公开(公告)号：US20090263112A1

公开(公告)日：2009-10-22

申请号：US12421896

申请日：2009-04-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F26B3/30

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。 这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

公开(公告)号：US08498525B2

公开(公告)日：2013-07-30

申请号：US13293641

申请日：2011-11-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F24C7/00

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。

公开(公告)号：US20120114316A1

公开(公告)日：2012-05-10

申请号：US13293641

申请日：2011-11-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F27D11/12

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。

公开(公告)号：US08145046B2

公开(公告)日：2012-03-27

申请号：US12421896

申请日：2009-04-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F26B3/30 ,  C33C16/00 ,  A21B1/00

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。 这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

公开(公告)号：US08041198B2

公开(公告)日：2011-10-18

申请号：US12424192

申请日：2009-04-15

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F26B3/30 ,  C23C16/00 ,  A21B1/00

CPC分类号： H01L21/67115

摘要： In photo-irradiation heating with a total photo-irradiation time of one second or less, after initial photo-irradiation of a semiconductor wafer is performed while increasing an emission output to a target value, succeeding photo-irradiation of the semiconductor wafer is performed while maintaining the emission output within a range of plus or minus 20% from the target value. The photo-irradiation time for the initial photo-irradiation ranges from 0.1 to 10 milliseconds, and the photo-irradiation time for the succeeding photo-irradiation ranges from 5 milliseconds to less than one second. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature, thus achieving both the activation of implanted ions and the repair of introduced defects without any thermal damage to the semiconductor wafer.

摘要翻译： 在总光照照射时间为1秒以下的光照射加热中，在将发光输出增加到目标值的同时进行半导体晶片的初始光照射之后，进行半导体晶片的后续光照射，同时 将排放量保持在与目标值的±20％范围内。 初始光照射的光照射时间为0.1〜10毫秒，后续光照射的光照射时间为5毫秒至小于1秒。 这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大体上恒定的处理温度，从而实现注入离子的激活和修复 引入了对半导体晶片没有任何热损伤的缺陷。

公开(公告)号：US20130078822A1

公开(公告)日：2013-03-28

申请号：US13603584

申请日：2012-09-05

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H01L21/26

CPC分类号： H01L21/67115 ,  H01L21/26513 ,  H01L21/2686

摘要： First flash irradiation from flash lamps is performed on an upper surface of a semiconductor wafer supported on a temperature equalizing ring of a holder to cause the semiconductor wafer to jump up from the temperature equalizing ring into midair. While the semiconductor wafer is in midair above the temperature equalizing ring, second flash irradiation from the flash lamps is performed on the upper surface of the semiconductor wafer to increase the temperature of the upper surface of the semiconductor wafer to a treatment temperature. Cracking in the semiconductor wafer is prevented because the second flash irradiation is performed while the semiconductor wafer is in midair and subject to no restraints.

摘要翻译： 在支撑在保持器的温度均衡环上的半导体晶片的上表面上进行来自闪光灯的第一闪光照射，以使半导体晶片从温度均衡环向上跳跃到空中。 当半导体晶片处于温度均衡环的空中时，在半导体晶片的上表面上执行来自闪光灯的第二闪光照射，以将半导体晶片的上表面的温度升高到处理温度。 由于在半导体晶片处于空中并且不受约束的情况下执行第二闪光照射，所以防止了半导体晶片的破裂。

公开(公告)号：US20080092929A1

公开(公告)日：2008-04-24

申请号：US11867916

申请日：2007-10-05

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： B08B3/02

CPC分类号： H01L21/67034 ,  H01L21/67051

摘要： A substrate processing apparatus includes a substrate holding unit for holding a substrate to be processed substantially horizontally, a process liquid nozzle for supplying a process liquid to a main surface of the substrate held by the substrate holding unit, a gas nozzle for supplying an inert gas to the main surface of the substrate held by the substrate holding unit, a gas nozzle moving unit for moving the gas nozzle along the main surface, and a control unit for carrying out a liquid film forming process for forming a liquid film of the process liquid on a whole area of the main surface of the substrate held by the substrate holding unit by supplying the process liquid from the process liquid nozzle to the main surface of the substrate, and a liquid film free region forming process for forming a liquid film free region from which the liquid film is removed away in a region of the main surface not including a center of the main surface by supplying an inert gas to the main surface on which the liquid film is formed, a liquid film free region moving process for moving the liquid film free region to locate the center of the main surface in the liquid film free region by moving the gas nozzle by means of the gas nozzle moving unit with supplying the inert gas from the gas nozzle to the main surface after the liquid film free region forming process, and a substrate drying process for removing the process liquid from the main surface by spreading the liquid film free region after the liquid film free region moving process to dry the substrate.

摘要翻译： 基板处理装置包括：基板保持单元，用于保持基本上水平的待处理基板;处理液喷嘴，用于将处理液供给到由基板保持单元保持的基板的主表面;气体喷嘴，用于供应惰性气体 到由基板保持单元保持的基板的主表面，用于沿着主表面移动气体喷嘴的气体喷嘴移动单元，以及用于进行用于形成处理液的液膜的液膜形成处理的控制单元 在由基板保持单元保持的基板的主表面的整个区域上，通过将处理液体从处理液喷嘴供给到基板的主表面，以及用于形成无液膜区域的无液膜区域形成工艺 通过向主表面供给惰性气体，在主表面的不包括主表面的中心的区域中将液膜除去 在其上形成有液膜的无液膜区域移动过程，用于通过气体喷嘴移动单元移动气体喷嘴以移动液膜自由区域以将主表面的中心定位在液膜自由区域中， 在无液膜形成工序之后，将来自气体喷嘴的惰性气体供给到主表面，以及通过在无液膜区域移动过程之后涂布液膜自由区域从主表面除去处理液的基板干燥工序 干燥基材。

公开(公告)号：US09437456B2

公开(公告)日：2016-09-06

申请号：US14176262

申请日：2014-02-10

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： F27D11/00 ,  H01L21/324 ,  F27B17/00 ,  F27D5/00 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

公开(公告)号：US07965927B2

公开(公告)日：2011-06-21

申请号：US11871241

申请日：2007-10-12

申请人： Kenichi Yokouchi ,  Jun Watanabe

发明人： Kenichi Yokouchi ,  Jun Watanabe

IPC分类号： A21B2/00

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： In a heat treatment apparatus, a holding part moves upwardly to receive a semiconductor wafer transported into a chamber and placed on support pins. The semiconductor wafer held in close proximity to a light-transmittable plate by the holding part is preheated by a hot plate, and is then flash-heated by a flash of light emitted from flash lamps. Thereafter, the holding part moves downwardly to transfer the semiconductor wafer to the support pins, and the semiconductor wafer is transported out of the chamber. Then, a new semiconductor wafer is transported into the chamber. The holding part is adapted to perform such a series of operations of moving upwardly and downwardly also when in a standby condition pending the transport of the first semiconductor wafer in a lot into the chamber.

摘要翻译： 在热处理装置中，保持部向上移动以接收输送到室中的半导体晶片并且放置在支撑销上。 通过保持部保持在可透光板附近的半导体晶片由热板预热，然后由闪光灯发出的闪光闪光加热。 此后，保持部分向下移动以将半导体晶片传送到支撑销，并且半导体晶片被输送出室外。 然后，将新的半导体晶片输送到室中。 保持部适于执行这样一系列的操作，即当处于备用状态时，向上和向下移动，等待将第一半导体晶片批量输送到腔室中。

公开(公告)号：US09082728B2

公开(公告)日：2015-07-14

申请号：US13177696

申请日：2011-07-07

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： F27D11/12 ,  H01L21/324 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66

CPC分类号： H01L21/324 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/68707 ,  H01L29/6659 ,  H05B3/0047

摘要： A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.

摘要翻译： 执行第一闪光加热，其中闪光灯通过来自卤素灯的发光将第一闪光发射到已经被加热到等于或低于650℃的第一预热温度的半导体晶片，使得温度 半导体晶片的表面达到1000℃以上。 然后，进行第二闪光加热，其中第二闪光被发射到被卤素灯的发光进一步加热的半导体晶片上。 进行第一次闪蒸加热可以抑制随后的第二次闪蒸加热时杂质的扩散。 在第二次闪光加热中，杂质被激活并引入晶体缺陷被回收。