公开(公告)号：US07256872B2

公开(公告)日：2007-08-14

申请号：US10759641

申请日：2004-01-16

申请人： Han-Ming Wu ,  Ronald J. Kuse

发明人： Han-Ming Wu ,  Ronald J. Kuse

IPC分类号： G03B27/32 ,  G03B27/52 ,  G03B27/42

CPC分类号： G03F7/70933 ,  G03F1/64 ,  G03F7/70866 ,  G03F7/70983

摘要： A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the chamber and removing the initial gas from the chamber. Adding and removing may be accomplished by using pressure, diffusion, vacuum, or other means.

摘要翻译： 描述了一种方法和装置，用于从掩模保护装置（例如防护薄膜组件）和图案化掩模（例如掩模版）之间的气体填充外壳中除去初始气体，并加入具有不同组成的吹扫气体。 气体充填的外壳包括用于将吹扫气体添加到室中并从室中去除初始气体的排气口。 添加和去除可以通过使用压力，扩散，真空或其他方式来实现。

公开(公告)号：US06710845B2

公开(公告)日：2004-03-23

申请号：US09752938

申请日：2000-12-29

申请人： Han-Ming Wu ,  Ronald J. Kuse

发明人： Han-Ming Wu ,  Ronald J. Kuse

IPC分类号： G03B2752

CPC分类号： G03F7/70933 ,  G03F1/64 ,  G03F7/70866 ,  G03F7/70983

摘要： A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the enclosure and removing the initial gas from the enclosure. Adding and removing may be accomplished by using pressure, diffusion, or vacuum.

摘要翻译： 描述了一种方法和装置，用于从掩模保护装置（例如防护薄膜组件）和图案化掩模（例如掩模版）之间的气体填充外壳中除去初始气体，并加入具有不同组成的吹扫气体。 充气的外壳包括用于将净化气体添加到外壳并从外壳去除初始气体的通风口。 添加和去除可以通过使用压力，扩散或真空来实现。

公开(公告)号：US20060121700A1

公开(公告)日：2006-06-08

申请号：US11005193

申请日：2004-12-06

申请人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

发明人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC分类号： H01L21/84 ,  H01L21/20

CPC分类号： H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

摘要翻译： 在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓 并进行快速热退火处理。 光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。 快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

公开(公告)号：US20060014368A1

公开(公告)日：2006-01-19

申请号：US10892180

申请日：2004-07-16

申请人： Lung-Han Peng ,  Han-Ming Wu ,  Sung-Li Wang ,  Chia-Wei Chang ,  Chin-Yi Lin

发明人： Lung-Han Peng ,  Han-Ming Wu ,  Sung-Li Wang ,  Chia-Wei Chang ,  Chin-Yi Lin

IPC分类号： H01L21/28

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

摘要翻译： 一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结 扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。 因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。

公开(公告)号：US07977254B2

公开(公告)日：2011-07-12

申请号：US12931361

申请日：2007-06-27

申请人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

发明人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC分类号： H01L21/31

CPC分类号： H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

摘要翻译： 在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓 并进行快速热退火处理。 光辅助电化学方法使用包含缓冲CH 3 COOH的电解质浴，pH在约5.5和7.5之间。 快速热退火过程在氧气环境中在约500℃至800℃之间的温度下进行。

公开(公告)号：US06737358B2

公开(公告)日：2004-05-18

申请号：US10076129

申请日：2002-02-13

申请人： Y. Long He ,  Albert Kwok ,  Tsukasa Abe ,  Han-Ming Wu

发明人： Y. Long He ,  Albert Kwok ,  Tsukasa Abe ,  Han-Ming Wu

IPC分类号： H01L21302

CPC分类号： H01J37/32009 ,  H01J2237/334 ,  H01L21/3065

摘要： Plasma etching is controlled utilizing two etchant gases to form a plasma so as to obtain controlled (e.g., uniform) etch rate across a wafer. One etchant gas forms a positive plasma, which is the dominant plasma. The other etchant gas forms a negative plasma, which is the secondary plasma. The ratio of dominant plasma to the secondary plasma can be adjusted such that ion densities are uniform across the wafer, resulting in uniform etch rate over the wafer.

摘要翻译： 使用两种蚀刻剂气体来控制等离子体蚀刻以形成等离子体，以便获得跨晶片的受控（例如，均匀的）蚀刻速率。 一个蚀刻剂气体形成一个正等离子体，这是主要的等离子体。 其他蚀刻剂气体形成负等离子体，其为次级等离子体。 可以调整主要等离子体与次级等离子体的比例，使得离子密度在晶片上是均匀的，从而在晶片上产生均匀的蚀刻速率。

公开(公告)号：US07253061B2

公开(公告)日：2007-08-07

申请号：US11005193

申请日：2004-12-06

申请人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

发明人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC分类号： H01L21/336

CPC分类号： H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

摘要翻译： 在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓 并进行快速热退火处理。 光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。 快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

公开(公告)号：US20050139317A1

公开(公告)日：2005-06-30

申请号：US10980909

申请日：2004-11-03

申请人： Han-Ming Wu ,  He Long

发明人： Han-Ming Wu ,  He Long

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32623 ,  C23C16/45591 ,  C23C16/507

摘要： An apparatus comprising a plasma chamber containing a plasma for a plasma-assisted material process upon a substrate; a shielding plate within the plasma chamber to actively direct ion flux to desired areas of the substrate; and a supporting structure to support the shielding plate within the chamber is disclosed.

摘要翻译： 一种包括等离子体室的装置，其包含用于在衬底上等离子体辅助材料工艺的等离子体; 等离子体室内的屏蔽板，以将离子通量主动地引导到衬底的所需区域; 并且公开了用于支撑室内的屏蔽板的支撑结构。

公开(公告)号：US07223448B2

公开(公告)日：2007-05-29

申请号：US10396990

申请日：2003-03-24

申请人： Han-Ming Wu ,  He Long

发明人： Han-Ming Wu ,  He Long

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32623 ,  C23C16/45591 ,  C23C16/507

摘要： A method for providing uniformity in plasma-assisted material processes. A shielding plate is implemented within a plasma chamber above a substrate. The dimensions, geometry, and location of the shielding plate are optimized to generate a desired ion flux in a plasma-assisted material process conducted in a plasma chamber.

摘要翻译： 一种提供等离子体辅助材料工艺均匀性的方法。 在衬底上方的等离子体室内实现屏蔽板。 屏蔽板的尺寸，几何形状和位置被优化以在等离子体辅助材料工艺中在等离子体室中产生期望的离子通量。

公开(公告)号：US06793717B2

公开(公告)日：2004-09-21

申请号：US10460102

申请日：2003-06-11

申请人： Han-Ming Wu ,  Giang Dao

发明人： Han-Ming Wu ,  Giang Dao

IPC分类号： B03C380

CPC分类号： B03C3/32 ,  B01D46/0067 ,  B01D46/10 ,  B01D46/50 ,  B01D46/521 ,  B01D51/10 ,  B01D53/00 ,  Y10S438/905 ,  Y10S438/906

摘要： The present invention includes a filtered mask enclosure having an exterior portion and interior regions within the exterior portion such that the interior regions have a filtering region and a purging region connected to the filtering region. The present invention further includes a method of removing a first contaminant in a gas phase, a second contaminant in a solid phase, and a third contaminant having an electrical charge from a purge gas and flowing the purge gas through a vicinity of a mask while exposing a wafer with light through the mask.

摘要翻译： 本发明包括具有在外部部分内的外部部分和内部区域的过滤的掩模外壳，使得内部区域具有连接到过滤区域的过滤区域和清洗区域。 本发明还包括一种除去气相中的第一污染物，固相中的第二污染物和具有来自吹扫气体的电荷的第三污染物并且使清洗气体通过掩模附近而流过的同时曝光 具有通过掩模的光的晶片。