Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer
    1.
    发明授权
    Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer 有权
    具有高耐压的半导体器件和具有可通过反相层连接到扩散源极层的高导电性区域的漏极层

    公开(公告)号:US06563169B1

    公开(公告)日:2003-05-13

    申请号:US09367599

    申请日:1999-08-18

    IPC分类号: H01L2976

    摘要: A highly conductive region 18 serving as a surface of a drain layer 2 of a first conductivity type is diffused more deeply than a main diffused layer 36 and a diffused channel layer 37, and has a small conducting resistance. The highly conductive region 18 is surrounded by a diffused region 40 of a second conductivity type which comprises a diffused base layer 38 and a diffused guard ring layer 13. Therefore, the highly conductive region 18 does not form spherical junctions, and a depletion layer spreading in the highly conductive region 18 extends into the highly conductive region 18. The highly conductive region 18 thus has a high withstand voltage while maintaining the low conducting resistance.

    摘要翻译: 用作第一导电类型的漏极层2的表面的高导电性区域18比主扩散层36和扩散沟道层37更深地扩散,并且具有小的导电电阻。 高导电区域18由第二导电类型的扩散区域40包围,该扩散区域40包括扩散的基极层38和扩散的保护环层13.因此,高导电区域18不形成球形结,耗散层扩展 在高导电区域18中延伸到高导电区域18.因此,高导电区域18具有高耐受电压,同时保持低导电电阻。

    Field effect transistor having high breakdown withstand capacity
    2.
    发明授权
    Field effect transistor having high breakdown withstand capacity 失效
    具有高击穿耐受能力的场效应晶体管

    公开(公告)号:US06369424B1

    公开(公告)日:2002-04-09

    申请号:US09595910

    申请日:2000-06-20

    IPC分类号: H01L2976

    摘要: A field effect transistor having a high breakdown withstand capacity is provided. An active region 7a is surrounded by a fixed potential diffusion layer 16, and a channel region 15 is formed in the active region 7a. A gate pad 35 is provided outside the fixed potential diffusion layer 16. Minority carriers injected at a peripheral region of the active region 7a flow into the fixed potential diffusion layer 16, which prevents breakdown attributable to concentration of the carriers. The fixed potential diffusion layer 16 is surrounded by a plurality of guard ring diffusion layers 171 through 174, and a pad diffusion layer 18 formed in a position under the gate pad 35 is connected to the innermost guard ring diffusion layer 171. Since this encourages expansion of a depletion layer under the gate pad 35, an increased breakdown voltage is provided.

    摘要翻译: 提供具有高击穿耐受能力的场效应晶体管。 有源区域7a被固定电位扩散层16包围,并且在有源区域7a中形成沟道区域15。 栅极焊盘35设置在固定电位扩散层16的外侧。在有源区域7a的周围区域注入的少量载流子流入固定电位扩散层16,防止由载流子浓度引起的破坏。 固定电位扩散层16被多个保护环扩散层171至174包围,并且形成在栅极焊盘35下方的焊盘扩散层18连接到最内侧的保护环扩散层171.由于这鼓励扩展 在栅极焊盘35下方的耗尽层,提供了增加的击穿电压。

    Field effect transistor with high withstand voltage and low resistance
    3.
    发明授权
    Field effect transistor with high withstand voltage and low resistance 有权
    具有高耐压和低电阻的场效应晶体管

    公开(公告)号:US06635926B2

    公开(公告)日:2003-10-21

    申请号:US09908540

    申请日:2001-07-20

    IPC分类号: H01L2978

    摘要: A field effect transistor with a high withstand voltage and a low resistance is provided. A ring-shaped channel region is disposed inside a source region formed in a ring, and the inside of the channel region is taken as a drain region. A depletion layer extends toward the inside of the drain region, resulting in a high withstand voltage. In the portion, except the portion within a prescribed distance from the corner portion of the channel region, a low resistance conductive layer is disposed, thereby resulting in high withstand voltage.

    摘要翻译: 提供具有高耐受电压和低电阻的场效应晶体管。 环形沟道区域设置在形成在环中的源极区域内,并且沟道区域的内部被作为漏极区域。 耗尽层朝向漏极区域的内部延伸,导致高的耐受电压。 在该部分中,除了距通道区域的角部规定距离内的部分,设置低电阻导电层,从而导致高耐压。

    Latch circuit tolerant to single event transient
    6.
    发明授权
    Latch circuit tolerant to single event transient 有权
    锁存电路容忍单事件瞬态

    公开(公告)号:US07982515B2

    公开(公告)日:2011-07-19

    申请号:US11802179

    申请日:2007-05-21

    申请人: Hideyuki Nakamura

    发明人: Hideyuki Nakamura

    IPC分类号: H03K3/356

    摘要: A latch circuit has: a data input unit to which an input data is input; and a data retention unit including a node connected to the data input unit. The data input unit transmits a data depending on the input data to the node, when both of a first clock signal and a second clock signal that are driven independently from each other are at a first level. The data retention unit holds a data at the node, when at least one of the first clock signal and the second clock signal is at a second level that is an inverted level of the first level.

    摘要翻译: 锁存电路具有:输入数据的数据输入单元; 以及包括连接到所述数据输入单元的节点的数据保持单元。 当彼此独立驱动的第一时钟信号和第二时钟信号都处于第一电平时,数据输入单元将根据输入数据的数据发送到节点。 当第一时钟信号和第二时钟信号中的至少一个处于作为第一电平的反相电平的第二电平时,数据保持单元保存节点处的数据。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20100320570A1

    公开(公告)日:2010-12-23

    申请号:US12775115

    申请日:2010-05-06

    IPC分类号: H01L29/06

    摘要: The present invention includes a memory cell area that includes a plurality of transistors, and a core area that is arranged adjacent to the memory cell area. The memory cell area and the core area include a semiconductor layer, and an n-type well region and a first p-type well region formed above the semiconductor layer. The memory cell area further includes a second p-type well region formed under the n-type well region and the first p-type well region in the semiconductor layer. The second p-type well region contacts to at least the first p-type well region.

    摘要翻译: 本发明包括具有多个晶体管的存储单元区域和与存储单元区域相邻布置的核心区域。 存储单元区域和核心区域包括半导体层,以及形成在半导体层上方的n型阱区域和第一p型阱区域。 存储单元区域还包括形成在半导体层中的n型阱区和第一p型阱区之下的第二p型阱区。 第二p型阱区域至少与第一p型阱区域接触。

    SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE, LIQUID CRYSTAL DISPLAY ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE
    8.
    发明申请
    SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE, LIQUID CRYSTAL DISPLAY ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置用基板,液晶显示元件及液晶显示装置

    公开(公告)号:US20090122242A1

    公开(公告)日:2009-05-14

    申请号:US12095283

    申请日:2006-11-27

    申请人: Hideyuki Nakamura

    发明人: Hideyuki Nakamura

    IPC分类号: G02F1/1339 G02F1/1335

    摘要: A substrate for liquid crystal display includes at least: at least two substrates (a glass substrate and a TFT substrate); a liquid crystal layer disposed between the substrates; an ITO film that applies an electric field to the liquid crystal layer; a photospacer that regulates cell thickness (a thickness of a liquid crystal layer) between the substrates; a light-shielding film; and a colored layer, in which at least a part of the photospacer is formed on the light-shielding film or at a portion where the light-shielding film and the colored layer overlap; and the light-shielding film includes at least one of a resin and a precursor thereof and also includes metal particles having a silver-tin alloy portion.

    摘要翻译: 用于液晶显示器的基板至少包括:至少两个基板(玻璃基板和TFT基板); 设置在所述基板之间的液晶层; 向液晶层施加电场的ITO膜; 调节基板之间的单元厚度(液晶层的厚度)的光学隔膜; 遮光膜; 以及着色层,其中在遮光膜上或在遮光膜和着色层重叠的部分处形成至少一部分光电隔离器; 并且所述遮光膜包括树脂及其前体中的至少一种,并且还包括具有银 - 锡合金部分的金属颗粒。

    Oil well pipe for expandable tubular applications excellent in post-expansion toughness and method of manufacturing the same
    9.
    发明申请
    Oil well pipe for expandable tubular applications excellent in post-expansion toughness and method of manufacturing the same 审中-公开
    用于可膨胀管状应用的后井膨胀韧性优异的油井管及其制造方法

    公开(公告)号:US20090044882A1

    公开(公告)日:2009-02-19

    申请号:US11921349

    申请日:2006-06-09

    IPC分类号: C21D9/08 C22C38/00

    摘要: The invention provides an oil well pipe for expandable tubular applications excellent in post-expansion toughness and a method of manufacturing the oil well pipe. The oil well pipe for expandable tubular applications comprises, in mass %, C: 0.03 to 0.14%, Si: 0.8% or less, Mn: 0.3 to 2.5%, P: 0.03% or less, S: 0.01% or less, Ti: 0.005 to 0.03%, Al: 0.1% or less, N: 0.001 to 0.01%, B: 0.0005 to 0.003%, optionally comprises one or move of Nb, Ni, Mo, Cr, Cu and V, and further optionally comprises one or both of Ca and REM, satisfies the relationship A=2.7C+0.4Si+Mn+0.45Ni+0.45Cu+0.8Cr+2Mo≧1.8, has a balance of iron and unavoidable impurities, and is formed of tempered martensite structure. The manufacturing method according to the invention is characterized in subjecting a steel stock pipe of the foregoing composition to hardening from a temperature range of Ac3 point+30° C. or greater and to tempering at a temperature of 350 to 720° C.

    摘要翻译: 本发明提供了一种用于后膨胀韧性优异的可膨胀管状应用的油井管和一种制造油井管的方法。 可膨胀管状的油井管以质量%计含有C:0.03〜0.14%,Si:0.8%以下,Mn:0.3〜2.5%,P:0.03%以下,S:0.01%以下,Ti :0.005〜0.03%,Al:0.1%以下,N:0.001〜0.01%,B:0.0005〜0.003%,任选地包含Nb,Ni,Mo,Cr,Cu和V中的一种或多种, 或Ca和REM两者满足A = 2.7C + 0.4Si + Mn + 0.45Ni + 0.45Cu + 0.8Cr + 2Mo> = 1.8的关系,其余为铁和不可避免的杂质,并且由回火马氏体组织形成 。 根据本发明的制造方法的特征在于,将上述组成的钢坯管从Ac 3点+ 30℃以上的温度范围进行硬化,并在350〜720℃的温度下回火。

    Railway Vehicle
    10.
    发明申请
    Railway Vehicle 审中-公开
    铁路车辆

    公开(公告)号:US20080060544A1

    公开(公告)日:2008-03-13

    申请号:US11622531

    申请日:2007-01-12

    IPC分类号: B61D3/00

    CPC分类号: B61D15/06 B61D17/06

    摘要: The invention provides a car body of a railway vehicle capable of absorbing the energy caused when collision occurs to the end of the car body. The present invention comprises a strength member 15 disposed along the circumferential direction of the car body on the end of the car body, a strength member 16 disposed along the circumferential direction at a position rearward from the member 15, rib members 17 disposed along the longitudinal direction of the car body and connecting the two strength members, and an outer panel 18 covering the same. The longitudinal direction of the rib member 17 corresponds to the longitudinal direction of the car body. The rib member 17 is composed of two flanges 17c, 17d and a web 17b connecting the two flanges, and the side having the web 17b is welded to the outer panel 18 via fillet welding. A notch 21 opened to the edge of the flange is formed on the flange at the center of the longitudinal direction of the rib member 17. When collision load is applied, the notch 21 is valley-folded, by which the rib member is bent toward the direction opposite from the side to which the outer panel 18 is attached, so that the collision load can be absorbed sufficiently since the outer panel 18 will not interfere with the buckling of the rib member 17.

    摘要翻译: 本发明提供一种铁路车辆的车体,其能够吸收当碰撞发生到车体的端部时引起的能量。 本发明包括:加强构件15,其沿着车体的车体的周向设置在车身的端部;加强构件16,其沿着圆周方向设置在从构件15的后方的位置;肋构件17,沿纵向 车身的方向并且连接两个强度构件,以及覆盖其的外板18。 肋构件17的纵向方向对应于车体的纵向方向。 肋构件17由两个凸缘17c,17d和连接两个凸缘的腹板17b组成,并且具有腹板17b的侧面通过角焊焊接到外板18。 在肋构件17的纵向方向的中心的凸缘上形成有向凸缘边缘开口的凹口21。 当施加碰撞载荷时,凹口21是谷底折叠的,肋构件被弯曲到与安装外板18的侧面相反的方向,从而可以充分吸收碰撞载荷,因为外板 18不会妨碍肋构件17的弯曲。