公开(公告)号：US20080011229A1

公开(公告)日：2008-01-17

申请号：US11819838

申请日：2007-06-29

Applicant: Haruo Takahashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

Inventor： Haruo Takahashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

IPC: B05C11/10

CPC classification number: G02B5/288 ,  G01B11/0616 ,  G01B11/0683

Abstract: To provide a method of controlling film thickness of dielectric multilayer film, such as optical thin film, with high precision, an optical film thickness controlling apparatus and a dielectric multilayer film manufacturing apparatus that can control the film thickness based on the same method, and dielectric multilayer film manufactured using the controlling apparatus or manufacturing apparatus. An optical film thickness controlling apparatus includes a film formation device 15 having a rotatable substrate 23 and a sputtering target 28, a photodiode 16 that detects each of a plurality of monochromatic light beams applied to the rotatable substrate along a radius thereof at predetermined intervals, and an A/D converter 17, in which a movable shutter 29 that moves along the direction of the radius of the rotatable substrate 23 to shut off film formation on the substrate 23 is provided between the substrate 23 and the target 28. From each of the monochromatic light beams detected by the photodiode 16 and the A/D converter 17, a quadratic regression function of reciprocal transmittance is calculated by a least squares method, and a CPU 18 and a motor driver 19, which indicate motion of the movable shutter based on each predicted value of the film growing time when the latest surface layer film reaches to predetermined optical film thickness, move the movable shutter 29 to shut off the film formation at the film formation region where the predetermined optical film thickness is reached to.

Abstract translation: 为了提供一种以高精度控制诸如光学薄膜的电介质多层膜的膜厚的方法，可以基于相同的方法控制膜厚度的光学膜厚控制装置和电介质多层膜制造装置以及电介质 使用所述控制装置或制造装置制造的多层膜。 光学膜厚控制装置包括具有可旋转基板23和溅射靶28的成膜装置15，光电二极管16，其沿预定间隔沿其半径检测施加到可旋转基板的多个单色光束;以及 A / D转换器17，其中在基板23和目标28之间设置有沿着可旋转基板23的半径方向移动以截止基板23上的成膜的活动快门29。 从由光电二极管16和A / D转换器17检测的每个单色光束中，通过最小二乘法计算倒数透射率的二次回归函数，并且CPU 18和电机驱动器19指示 基于当最新表面层膜达到预定的光学膜厚度时的成膜时间的每个预测值的可移动快门，移动活动快门29以关闭到达预定光学膜厚度的成膜区域处的成膜， 。

公开(公告)号：US07927472B2

公开(公告)日：2011-04-19

申请号：US11819838

申请日：2007-06-29

Applicant: Haruo Takahashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

Inventor： Haruo Takahashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

IPC: C23C14/35 ,  C23C16/00

CPC classification number: G02B5/288 ,  G01B11/0616 ,  G01B11/0683

Abstract: To provide a method of controlling film thickness of dielectric multilayer film, such as optical thin film, with high precision, an optical film thickness controlling apparatus and a dielectric multilayer film manufacturing apparatus that can control the film thickness based on the same method, and dielectric multilayer film manufactured using the controlling apparatus or manufacturing apparatus. An optical film thickness controlling apparatus includes a film formation device 15 having a rotatable substrate 23 and a sputtering target 28, a photodiode 16 that detects each of a plurality of monochromatic light beams applied to the rotatable substrate along a radius thereof at predetermined intervals, and an A/D converter 17, in which a movable shutter 29 that moves along the direction of the radius of the rotatable substrate 23 to shut off film formation on the substrate 23 is provided between the substrate 23 and the target 28. From each of the monochromatic light beams detected by the photodiode 16 and the A/D converter 17, a quadratic regression function of reciprocal transmittance is calculated by a least squares method, and a CPU 18 and a motor driver 19, which indicate motion of the movable shutter based on each predicted value of the film growing time when the latest surface layer film reaches to predetermined optical film thickness, move the movable shutter 29 to shut off the film formation at the film formation region where the predetermined optical film thickness is reached to.

Abstract translation: 为了提供一种以高精度控制诸如光学薄膜的电介质多层膜的膜厚的方法，可以基于相同的方法控制膜厚度的光学膜厚控制装置和电介质多层膜制造装置以及电介质 使用所述控制装置或制造装置制造的多层膜。 光学膜厚控制装置包括具有可旋转基板23和溅射靶28的成膜装置15，光电二极管16，其沿预定间隔沿其半径检测施加到可旋转基板的多个单色光束;以及 A / D转换器17，其中在基板23和目标28之间设置有沿着可旋转基板23的半径的方向移动以在基板23上切断膜形成的活动快门29。 由光电二极管16和A / D转换器17检测的单色光束，通过最小二乘法计算倒数透射率的二次回归函数，以及指示可移动快门的运动的CPU 18和电动机驱动器19，其基于 当最新的表面层膜达到预定的光学膜厚度时的成膜时间的每个预测值，移动活动遮板29以切断 在达到预定光学膜厚度的成膜区域形成膜。

公开(公告)号：US07247345B2

公开(公告)日：2007-07-24

申请号：US10394667

申请日：2003-03-24

Applicant: Haruo Takahashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

Inventor： Haruo Takahashi ,  Kouichi Hanzawa ,  Takafumi Matsumoto

IPC: B05D5/06

CPC classification number: G02B5/288 ,  G01B11/0616 ,  G01B11/0683

Abstract: A method of controlling film thickness of dielectric multilayer film with high precision, an optical film thickness controlling apparatus and a dielectric multilayer film manufacturing apparatus that can control the film thickness. An optical film thickness controlling apparatus includes a film formation device having a rotatable substrate and a sputtering target, a photodiode that detects each of a plurality of monochromatic light beams applied to the rotatable substrate along a radius thereof at predetermined intervals, in which a movable shutter that moves along the direction of the radius of the rotatable substrate to shut off film formation on the substrate between the substrate and the target. From each of the monochromatic light beams, a quadratic regression function of reciprocal transmittance is calculated by a least squares method, and a CPU and a motor driver move the movable shutter to shut off the film formation at the film formation region.

Abstract translation: 高精度地控制电介质多层膜的膜厚的方法，可以控制膜厚度的光学膜厚控制装置和电介质多层膜制造装置。 光学膜厚度控制装置包括具有可旋转基板和溅射靶的成膜装置，光电二极管，其以预定间隔检测沿其半径施加到可旋转基板的多个单色光束中的每一个，其中活动快门 其沿着可旋转基板的半径的方向移动以截止基板和基板之间的基板上的膜形成。 从每个单色光束，通过最小平方法计算倒数透射率的二次回归函数，并且CPU和电动机驱动器移动可移动快门以切断成膜区域处的成膜。

公开(公告)号：US07973280B2

公开(公告)日：2011-07-05

申请号：US12378138

申请日：2009-02-11

Applicant: Haruo Takahashi ,  Yutaka Ikku ,  Yo Yamamoto ,  Kouji Iwasaki

Inventor： Haruo Takahashi ,  Yutaka Ikku ,  Yo Yamamoto ,  Kouji Iwasaki

IPC: G01N23/00 ,  H01J27/00

CPC classification number: H01J37/3056 ,  G01N1/286 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/3045 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.

Abstract translation: 提供了一种设备，其精确地将离子束蚀刻导入具有易于通过电子束照射而改变的性质的样品，而不会损失操作容易性和生产量。 一种装置包括离子束透镜镜筒和电子束透镜镜筒，其可以在用离子束蚀刻的过程中观察或测量具有电子束的样品的条件，其中首先获得包括 在观察图像中定义由电子束产生的二次信号形成的整个处理区域，其次，照射许可区域和照射禁止区域，第三，电子束照射仅限于照射许可区域。

公开(公告)号：US20090275095A1

公开(公告)日：2009-11-05

申请号：US12324804

申请日：2008-11-26

Applicant: Nobuhiro Ishida ,  Kenro Tokuhiro ,  Haruo Takahashi ,  Eiji Nagamori ,  Masana Hirai ,  Satoshi Saitoh ,  Tohru Ohnishi

Inventor： Nobuhiro Ishida ,  Kenro Tokuhiro ,  Haruo Takahashi ,  Eiji Nagamori ,  Masana Hirai ,  Satoshi Saitoh ,  Tohru Ohnishi

IPC: C12P7/56 ,  C07H21/04 ,  C12N1/19 ,  C12N1/15 ,  C12N1/21

CPC classification number: C12N9/0006 ,  C12P7/56 ,  C12P7/625

Abstract: This invention provides a polynucleotide that encodes a protein having lactate dehydrogenase activity and such protein that can be used for producing D-lactic acid. This polynucleotide has the nucleotide sequence as shown in SEQ ID NO: 1 (a), and it hybridizes under stringent conditions with a probe comprising all or part of the nucleotide sequence as shown in SEQ ID NO: 1 or a complementary strand thereof and encodes a protein having D-lactate dehydrogenase activity (b).

Abstract translation: 本发明提供编码具有乳酸脱氢酶活性的蛋白质的多核苷酸和可用于生产D-乳酸的蛋白质。 该多核苷酸具有SEQ ID NO：1（a）所示的核苷酸序列，并且在严格条件下与包含SEQ ID NO：1所示的全部或部分核苷酸序列或其互补链的探针杂交，并编码 具有D-乳酸脱氢酶活性的蛋白质（b）。

公开(公告)号：US20090206254A1

公开(公告)日：2009-08-20

申请号：US12378138

申请日：2009-02-11

Applicant: Haruo Takahashi ,  Yutaka Ikku ,  Yo Yamamoto ,  Kouji Iwasaki

Inventor： Haruo Takahashi ,  Yutaka Ikku ,  Yo Yamamoto ,  Kouji Iwasaki

IPC: G01N23/00 ,  A61N5/00

CPC classification number: H01J37/3056 ,  G01N1/286 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/3045 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.

Abstract translation: 提供了一种设备，其精确地将离子束蚀刻导入具有易于通过电子束照射而改变的性质的样品，而不会损失操作容易性和生产量。 一种装置包括离子束透镜镜筒和电子束透镜镜筒，其可以在用离子束蚀刻的过程中观察或测量具有电子束的样品的条件，其中首先获得包括 在观察图像中定义由电子束产生的二次信号形成的整个处理区域，其次，照射许可区域和照射禁止区域，第三，电子束照射仅限于照射许可区域。

公开(公告)号：US07442942B2

公开(公告)日：2008-10-28

申请号：US11509520

申请日：2006-08-24

Applicant: Haruo Takahashi ,  Toshiaki Fujii ,  Yutaka Ikku ,  Kouji Iwasaki ,  Yo Yamamoto

Inventor： Haruo Takahashi ,  Toshiaki Fujii ,  Yutaka Ikku ,  Kouji Iwasaki ,  Yo Yamamoto

IPC: H01J37/20

CPC classification number: H01J37/304 ,  G01N1/32 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.

Abstract translation: 为了包括聚焦离子束装置，通过加工试样和观察切片试样来制造切片样品，观察切片试样的扫描电子显微镜，气相离子束照射装置，通过将气体离子束照射到 切片试样的表面，切片试样固定并具有至少一个以上的旋转轴的试样台，识别切片试样相对于试样台的位置关系的试样姿势识别装置和试样台控制 意味着基于由姿势识别装置识别的样本姿势和气体离子束照射装置的安装角度来控制样本台，以便允许气体离子束相对于正面或反向的入射角 切片样品为期望值。

公开(公告)号：US6154517A

公开(公告)日：2000-11-28

申请号：US64332

申请日：1998-04-22

Applicant: Haruo Takahashi

Inventor： Haruo Takahashi

IPC: G01J3/02 ,  G01N23/223 ,  G01N22/223

CPC classification number: G01N23/223 ,  G01N2223/076

Abstract: Display is made of the spectrums of the fluorescent X-rays by using the ordinate axis as representing the square root of a fluorescent X-ray intensity and using the abscissa axis as representing the energy of the fluorescent X-rays.

Abstract translation: 通过使用纵轴表示荧光X射线强度的平方根并使用横坐标轴表示荧光X射线的能量，显示荧光X射线的光谱。

公开(公告)号：US6005435A

公开(公告)日：1999-12-21

申请号：US995726

申请日：1997-12-22

Applicant: Yasunobu Saida ,  Nobuaki Imamura ,  Yasuhiko Toda ,  Haruo Takahashi ,  Masaru Omura ,  Hisashi Takiguchi

Inventor： Yasunobu Saida ,  Nobuaki Imamura ,  Yasuhiko Toda ,  Haruo Takahashi ,  Masaru Omura ,  Hisashi Takiguchi

IPC: H04N5/68 ,  H02M3/28 ,  H04N3/185 ,  H04N3/26 ,  G05F1/10

CPC classification number: H04N3/185

Abstract: A high-voltage generating circuit includes a high-voltage production circuit, a high-voltage detecting circuit, and a control circuit. The high-voltage detecting circuit has a high-voltage circuit section to which a voltage of 1 kV to several tens of kilovolts is applied and a low-voltage circuit section to which a voltage of several tens of volts is applied. In the high-voltage circuit section, a parallel circuit formed of a first voltage-dividing resistor and a part of a second voltage-dividing resistor and a speed-up capacitor, and another parallel circuit formed of the remaining part of the second voltage-dividing resistor and a third voltage-dividing resistor and another speed-up capacitor are connected in series to form a two-stage parallel circuit.

Abstract translation: 高压发生电路包括高压生产电路，高压检测电路和控制电路。 高电压检测电路具有施加1kV至几十千伏的电压的高压电路部分和施加几十伏的电压的低压电路部分。 在高电压电路部分中，由第一分压电阻器和第二分压电阻器的一部分和加速电容器构成的并联电路，以及由第二电压分压电阻器的剩余部分形成的另一并联电路， 分压电阻器和第三分压电阻器和另一加速电容器串联连接以形成两级并联电路。

公开(公告)号：US5017486A

公开(公告)日：1991-05-21

申请号：US223305

申请日：1988-07-25

Applicant: Kiichi Sawai ,  Shunji Natori ,  Haruo Takahashi ,  Kenichi Tanaka ,  Takahiko Mitani ,  Masayasu Kurono

Inventor： Kiichi Sawai ,  Shunji Natori ,  Haruo Takahashi ,  Kenichi Tanaka ,  Takahiko Mitani ,  Masayasu Kurono

IPC: C12N15/09 ,  A61K38/00 ,  C07K14/435

CPC classification number: C07K14/43577 ,  A61K38/00

Abstract: A cloned single-strand DNA comprising nucleotide sequence which encodes an antibacterial polypeptide precursor, a cloned double-strand DNA consisting of the single-strand DNA and its complementary single-strand DNA, a DNA fragment of the single- or double-strand DNA, a process for the preparation thereof, and a plasmid, in which the double-strand DNA or its fragment is inserted are disclosed.