公开(公告)号：US11227994B2

公开(公告)日：2022-01-18

申请号：US16669391

申请日：2019-10-30

Applicant: HEFEI RELIANCE MEMORY LIMITED

Inventor： Zhiqiang Wei ,  Zhichao Lu

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: A non-volatile memory cell includes a bottom electrode, a top electrode having a conductive material, a resistive layer interposed between the bottom electrode and the top electrode, and side portions covering sides of the top electrode and the resistive layer. The side portions contain an oxide of the conductive material. The non-volatile memory cell further includes a contact wire disposed on the top electrode. A width of the contact wire is less than a width between lateral outer surfaces of the side portions.

公开(公告)号：US11950519B2

公开(公告)日：2024-04-02

申请号：US17540486

申请日：2021-12-02

Applicant: HEFEI RELIANCE MEMORY LIMITED

Inventor： Zhiqiang Wei ,  Zhichao Lu

IPC: H10N70/00 ,  G11C13/00 ,  H10B63/00 ,  H10N70/20

CPC classification number: H10N70/253 ,  G11C13/0002 ,  H10B63/30 ,  H10N70/011 ,  H10N70/061 ,  H10N70/8265 ,  H10N70/841 ,  H10N70/883

Abstract: A non-volatile memory cell includes a bottom electrode, a top electrode having a conductive material, a resistive layer interposed between the bottom electrode and the top electrode, and side portions covering sides of the top electrode and the resistive layer. The side portions contain an oxide of the conductive material. The non-volatile memory cell further includes a contact wire disposed on the top electrode. A width of the contact wire is less than a width between lateral outer surfaces of the side portions.