公开(公告)号：US11480783B2

公开(公告)日：2022-10-25

申请号：US16621919

申请日：2018-06-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Helmut Teichmann ,  Andreas Durandi ,  Peter Seitz ,  Takashi Kasahara ,  Katsumi Shibayama

IPC: G02B26/00

Abstract: An optical filter system includes a Fabry-Perot interference filter, and a controller that controls the Fabry-Perot interference filter. The Fabry-Perot interference filter includes a first mirror portion, a second mirror portion, a first driving electrode and a first monitor electrode provided with the first mirror portion, and a second driving electrode and a second monitor electrode provided with the second mirror portion. The controller includes a control unit that calculates an electrostatic capacitance between the first mirror portion and the second mirror portion based on an alternating voltage generated between the first monitor electrode and the second monitor electrode while an alternating current is applied between the first monitor electrode and the second monitor electrode.

公开(公告)号：US12259275B2

公开(公告)日：2025-03-25

申请号：US17294051

申请日：2019-09-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Peter Seitz ,  Helmut Teichmann ,  Katsumi Shibayama ,  Takashi Kasahara

IPC: G02B5/28 ,  G01J3/26 ,  G02B26/00

Abstract: Provided is a control device for controlling a Fabry-Perot interference filter having a pair of mirror parts and a pair of driving electrodes. The control device includes: a first driving source that is controlled by using a current as a control parameter, and changes the distance between the pair of mirror parts; a second driving source that is controlled by using a voltage as a control parameter, and changes the distance; and a control unit that controls the first driving source and the second driving source in such a way that the distance is changed by a first driving source in a first region and the distance is changed by the second driving source in at least one part of an region other than the first region when an region including a maximum of the voltage is defined as the first region.

公开(公告)号：US10032951B2

公开(公告)日：2018-07-24

申请号：US14432886

申请日：2014-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Peter Seitz

IPC: G01J5/20 ,  H01L31/113 ,  H01L31/02 ,  H01L31/103 ,  H01L27/146 ,  G01J5/24 ,  G01J1/46

CPC classification number: H01L31/1136 ,  G01J1/46 ,  G01J5/24 ,  H01L27/14649 ,  H01L31/02019 ,  H01L31/103 ,  H01L31/1037

Abstract: A photosensor for the detection of infrared radiation in the wavelength range of 1 to 1000 micrometers consists of a semiconductor substrate with a highly doped interaction volume for the incoming radiation. At the edge of this highly doped region, an extended gate electrode is placed consisting of a conducting material on top of an insulating layer. On the other side of the gate electrode, another highly doped semiconductor region is placed, acting as a charge collector. Through free carrier absorption in the interaction volume, incoming photons impart their energy on mobile charge carriers. In the case of free electrons, the gate electrode is biased slightly below the reset voltage of the interaction volume, so that the electrons carrying the additional energy of the absorbed photons can predominantly make the transition from the interaction volume across the gate electrode area to the charge collector volume.

公开(公告)号：US20150280047A1

公开(公告)日：2015-10-01

申请号：US14432886

申请日：2014-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Peter Seitz

IPC: H01L31/113 ,  G01J5/24 ,  H01L27/146

CPC classification number: H01L31/1136 ,  G01J1/46 ,  G01J5/24 ,  H01L27/14649 ,  H01L31/02019 ,  H01L31/103 ,  H01L31/1037

Abstract: A photosensor for the detection of infrared radiation in the wavelength range of 1 to 1000 micrometers consists of a semiconductor substrate with a highly doped interaction volume for the incoming radiation. At the edge of this highly doped region, an extended gate electrode is placed consisting of a conducting material on top of an insulating layer. On the other side of the gate electrode, another highly doped semiconductor region is placed, acting as a charge collector. Through free carrier absorption in the interaction volume, incoming photons impart their energy on mobile charge carriers. In the case of free electrons, the gate electrode is biased slightly below the reset voltage of the interaction volume, so that the electrons carrying the additional energy of the absorbed photons can predominantly make the transition from the interaction volume across the gate electrode area to the charge collector volume.

Abstract translation: 用于检测1至1000微米波长范围内的红外辐射的光电传感器由具有用于入射辐射的高掺杂相互作用体积的半导体衬底组成。 在该高掺杂区域的边缘处，由绝缘层顶部的导电材料放置延伸的栅电极。 在栅电极的另一侧，放置另一个高掺杂半导体区域，充当电荷收集器。 通过相互作用体积中的自由载体吸收，入射光子将其能量赋予移动电荷载体。 在自由电子的情况下，栅电极被稍微偏置在相互作用体积的复位电压之下，使得携带吸收的光子的附加能量的电子可以主要地从跨越栅极电极区域的相互作用体积向 电荷收集器体积。

公开(公告)号：US10921448B2

公开(公告)日：2021-02-16

申请号：US15760253

申请日：2015-09-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Peter Seitz ,  Alexandru Rusu

IPC: G01C3/08 ,  G01S17/08 ,  G01B11/27 ,  G01C15/00 ,  G01S17/48

Abstract: An optical system for measuring a distance to an object furnished with a plane mirror is disclosed. The optical distance measuring system includes a coherent light source projecting a laser beam, optical elements, and a one-dimensional photosensor. The optical elements split the laser beam into two laser beams and spread out the laser beam into a sheet of light whose orientation is perpendicular to a plane created by the propagation directions of the laser beams. The laser beams are reflected by the mirror and back to the photosensor. The photosensor detects incident light intensity distribution of the reflected laser beams with two local maxima, whose position can be employed to calculate the distance of the mirror and its momentary tilt angle.