公开(公告)号：US06619537B1

公开(公告)日：2003-09-16

申请号：US09879543

申请日：2001-06-12

申请人： Hao Zhang ,  Jeff Hart ,  Ann Bolcavage

发明人： Hao Zhang ,  Jeff Hart ,  Ann Bolcavage

IPC分类号： B23K2000

CPC分类号： H01J37/3435 ,  B23K20/002 ,  B23K20/023 ,  B23K20/026 ,  B23K20/16 ,  B23K20/2333 ,  B23K28/006 ,  B23K35/002 ,  B23K35/007 ,  B23K35/3033 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/18 ,  C23C14/3414

摘要： A sputter target assembly including a high purity copper sputter target diffusion bonded to a backing plate, preferably composed of either aluminum, aluminum alloy, aluminum matrix composite materials, copper, or copper alloy, and a Ni-alloy interlayer, preferably composed of Ni—V, Ni—Ti, Ni—Cr, or Ni—Si, located between and joining the target and backing plate, and a method for making the assembly. The method of making involves depositing (e.g., electroplating, sputtering, plasma spraying) the interlayer on a mating surface of either the sputter target or backing plate and pressing, such as hot isostatically pressing, the sputter target and backing plate together along mating surfaces so as to form a diffusion bonded sputter target assembly.

摘要翻译： 包括优选由铝，铝合金，铝基复合材料，铜或铜合金构成的背衬板扩散的高纯度铜溅射靶的溅射靶组件和Ni合金中间层，优选由Ni- V，Ni-Ti，Ni-Cr或Ni-Si，以及用于制造组件的方法。 制造方法包括在溅射靶或背板的配合表面上沉积（例如电镀，溅射，等离子体喷涂）中间层，并按照配合表面一起按压等离子体将溅射靶和背板同时压制在一起 以形成扩散接合的溅射靶组件。

公开(公告)号：US06579431B1

公开(公告)日：2003-06-17

申请号：US09226798

申请日：1999-01-07

申请人： Ann Bolcavage ,  Jeff Hart

发明人： Ann Bolcavage ,  Jeff Hart

IPC分类号： C23C1434

CPC分类号： C23C14/3414 ,  B23K20/021 ,  B23K2103/10 ,  Y10T428/12736 ,  Y10T428/1275

摘要： An improved method for joining mating surfaces of a metallic sputter target and a backing plate of aluminum, aluminum alloy or aluminum matrix composite material to form a sputter target/backing plate assembly comprises the steps of roughening the mating surface of either the sputter target or the backing plate to form a plurality of salient portions; depositing an intermediate layer comprising nickel on that mating surface; pressing the sputter target and the backing plate together along the mating surfaces so as to disrupt the mating surfaces; and holding the sputter target and the backing plate in contact at a temperature just below the melting points of the sputter target and backing plate materials to promote diffusion bonding. In an especially preferred form of the invention, the mating surface on the harder of the sputter target or the backing plate is roughened by machining a series of concentric grooves. The grooved mating surface is covered by a layer of nickel having a consistent thickness, preferably by means of electroplating, sputtering, electroless plating, or as a foil. The sputter target and the backing plate are then joined along the mating surfaces using hot isostatic pressing or vacuum hot pressing.

摘要翻译： 一种用于接合铝，铝合金或铝基复合材料的金属溅射靶和背板的配合表面以形成溅射靶/背板组件的改进方法包括以下步骤：使溅射靶或溅射靶的匹配表面粗糙化 背板形成多个突出部分; 在所述配合表面上沉积包含镍的中间层; 沿着配合表面将溅射靶和背板压在一起，以便破坏配合表面; 并且在溅射靶和背板材料的熔点刚好低于熔点的温度下保持溅射靶和背板接触以促进扩散接合。 在本发明的特别优选的形式中，通过机械加工一系列同心凹槽，使溅射靶或背板的硬度上的配合表面粗糙化。 带槽的配合表面被具有一致厚度的镍层覆盖，优选地通过电镀，溅射，无电镀或作为箔。 然后使用热等静压或真空热压将溅射靶和背板沿配合表面接合。

公开(公告)号：US09546418B2

公开(公告)日：2017-01-17

申请号：US13984961

申请日：2012-02-09

申请人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

发明人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

IPC分类号： C23C14/24 ,  C23C14/34 ,  H01J37/34

CPC分类号： H01J37/3426 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3423 ,  H01J37/3435

摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和背衬板之间的Al中间层。 该组件的粘合强度超过50MPa。

公开(公告)号：US20140034490A1

公开(公告)日：2014-02-06

申请号：US13984961

申请日：2012-02-09

申请人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

发明人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

IPC分类号： C23C14/34

CPC分类号： H01J37/3426 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3423 ,  H01J37/3435

摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al inter-layer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和衬板之间的Al层间。 该组件的粘合强度超过50MPa。