公开(公告)号：US20200168656A1

公开(公告)日：2020-05-28

申请号：US16777291

申请日：2020-01-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Keiki TAGUCHI ,  Hajime ISHIHARA ,  Hiroo YAMAMOTO ,  Akihiro SHIMADA

IPC: H01L27/146 ,  G01J1/44 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/02 ,  H01L31/0216

Abstract: A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

公开(公告)号：US20230420595A1

公开(公告)日：2023-12-28

申请号：US18039502

申请日：2021-11-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Keiki TAGUCHI ,  Hajime ISHIHARA ,  Yoshiaki OHSHIGE ,  Kenji MAKINO

IPC: H01L31/102 ,  H01L31/0224 ,  H01L31/0304

CPC classification number: H01L31/102 ,  H01L31/022408 ,  H01L31/03042

Abstract: A semiconductor light receiving element includes: a substrate; a semiconductor stacked portion that is formed on a first region of the substrate; and a first electrode and a second electrode that are electrically connected to the semiconductor stacked portion. Te semiconductor stacked portion includes: a light absorption layer of a first conductivity type including InxGa1-xAs; and a second region of a second conductivity type other than the first conductivity type that is located on the opposite side to the substrate with respect to the light absorption layer and bonded to the light absorption layer. The first electrode is connected to a first portion of the first conductivity type located on the substrate side with respect to the light absorption layer in the semiconductor stacked portion.

公开(公告)号：US20210318417A1

公开(公告)日：2021-10-14

申请号：US16846823

申请日：2020-04-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Keiki TAGUCHI ,  Hajime ISHIHARA ,  Hiroo YAMAMOTO ,  Akihiro SHIMADA

IPC: G01S7/4863 ,  G01S17/10

Abstract: A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.