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公开(公告)号:US12209996B2
公开(公告)日:2025-01-28
申请号:US17430904
申请日:2020-01-28
Applicant: National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY , HAMAMATSU PHOTONICS K.K.
Inventor: Naohiro Hozumi , Takuto Matsui , Toru Matsumoto , Shigeru Eura
IPC: G01N29/34 , G01N29/04 , G01N29/26 , G01N29/265 , G01N29/44 , G01R31/265 , G01R31/27 , G01R31/70
Abstract: An ultrasonic testing device having a packaged semiconductor device as a testing target, the device including: an ultrasonic oscillator disposed to face the semiconductor device; a pulse generator generating a driving signal that is used in the generation of an ultrasonic wave to be output from the ultrasonic oscillator; and an analysis unit analyzing an output signal that is output from the semiconductor device in accordance with the irradiation of the ultrasonic wave from the ultrasonic oscillator, in which the pulse generator sets an optimal frequency of the driving signal such that the absorption of the ultrasonic wave in the semiconductor device is maximized.
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公开(公告)号:US11125698B2
公开(公告)日:2021-09-21
申请号:US16618862
申请日:2018-05-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Toru Matsumoto , Kazushige Koshikawa
IPC: G01N21/956 , G06T7/00
Abstract: Provided is a method for inspecting a semiconductor device which performs an inspection of a semiconductor device as an object to be inspected, including attaching an adhesive tape to a surface to be inspected of the semiconductor device, acquiring a first pattern image based on a light detected from a region including a surface of the surface to be inspected to which the adhesive tape is attached, inputting an electrical signal to the semiconductor device to which the adhesive tape is attached, acquiring a first heat generation image by detecting light according to heat radiation from the region including the surface to which the adhesive tape is attached in a state in which the electrical signal is input, and superimposing the first pattern image and the first heat generation image.
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公开(公告)号:US11105777B2
公开(公告)日:2021-08-31
申请号:US16346919
申请日:2017-09-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Toru Matsumoto
IPC: G01N29/265 , G01N29/28 , G01N29/44 , G01R31/26 , G01R31/28
Abstract: This ultrasonic inspection device, for inspecting a packaged semiconductor device, is provided with: an ultrasonic transducer which outputs ultrasonic waves to a semiconductor device; a receiver (a reflection detection unit) which detects reflected waves of the ultrasonic waves reflected on the semiconductor device; a stage which moves the positions of the semiconductor device relative to the ultrasonic transducer; a stage control unit which controls driving of the stage; and an analysis unit which analyzes the reaction of the semiconductor device to the input of the ultrasonic waves from the ultrasonic transducer. The stage control unit controls the distance between the semiconductor device and the ultrasonic transducer on the basis of a peak occurring in time waveform of the reflected wave detected by the receiver.
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公开(公告)号:US11428673B2
公开(公告)日:2022-08-30
申请号:US16346585
申请日:2017-09-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Toru Matsumoto
IPC: G01N29/28 , G01R31/26 , G01R31/317 , G06T7/00 , G01R31/28 , G01N29/27 , G01N29/22 , G01N29/11 , G01N29/265
Abstract: Provided is an ultrasonic inspection device for inspecting a packaged semiconductor device, The ultrasonic inspection device including an ultrasonic transducer that is disposed to face the semiconductor device; a medium holding unit that is provided at an end of the ultrasonic transducer facing the semiconductor device and holds a medium through which ultrasonic waves are propagated; a stage that moves the position of the semiconductor device relative to the ultrasonic transducer; and an analysis unit that analyzes the reaction of the semiconductor device in accordance with input of the ultrasonic waves from the ultrasonic transducer.
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公开(公告)号:US11156565B2
公开(公告)日:2021-10-26
申请号:US16618862
申请日:2018-05-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Toru Matsumoto , Kazushige Koshikawa
IPC: G01N21/956 , G06T7/00
Abstract: Provided is a method for inspecting a semiconductor device which performs an inspection of a semiconductor device as an object to be inspected, including attaching an adhesive tape to a surface to be inspected of the semiconductor device, acquiring a first pattern image based on a light detected from a region including a surface of the surface to be inspected to which the adhesive tape is attached, inputting an electrical signal to the semiconductor device to which the adhesive tape is attached, acquiring a first heat generation image by detecting light according to heat radiation from the region including the surface to which the adhesive tape is attached in a state in which the electrical signal is input, and superimposing the first pattern image and the first heat generation image.
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公开(公告)号:US11460497B2
公开(公告)日:2022-10-04
申请号:US16624008
申请日:2018-04-18
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Toru Matsumoto , Koichi Endo , Tomonori Nakamura , Kazushige Koshikawa
IPC: G01R31/26
Abstract: A device analysis apparatus is a device analysis apparatus for determining a quality of a power semiconductor device, including an application unit that applies a voltage signal to the power semiconductor device, a light detection unit that detects light from the power semiconductor device at a plurality of detection positions and outputs detection signals based on detection results, and a determination unit that determines the quality of the power semiconductor device based on temporal changes of the detection signals.
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公开(公告)号:US10955458B2
公开(公告)日:2021-03-23
申请号:US16346594
申请日:2017-09-20
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Toru Matsumoto , Akira Shimase
IPC: G01R31/265 , G01R31/26 , G01R31/302
Abstract: A semiconductor device inspection apparatus is an apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus including: an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves; a stage for moving a relative position of the semiconductor device and the ultrasonic transducer; a stimulation condition control unit for controlling a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and an analysis unit for generating a measurement image based on the result signal which is output from the semiconductor device.
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