公开(公告)号：US20200041336A1

公开(公告)日：2020-02-06

申请号：US16594706

申请日：2019-10-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masatoshi ISHIHARA ,  Hiroo YAMAMOTO ,  Yoshiaki OHSHIGE

IPC: G01J1/04 ,  H01L27/14 ,  G01J5/06 ,  G01J1/02 ,  G01J1/42 ,  H01L27/144 ,  H04N5/225

Abstract: The signal processing board includes a plurality of signal processing circuits configured to process signals output from a plurality of pixels of an infrared detecting element. The signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board. The signal processing board includes a plurality of insulating layers that are stacked on a surface side opposing the semiconductor substrate. A plurality of signal processing circuits are placed in the circuit placement area. A heat-conducting layer is placed to be positioned on at least one of the insulating layers and in the element placement area, in the signal processing board. The heat-conducting layer has a heat conductivity that is higher than a heat conductivity of the insulating layers.

公开(公告)号：US20230420595A1

公开(公告)日：2023-12-28

申请号：US18039502

申请日：2021-11-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Keiki TAGUCHI ,  Hajime ISHIHARA ,  Yoshiaki OHSHIGE ,  Kenji MAKINO

IPC: H01L31/102 ,  H01L31/0224 ,  H01L31/0304

CPC classification number: H01L31/102 ,  H01L31/022408 ,  H01L31/03042

Abstract: A semiconductor light receiving element includes: a substrate; a semiconductor stacked portion that is formed on a first region of the substrate; and a first electrode and a second electrode that are electrically connected to the semiconductor stacked portion. Te semiconductor stacked portion includes: a light absorption layer of a first conductivity type including InxGa1-xAs; and a second region of a second conductivity type other than the first conductivity type that is located on the opposite side to the substrate with respect to the light absorption layer and bonded to the light absorption layer. The first electrode is connected to a first portion of the first conductivity type located on the substrate side with respect to the light absorption layer in the semiconductor stacked portion.

公开(公告)号：US20180238733A1

公开(公告)日：2018-08-23

申请号：US15550127

申请日：2015-11-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masatoshi ISHIHARA ,  Hiroo YAMAMOTO ,  Yoshiaki OHSHIGE

IPC: G01J1/04 ,  H01L27/144 ,  H04N5/225

Abstract: The signal processing board includes a plurality of signal processing circuits configured to process signals output from a plurality of pixels of an infrared detecting element. The signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board. The signal processing board includes a plurality of insulating layers that are stacked on a surface side opposing the semiconductor substrate. A plurality of signal processing circuits are placed in the circuit placement area. A heat-conducting layer is placed to be positioned on at least one of the insulating layers and in the element placement area, in the signal processing board. The heat-conducting layer has a heat conductivity that is higher than a heat conductivity of the insulating layers.