摘要:
A sample preparing device has a sample stage that supports a sample and undergoes rotation about a first rotation axis to bring a preselected direction of the sample piece into coincidence with an intersection line between a first plane formed by a surface of the sample piece and a second plane. A manipulator holds sample piece of the sample and undergoes rotation about a second rotation axis independently of the sample stage to rotate the sample piece to a preselected position in the state in which the preselected direction of the sample piece coincides with the intersection line. The manipulator is disposed relative to the sample stage so that an angle between the second rotation axis and the surface of the sample is in the range of 0° to 45°. The second plane corresponds to a plane obtained by rotating around the second rotation axis a line segment which is vertical to the surface of the sample and of which one end corresponds to an intersection between the surface of the sample and the second rotation axis.
摘要:
After a certain direction of a sample piece is allowed to coincide with an intersection line made by two planes of a surface of the sample and a conical side plane obtained by rotating, around a manipulator rotation axis, a line segment which is vertical to the surface of the sample and of which one end is an intersection of the surface of a sample and the manipulator rotation axis, the sample piece is supported by a manipulator and the manipulator rotation axis is operated.
摘要:
The apparatus for working and observing samples comprises a sample plate on which a sample is to be placed; a first ion beam lens barrel capable of irradiating a first ion beam over a whole predetermined irradiation range at one time; a mask that can be arranged between the sample plate and the first ion beam lens barrel, and shields part of the first ion beam; mask-moving means capable of moving the mask; a charged particle beam lens barrel capable of scanning a focused beam of charged particles in the range irradiated with the first ion beam; and detection means capable of detecting a secondarily generated substance.
摘要:
The apparatus for working and observing samples comprises a sample plate on which a sample is to be placed; a first ion beam lens barrel capable of irradiating a first ion beam over a whole predetermined irradiation range at one time; a mask that can be arranged between the sample plate and the first ion beam lens barrel, and shields part of the first ion beam; mask-moving means capable of moving the mask; a charged particle beam lens barrel capable of scanning a focused beam of charged particles in the range irradiated with the first ion beam; and detection means capable of detecting a secondarily generated substance.
摘要:
A cross-section processing and observation method includes: forming a first cross section in a sample by etching processing using a focused ion beam; obtaining image information of the first cross section by irradiating the focused ion beam to the first cross section; forming a second cross section by performing etching processing on the first cross section; obtaining image information of the second cross section by irradiating the focused ion beam to an irradiation region including the second cross section; displaying image information of a part of a display region of the irradiation region from the image information of the second cross section; displaying the image information of the first cross section by superimposing it on the image information being displayed; and moving the display region within the irradiation region. Observation images in which display regions are aligned can be obtained while reducing damage to the sample.
摘要:
A cross-section processing and observation method includes: forming a cross section in a sample by a focused ion beam through etching processing; obtaining a cross-section observation image through cross-section observation by the focused ion beam; and forming a new cross section by performing etching processing in a region including the cross section and obtaining a cross-section observation image of the new cross section. A surface observation image of a region including a mark on the sample and the cross section is obtained. A position of the mark is recognized in the surface observation image and etching processing is performed on the cross section by setting, in reference to the position of the mark, a focused ion beam irradiation region in which to form the new cross section. Cross-section processing and observation is thus enabled continuously and efficiently using a focused ion beam apparatus having no SEM apparatus.
摘要:
In a chamber of a charged particle beam apparatus, the sample on the sample substrate is gripped and carried to the sample holder, and there is controlled the attitude of the sample when the sample is fixed on the sample holder. There possesses a marking process applying, in the chamber, a marking to a surface of the sample Wb existing on the sample substrate by a beam, a carriage process gripping the sample by a sample gripping means and carrying it from the sample substrate to the sample holder, and an attitude control process controlling, when fixing the sample to the sample holder, the attitude of the sample while observing the marking applied to the surface of the sample.
摘要:
There are provided a detecting step of detecting secondary charged particles generated from an observation area of a sample when an electron beam or a focused ion beam is emitted onto the observation area under a certain irradiation condition; an image forming step of forming a plurality of observation images acquired by dividing the observation area and having an equal periodic pattern, from the secondary charged particles detected in the detecting step; and a defect recognizing step of recognizing a defect in the observation area from information on a difference acquired by comparing the plurality of observation images formed in the image forming step. Additionally, the detecting step, the image forming step, and the defect recognizing step are performed even when the electron beam or the focused ion beam is emitted onto the observation area under an irradiation condition different from the certain irradiation condition.
摘要:
In a micromachining apparatus equipped with an AFM having a plurality of independently actuatable probes, which uses an electron beam or a helium ion beam produced by a gas field ion source, an isolating pattern including a defect is grounded by bringing the conducting probe into contact with the pattern, and then the opaque defect is corrected while the charge-up by an electron beam or gas ion beam is prevented. In the case where there are isolating patterns in an observation range and the effect of the charge-up arises even when the isolating pattern including a defect is grounded, the respective isolating patterns are grounded by the plurality of conducting probes thereby to suppress the effect of the charge-up.
摘要:
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.