公开(公告)号：US20160233894A1

公开(公告)日：2016-08-11

申请号：US15132143

申请日：2016-04-18

申请人： HGST Technologies Santa Ana, Inc.

发明人： Majid NEMATI ANARAKI ,  Xinde HU ,  Richard David BARNDT

IPC分类号： H03M13/45 ,  H03M13/00 ,  H03M13/11

CPC分类号： H03M13/1105 ,  H03M13/05 ,  H03M13/1111 ,  H03M13/1122 ,  H03M13/1128 ,  H03M13/114 ,  H03M13/1162 ,  H03M13/1171 ,  H03M13/255 ,  H03M13/458 ,  H03M13/615 ,  H03M13/6505

摘要： Decoding logic is provided that is operational upon a data buffer to represent a plurality of variable nodes and a plurality of check nodes. For a respective one of the variable nodes, a vector component is selected from a confidence vector associated with the variable node. Using a respective one of the check nodes, a check node return value is calculated based on one or more other vector components from one or more other vectors and one or more vector indices corresponding to the one or more other vector components. The confidence vector is then updated based on the check node return value and an index for the check node return value, and a current state of a memory cell associated with the respective one of the variable nodes is determined based on a location of a primary one of multiple vector components within the updated confidence vector.

公开(公告)号：US20150364202A1

公开(公告)日：2015-12-17

申请号：US14834410

申请日：2015-08-24

申请人： HGST TECHNOLOGIES SANTA ANA, INC.

发明人： Seyhan KARAKULAK ,  Majid NEMATI ANARAKI ,  Anthony Dwayne WEATHERS ,  Richard David BARNDT

IPC分类号： G11C16/28 ,  G11C16/08 ,  G11C16/10

CPC分类号： G11C16/28 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C2211/5634

摘要： Aspects of the subject technology relate to a method for reading information stored in a flash memory device. In some implementations, the method can include steps including, obtaining a first read signal of a first cell, wherein the first cell is located in a first word line and in a first bit line in the flash memory device, obtaining a programming level of a second cell, wherein the second cell is located in a second word line and in the first bit line, and wherein the second word line is adjacent to the first word line. In certain aspects, the method may further comprise steps for obtaining decoding information for the first cell based on the programming level of the second cell, wherein the decoding information is derived from a first set of reference voltage distributions corresponding to the obtained programming level of the second cell. A data storage system and a non-transitory machine readable storage medium are also provided.

摘要翻译： 主题技术的方面涉及用于读取存储在闪速存储装置中的信息的方法。 在一些实施方式中，该方法可以包括以下步骤：获得第一小区的第一读取信号，其中第一小区位于闪存设备中的第一字线和第一位线中，获得编程级别 第二单元，其中第二单元位于第二字线和第一位线中，并且其中第二字线与第一字线相邻。 在某些方面，该方法还可以包括基于第二小区的编程级获得第一小区的解码信息的步骤，其中解码信息是从对应于所获得的编程级别的第一组参考电压分布导出的 第二个细胞。 还提供了数据存储系统和非暂时机器可读存储介质。