductive film and the metal oxide film, and containing second metal element which is B-site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy when the second metal element forms oxide being larger than that when the first metal element forms oxide, a thickness of the metal oxide film being 5 nm or less.

摘要翻译： 一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且在底电极和顶电极之间包括底电极，顶电极和电介质膜，底电极包括选自贵金属膜 和由ABO3表示的电介质膜和导电膜之间具有钙钛矿结构的金属氧化物膜，并且含有作为B位元素的第一金属元素的金属氧化物膜和设置在导电膜之间的金属膜 和金属氧化物膜，并且含有作为具有钙钛矿结构的金属氧化物的B位元素的第二金属元素，当第二金属元素形成氧化物时，吉布斯自由能的降低大于第一金属元素形成氧化物时的吉布斯自由能的降低 ，金属氧化物膜的厚度为5nm以下。

公开(公告)号：US20080160642A1

公开(公告)日：2008-07-03

申请号：US12046229

申请日：2008-03-11

申请人： Hiroshi Itokawa ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

发明人： Hiroshi Itokawa ,  Keitaro Imai ,  Koji Yamakawa ,  Bum-ki Moon

IPC分类号： H01L21/8234

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  H01L28/91

摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, a conductive plug which is connected to an active region of a transistor formed on the semiconductor substrate, a metal silicide film which covers a bottom surface portion and side surface portion of the conductive plug, and an electrode structure which is formed on the conductive plug.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底，连接到形成在半导体衬底上的晶体管的有源区的导电插塞，覆盖半导体衬底的底表面部分和侧表面部分的金属硅化物膜 导电插头和形成在导电插头上的电极结构。

公开(公告)号：US20070231948A1

公开(公告)日：2007-10-04

申请号：US11754022

申请日：2007-05-25

申请人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

发明人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成电容器，所述电容器包括含有Pb，Zr，Ti和O的电介质膜。形成所述电容器包括形成含有Pb，Sr，Zr，Ti， 汝和O.